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    1.2 MICRON CMOS Search Results

    1.2 MICRON CMOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    MG80C186XL-20/R Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy
    MD87C51-16/B Rochester Electronics LLC Microcontroller, CMOS Visit Rochester Electronics LLC Buy
    A80C286-12 Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy

    1.2 MICRON CMOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1.2 Micron CMOS Process Family

    Abstract: 1.2 micron cmos P-MOSFET metal oxide in capacitor vertical PNP metal resistor 0.8 Micron CMOS Process Family 0.03 um CMOS technology
    Text: 1.2 Micron CMOS Process Family  June 1995 Features Process Parameters • Double Poly / Double Metal • 2.4 µm Poly and Metal I Pitch • 5.5 Volts Maximum Operating Voltage • Twin-tub • • 1.2µm 5volts Units Metal I pitch width/space 1.4 / 1.0


    Original     		PDF

    CMOS Process Family

    Abstract: 1.5um cmos process family
    Text: 1.5 Micron CMOS Process Family  February 1996 Features Technology Outline • • • • • • • • LOVMOS Processes 2.7~3.6 Volts Low Voltage Option 1.2 Volts Very Low Voltage Option 5.5 Volts Maximum Operating Voltage Double Poly / Double Metal


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    1.2 micron cmos

    Abstract: 1.2 Micron CMOS Process Family 12-micron CMOS Process Family
    Text: 1.2 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters Double Poly / Double Metal 2.4 µm Poly and Metal I Pitch 5.5 Volts Maximum Operating Voltage Twin-tub process ProToDuctionTM Option for prototypes Standard Cell Library


    Original     		PDF

    1.2 Micron CMOS Process Family

    Abstract: No abstract text available
    Text: 1.2 Micron CMOS Process Family Process parameters Features • Double Poly / Double Metal, • 2.4 µm Poly and Metal I Pitch, • 5.5 Volts Maximum Operating Voltage, • Twin-tub process on P-type or N-type wafers, • ProToDuctionTM Option for low cost prototypes,


    Original     		PDF

    ER142503.6V

    Abstract: ER14250-VB3.6V
    Text: CMOS- CSI 1.2 micron Process OPERATING LIFE @ TA = +125C AT RATED VOLTAGE Family Custom Driver Device MCD00002 Lot # 66210891 Package WSOIC Vcc 5.6V Qty 115 Time Point Failures Act Act Act Total Hrs Fails Hrs Fails Hrs Fails Dev. Hrs 168 500 1000 0 115000


    Original     		PDF MCD00002 MIC2202 MIC2202BMM 3A18196 3A10032MNF 3A10034MNE MIC2203 MIC2203BMM ER142503.6V ER14250-VB3.6V

    1.2 Micron CMOS Process Family

    Abstract: FTI-12 P-MOSFET 4800 mosfet mosfet 4800
    Text: 1.2 Micron CMOS Process Family Process parameters Features • Double Poly / Double Metal, • 2.4 µm Poly and Metal I Pitch, • 5.5 Volts Maximum Operating Voltage, • Twin-tub process on P-type or N-type wafers, • ProToDuctionTM Option for low cost prototypes,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ADC-208A ® 8-Bit, 20MSPS CMOS Flash A/D ADC-208 Compatible PRODUCT OVERVIEW The ADC-208A utilizes an advanced VLSI 1.2 micron CMOS in providing 20MHz sampling rates at 8-bits. The flexibility of the design architecture and process delivers latch-up free operation


    Original     		PDF ADC-208A 20MSPS ADC-208 ADC-208A 20MHz 10MHz AD24-pin

    lm324 adc flash converter

    Abstract: HP2811 LM-3241 ADC-208ALC ADC-208ALM ADC-208AMC ADC-208AMM HA-5033 LM324 adc208alm
    Text: ADC-208A ® 8-Bit, 20MSPS CMOS Flash A/D ADC-208 Compatible PRODUCT OVERVIEW The ADC-208A utilizes an advanced VLSI 1.2 micron CMOS in providing 20MHz sampling rates at 8-bits. The flexibility of the design architecture and process delivers latch-up free operation


