TOT - 4301
Abstract: SOT 23 marking code a6 diode A6 SOD-323 MARK MINI-MELF DIODE marking 3
Text: 1N4148W, 1N4148WS SMALL SIGNAL DIODES .022 0.55 SOD-123 (1N4148W) .112 (2.85) .100 (2.55) ¨ This diode is also available in other case styles including: the DO-35 case with the type designation 1N4148, the Mini-MELF case with the type designation LL4148, and
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1N4148W,
1N4148WS
OD-123
1N4148W)
DO-35
1N4148,
LL4148,
OT-23
IMBD4148.
1N4148W
TOT - 4301
SOT 23 marking code a6 diode
A6 SOD-323 MARK
MINI-MELF DIODE marking 3
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Untitled
Abstract: No abstract text available
Text: SiC SCHOTTKY DIODE SML05SC06D3A / SML05SC06D3B • VR max = 600V • IF(avg) = 5A • VF(typ) = 1.5V • DLCC3 Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B”/ “E-MELF” Package † No Reverse Recovery No Forward Recovery
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SML05SC06D3A
SML05SC06D3B
SML05SC06D3B
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Untitled
Abstract: No abstract text available
Text: SiC SCHOTTKY DIODE SML05SC06D3A / SML05SC06D3B • VR max = 600V • IF(avg) = 5A • VF(typ) = 1.5V • DLCC3 Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B”/ “E-MELF” Package † No Reverse Recovery No Forward Recovery
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SML05SC06D3A
SML05SC06D3B
SML05SC06D3B
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smd diode marking T4
Abstract: diode marking T4 sod123
Text: SMD Switching Diode CDSW4148-G High Speed RoHS Device SOD-123 Features -Fast Switching Speed 0.110 2.80 -Electrically Identical to Standard JEDEC 0.102 (2.60) -High Conductance -Surface Mount Package Ideally Suited for Automatic Insertion -Flat Package SOD-123 in Stead mini-MELF
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CDSW4148-G
OD-123
OD-123
OD-123,
MIL-STD-202,
QW-B0017
smd diode marking T4
diode marking T4 sod123
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Untitled
Abstract: No abstract text available
Text: SMD Switching Diode CDSW4148-G High Speed RoHS Device SOD-123 Features 0.152 3.85 0.140(3.55) - Fast Switching Speed - Electrically Identical to Standard JEDEC - High Conductance - Surface Mount Package Ideally Suited for Automatic Insertion - Flat Package SOD-123 in Stead mini-MELF Package
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CDSW4148-G
OD-123
OD-123
OD-123,
MIL-STD-202,
QW-B0017
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Untitled
Abstract: No abstract text available
Text: SMD Switching Diode ACDSW4148-G High Speed RoHS Device Features SOD-123 - Fast Switching Speed - Electrically Identical to Standard JEDEC - High Conductance - Surface Mount Package Ideally Suited for Automatic Insertion - Flat Package SOD-123 in Stead mini-MELF Package
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ACDSW4148-G
OD-123
OD-123
AEC-Q101
OD-123,
MIL-STD-202,
AQW-B0001
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LE17
Abstract: MIL-PRF19500 QR217 1N5806-DLCC2 1n5806d
Text: ULTRAFAST RECOVERY RECTIFIER DIODE 1N5806DLCC2 • Hermetic Ceramic Package Designed as a DropIn Replacement for D-5A MELF Package • Designed For High Reliability Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS Tamb = 25°C unless otherwise stated
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1N5806DLCC2
1N5806D2B-JQRS
LE17
MIL-PRF19500
QR217
1N5806-DLCC2
1n5806d
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DIODE marking 5ba
Abstract: No abstract text available
Text: POWER RECTIFIER DIODE 1N5550D3A / 1N5550D3B • VBR = 220V, IF = 5A, Standard Reverse Recovery Rectifier Diode • Light Weight Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B” / “E-MELF” Package† • Switching Power Supply Applications
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1N5550D3A
1N5550D3B
1N5550D3B-JQRS
DIODE marking 5ba
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SEMELAB
Abstract: LE17 MIL-PRF19500 QR217 1n6640
Text: SILICON EPITAXIAL PLANAR DIODE 1N6640D2A / 1N6640D2B • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”A-MELF” Package. Suitable for general purpose, switching applications.
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1N6640D2A
1N6640D2B
1N6640D2A-JQRS
SEMELAB
LE17
MIL-PRF19500
QR217
1n6640
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR DIODE 1N6640D2A / 1N6640D2B • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”A-MELF” Package. Suitable for general purpose, switching applications.
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1N6640D2A
1N6640D2B
1N6640D2A-JQRS
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1N6642 radiation
Abstract: 1n6642d2a LE17 MIL-PRF19500 QR217 melf diode D-5A
Text: SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications.