    Original     		PDF ADC-208A 20MSPS ADC-208 ADC-208A 20MHz ADC-208A. IC-208ALC lm324 adc flash converter HP2811 LM-3241 ADC-208ALC ADC-208ALM ADC-208AMC ADC-208AMM HA-5033 LM324 adc208alm

    vco 27MHz

    Abstract: PLL VCO 27MHz phase sequence detector phone tap
    Text: 0.13um, 12-145 MHz Phase Locke d Loop FEATURES • Industry Standard 0.13 Micron CMOS ■ Digital Logic Process; 1.2/3.3 volts ■ Digital Controlled Output Frequency — up to 145 MHz with a Symmetric Duty Cycle ■ Embedded VCO Frequency Range: 216 MHz, locked to 27


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    lm324 adc flash converter

    Abstract: ADC-208AME
    Text: ADC-208A ® 8-Bit, 20MSPS CMOS Flash A/D ADC-208 Compatible PRODUCT OVERVIEW The ADC-208A utilizes an advanced VLSI 1.2 micron CMOS in providing 20MHz sampling rates at 8-bits. The flexibility of the design architecture and process delivers latch-up free operation


    Original     		PDF ADC-208A 20MSPS ADC-208 ADC-208A 20MHz ADC-208A. 10MHz lm324 adc flash converter ADC-208AME

    Untitled

    Abstract: No abstract text available
    Text: ADC-208A ® 8-Bit, 20MSPS CMOS Flash A/D ADC-208 Compatible PRODUCT OVERVIEW The ADC-208A utilizes an advanced VLSI 1.2 micron CMOS in providing 20MHz sampling rates at 8-bits. The flexibility of the design architecture and process delivers latch-up free operation


    Original     		PDF ADC-208A 20MSPS ADC-208 ADC-208A 20MHz ADC-208A. ADC-208AMM-QL

    hp2811

    Abstract: hp2811 diode LM324 16 PIN DETAILS lm324 adc flash converter adc-208a datel Delay Lines murata ADC-208ALC ADC-208ALM ADC-208AMC ADC-208AMM
    Text: www.murata-ps.com ADC-208A 8-Bit, 20MSPS CMOS Flash A/D ADC-208 Compatible PRODUCT OVERVIEW The ADC-208A utilizes an advanced VLSI 1.2 micron CMOS in providing 20MHz sampling rates at 8-bits. The flexibility of the design architecture and process delivers latch-up free operation


    Original     		PDF ADC-208A 20MSPS ADC-208 ADC-208A 20MHz ADC-208A. hp2811 hp2811 diode LM324 16 PIN DETAILS lm324 adc flash converter adc-208a datel Delay Lines murata ADC-208ALC ADC-208ALM ADC-208AMC ADC-208AMM

    PD65000

    Abstract: 8748 NEC CMOS-5 NEC nec 8748 94Q3 NEC CMOS-4
    Text: SEC CMOS-5 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIM INARY Description The CM O S-5 gate arrays are low -pow er, high-speed integrated circu its fea tu ring 1.2-m icron silicon -ga te CMOS technology. The basic cell on the gate array chip consists o f six transistors, three p-channel and


    OCR Scan     		PDF PD65000 000to NECEL-000837 8748 NEC CMOS-5 NEC nec 8748 94Q3 NEC CMOS-4

    HS-26CT32MS

    Abstract: No abstract text available
    Text: HS-26CT32MS ÊE HÄSKSS Radiation Hardened Quad Differential Line Receiver December 1992 Pinouts Features HS1-26CT32MSR 16 PIN CERAMIC DUAL-IN-LINE CASE OUTLINE 02, CONFIGURATION 3 TOP VIEW • 1.2 Micron Radiation Hardened CMOS • Total DoseUp to 300KRAD SI


    OCR Scan     		PDF HS-26CT32MS HS1-26CT32MSR 300KRAD 1x10s RS-422 138mW 84mils 3290nm) 110nm HS-26CT32MS

    26CT32RH

    Abstract: No abstract text available
    Text: HS-26CT32RH S Radiation Hardened Quad Differential Line Receiver March 1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS -Total Dose Up to 300K RAD Si HS1-26CT32RH 16 LEAD CERAMIC SIDEBRAZE DIP CASE OUTLINE D2, CONFIGURATION C TOP VIEW • Latchup Free


    OCR Scan     		PDF HS-26CT32RH HS1-26CT32RH RS-422 138mW 038mm) 43Q2E71 26CT32RH

    26C31

    Abstract: Harris top marking
    Text: HS-26C31RH Semiconductor Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS 16 Lead Ceramic Dual-in-Line Metal Seal Package SBDIP Mil-Std-1835 CDIP2-T16 TOP VIEW - Total Dose Up to 300K RAD(Si)