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1N6642D2A
1N6642D2B
300mA
1N6642D2A-JQRS
1N6642 radiation
LE17
MIL-PRF19500
QR217
melf diode D-5A
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LE17
Abstract: MIL-PRF19500 QR217
Text: 500mW ZENER DIODE 1N6328D2A / 1N6328D2B • • • Standard ±5% Zener Voltage Tolerance DLCC2 Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/ “B-MELF” Package Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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500mW
1N6328D2A
1N6328D2B
500mW
1N6328D2A-JQRS
LE17
MIL-PRF19500
QR217
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D-5B layout
Abstract: LE17 MIL-PRF19500 QR217 8814 "Power rectifier Diode"
Text: POWER RECTIFIER DIODE 1N5550D3A / 1N5550D3B • VBR = 220V, IF = 5A, Standard Reverse Recovery Rectifier Diode • Light Weight Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B” / “E-MELF” Package† • Switching Power Supply Applications
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1N5550D3A
1N5550D3B
1N5550D3B-JQRS
D-5B layout
LE17
MIL-PRF19500
QR217
8814
"Power rectifier Diode"
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D-5B layout
Abstract: MELF pad layout D5B type diode QR217 1N4954US 1N5811US LE17 MIL-PRF19500 melf diode marking 1N5811D3B-JQRS
Text: DIODE LEADLESS CHIP CARRIER DLCC3 • Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “MELF-5.7 D-5B ” / “E-MELF” packages† • Designed For High Reliability Military, Aerospace and Space Applications
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150mg
63Sn/37Pb
160mg
1N5811US
539mg
1N4954US
540mg
1N5811D3B-JQRS
D-5B layout
MELF pad layout
D5B type diode
QR217
1N4954US
1N5811US
LE17
MIL-PRF19500
melf diode marking
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Untitled
Abstract: No abstract text available
Text: 500mW SILICON ZENER DIODE REGULATOR 1N5245BD2A, 1N5245BD2B • • • • • VZ = 15V Standard Voltage of ±5% B suffix Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”A-MELF” Package. Regulation Over a Large Operating Current & Temperature Range
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500mW
1N5245BD2A,
1N5245BD2B
200mA
1N5245BD2A-JQRS
1N5245-A
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B 1N6642D2C / 1N6642D2D • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications.
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1N6642D2A
1N6642D2B
1N6642D2C
1N6642D2D
63Sn/37Pb)
300mA
1N6642D2D-JQRS
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Untitled
Abstract: No abstract text available
Text: 500mW ZENER DIODE 1N6328D2A / 1N6328D2B • • • Standard ±5% Zener Voltage Tolerance DLCC2 Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/ “A-MELF” Package Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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500mW
1N6328D2A
1N6328D2B
76mm2)
1N6328D2A-JQRS
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melf diode D-5A
Abstract: melf diode marking MELF pad layout marking diode D2B gold melf QR217 1N4460US 1N5806US 1N5819 LE17
Text: DIODE LEADLESS CHIP CARRIER DLCC2 • Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “MELF-5.1 D-5A ” / “A-MELF” packages† • Designed For High Reliability Military, Aerospace and Space Applications
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63Sn/37Pb
100mg
1N5806US
193mg
1N4460US
1N5819D2A-JQRS
melf diode D-5A
melf diode marking
MELF pad layout
marking diode D2B
gold melf
QR217
1N4460US
1N5806US
1N5819
LE17
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1N5806 d-5a
Abstract: 1N5806D2A LE17 MIL-PRF19500 QR217 1N5806D2B-JQRS
Text: ULTRAFAST RECOVERY RECTIFIER DIODE 1N5806D2A / 1N5806D2B • Hermetic Ceramic Package Designed as a DropIn Replacement for D-5A MELF Package • Designed For High Rel Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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1N5806D2A
1N5806D2B
1N5806D2B-JQRS
1N5806 d-5a
LE17
MIL-PRF19500
QR217
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B 1N6642D2C / 1N6642D2D • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications.
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1N6642D2A
1N6642D2B
1N6642D2C
1N6642D2D
63Sn/37Pb)
300mA
1N6642D2D-JQRS
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY RECTIFIER DIODE 1N5819D2A / 1N5819D2B • • • • • • High Surge Capability Extremely Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5A” / “B-MELF” Package† For Use in Low Voltage, High Frequency Inverters,
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1N5819D2A
1N5819D2B
1N5819D2A-JQRS
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1N6642D2A
Abstract: LE17 MIL-PRF19500 QR217 1N6642 radiation
Text: SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. † Suitable for general purpose, switching applications.
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1N6642D2A
1N6642D2B
1N6642D2A-JQRS
LE17
MIL-PRF19500
QR217
1N6642 radiation
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1N5819DLCC2
Abstract: B-MELF
Text: SCHOTTKY RECTIFIER DIODE 1N5819DLCC2 • • • • • • High Surge Capability Extremely Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5A” / “B-MELF” Package† For Use in Low Voltage, High Frequency Inverters,
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1N5819DLCC2
1N5819D2A-JQRS
1N5819DLCC2
B-MELF
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"Power rectifier Diode"
Abstract: power rectifier diode D-5B layout LE17 MIL-PRF19500 QR217 1N5551D3A 1n5551d3
Text: POWER RECTIFIER DIODE 1N5551D3A / 1N5551D3B • VBR = 440V, IF = 5A, Standard Reverse Recovery Rectifier Diode • Light Weight Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B” / “E-MELF” Package† • Switching Power Supply Applications
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1N5551D3A
1N5551D3B
1N5551D3B-JQRS
"Power rectifier Diode"
power rectifier diode
D-5B layout
LE17
MIL-PRF19500
QR217
1n5551d3
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