    OCR Scan     		PDF HS-26C31RH Mil-Std-1835 CDIP2-T16 1x109 RS-422 05A/cm 110nmx100nm 26C31 Harris top marking

    Untitled

    Abstract: No abstract text available
    Text: HS-26CT31RH S MAfSSf? Radiation Hardened Quad Differential Line Driver March1995 Features Pinouts HS1-26CT31RH 16 LEAD CERAMIC SIDEBRAZE DIP CASE OUTUNE D2, CONFIGURATION C TOP VIEW • 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si • Latchup Free


    OCR Scan     		PDF HS-26CT31RH Mrch1995 HS1-26CT31RH RS-422 038mm)

    inmos static ram

    Abstract: No abstract text available
    Text: IMS1820M CMOS High Performance 64K x 4 Static RAM MIL-STD-883C imos Advance Information / /' / FEATURES DESCRIPTION • INMOS'Very High Speed CMOS • Advanced Process -1.2 Micron Design Rules • 64K x 4 Bit Organization • 30, 35 and 45 ns Address Access Times


    OCR Scan     		PDF IMS1820M MIL-STD-883C 300-mil 64Kx4 inmos static ram

    Untitled

    Abstract: No abstract text available
    Text: IMS1800M CMOS High Performance 256K x 1 Static RAM MIL-STD-883C mos Advance Information DESCRIPTION FEATURES • INMOS' Very High Speed CMOS • Advanced Process -1.2 Micron Design Rules • 256K x 1 Bit Organization • 30, 35 and 45 ns Address Access Times


    OCR Scan     		PDF IMS1800M MIL-STD-883C 300-mil 256Kx1

    Untitled

    Abstract: No abstract text available
    Text: Preliminary IIIÌMÌIII AffHSl September 1989 OPEN ASIC DATASHEET MAF GATE ARRAY SERIES 1.2 MICRON CMOS FEATURES . . . . . . HIGH LOAD DRIVE CAPABILITY EXCEEDING 35 mA • GATE COUNTS : 250 AND 800 . WIDE PACKAGE RANGE . EXCELLENT FOR FUSE PROGRAMMABLE ARRAYS AND BIPOLAR LOGIC REPLACE­


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 HS-65647RH Radiation Hardened December1992 8K x 8 SOS CMOS Static RAM Functional Diagram Features • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 10s RAD SI - Transient Upset >1 x 1011 RAD (Siys - Single Event Upset < 1 x 10'12 Errors/Bit-Day


    OCR Scan     		PDF r1992 HS-65647RH 100mA 313x291

    Untitled

    Abstract: No abstract text available
    Text: HS-26CT31MS H A R R IS SEMICONDUCTOR Radiation Hardened Quad Differential Line Driver Decem ber 1992 Pinouts Features HS1-26CT31MSR 16 PIN CERAMIC DUAL-IN-LINE CASE OUTLINE D2, CONFIGURATION 3 TOP VIEW • 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD SI


    OCR Scan     		PDF HS-26CT31MS HS1-26CT31MSR RS-422 2140nm x3290nm) HS-26C32MS

    Untitled

    Abstract: No abstract text available
    Text: SYSTEMS SLA8000 Series June 1988 VERY HIGH SPEED CHANNELLESS CMOS GATE ARRAYS D escription The SLA8000 Series consists of a group of seven very high-speed, sea-of-gates CMOS gate arrays. The series is fabricated utilizing our state-of-the-art 1.2 micron sili­


    OCR Scan     		PDF SLA8000 SLA827S

    transistor B324

    Abstract: transistor B324 pin out B324 transistor off grid inverter schematics full subtractor circuit nand gates ALI 3105 i203 transistor B304 transistor mxe3
    Text: H o n eyw ell 4551872 HO NE Y WE LL / SS HC20000 ELEK, M IL 03E 00236 D Preliminary HIGH-PERFORMANCE CMOS GATE ARRAY FEATURES • Performance Optimized Series of 1.2-Micron CMOS Gate Arrays 1Proven VLSI Design System VDS Toolkit •Boundary and Internal Scan


    OCR Scan     		PDF HC20000 transistor B324 transistor B324 pin out B324 transistor off grid inverter schematics full subtractor circuit nand gates ALI 3105 i203 transistor B304 transistor mxe3