2SC2178

Abstract: copper wire
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2178 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=15W Min. ( f=175MHz, VCC=12.5V, Pi=1.3W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=15V, Pl=1.3W, f=175MHz

2sa1793

Abstract: 2sc4657
Contextual Info: 2SA1793 SILICON PNP EPITAXIAL TYPE Unit in mm HIGH CURRENT SW ITCHING APPLICATIONS. • • • • Excellent hpE Linearity : hpE 120~400 at V c e = —IV, l£ = —1A Low Collector Saturation Voltage : v CE sat = -0.4V(M ax.) at I c = -3 A , Ib = -0.15A High Power Dissipation : PQ = 1.3W(Ta = 25°C)

Contextual Info: Ultra-Small Ceramic Power Splitter/Combiner 2 Way-0° 50Ω 2825 to 3700 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 4W* max. *derate linearly to 1.3W at 100°C ambient, power input as

SFPD-MR-12

Contextual Info: P/N: SFPD-MR-xx-xx-A Multi-Rate DWDM SFP Transceiver Features Available in all 100 GHz C-Band Wavelengths on the DWDM ITU Grid DWDM SFP MSA Compliant Cold Start Up Wavelength Compliance Low Power Dissipation < 1.3W Maximum -5ºC to 70ºC Operating Case Temperature

AN374

Abstract: 374 J panasonic fj
Contextual Info: AN 374 7T— AN374 1.3wtaatii»*ï8/i.3 W •* « / Description AN 374 ;± 7 i - - v r , X T ■ Audio Power Amplifiers Circuit u U n it ! mm +& Îüt/Features • ;b ô i . 3 W i t « t • f ü g i± 1 l i s T - '' A 7 -f tjiïïte ffll-iîs+ S H ct E Oi

ITT333105BD

Abstract: 1008CS C0805C472K5RAC C1206C104K5RAC LL2012-F1N5S
Contextual Info: 4.6V 1.3W RF Power Amplifier IC for ETACS ITT333105BD Applications PRELIMINARY Features • • • • • • • ETACS Cellular Telephones ISM 900 MHz +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C -VGG Class AB Bias 800 to 1000 MHz Operation

ZPY100

Contextual Info: ZPY1 thru ZPY100 Zener Diodes VZ Range 1.0, 3.9 to 100V Power Dissipation 1.3W min. 1.102 28.0 max. .161 (4.1) min. 1.102 (28.0) DO-204AL (DO-41 Glass) Features max. ∅ 0.102 (2.6) Cathode Mark • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits with

FV1206-1

Abstract: SCN-2-65
Contextual Info: Ultra-Small Ceramic SCN-2-65+ SCN-2-65 Power Splitter/Combiner 2 Way-0° 50Ω 5500 to 6500 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 4W* max. *Derate linearly to 1.3W at 100°C ambient, power input as combiner is limited by rating of external 100Ω Resistor.

Contextual Info: T O SH IB A 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : v CE(sat) = °-5V (Max.) • High Collector Power Dissipation : P q = 1.3W (Ta = 25°C)

Contextual Info: KSB1149 KSB1149 Low Collector Saturation Voltage Built-in Damper Diode at E-C • High DC Current Gain • High Power Dissipation : PC=1.3W Ta=25°C TO-126 1 1. Emitter 2.Collector 3.Base PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KTA1385D/L EPITAXIAL PLANAR PNP TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES • High Power Dissipation : Pc=1.3W Ta=25°C • Complementary to KTC5103D/L MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL

ZPY10

Abstract: ZPY100 DO-204AL ZMY10 ZMY100 ZPY11 ZPY12 ZPY13 ZPY15
Contextual Info: ZPY1 thru ZPY100 Zener Diodes VZ Range 1.0, 3.9 to 100V Power Dissipation 1.3W min. 1.102 28.0 max. .161 (4.1) min. 1.102 (28.0) DO-204AL (DO-41 Glass) Features max. ∅ 0.102 (2.6) Cathode Mark • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits with

NPN 2A TO 126

Abstract: KSD1691 K*D1691
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 KSD1691 TRANSISTOR NPN 1. EMITTER FEATURES Low Collector-Emitter Saturation Voltage & Large Collector Current z High Power Dissipation: PC = 1.3W (Ta=25°C)

M917

Abstract: MCL 0 splitter PL-129
Contextual Info: Ultra-Small Ceramic ! NEW Power Splitter/Combiner 2 Way-0° 50Ω 3700 to 4200 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 4W* max. *derate linearly to 1.3W at 100°C ambient, power input as

LM4995

Abstract: LM4995TM
Contextual Info: LM4995 1.3 Watt Audio Power Amplifier General Description Key Specifications The LM4995 is an audio power amplifier primarily designed for demanding applications in mobile phones and other portable communication device applications. It is capable of delivering 1.3W of continuous average power to an 8Ω BTL

c 4072

Abstract: SCN-2-45 FV1206-1
Contextual Info: Ultra-Small Ceramic SCN-2-45+ SCN-2-45 Power Splitter/Combiner 2 Way-0° 50Ω 3700 to 4200 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 4W* max. *derate linearly to 1.3W at 100°C ambient, power input as

Contextual Info: 19-3457; Rev 1; 9/05 1.3W, Filterless, Stereo Class D Audio Power Amplifier The MAX9701 stereo Class D audio power amplifier provides Class AB amplifier audio performance with the benefits of Class D efficiency, eliminating the need for a heatsink while extending battery life. The MAX9701

Contextual Info: Ultra-Small Ceramic SCN-2-65+ SCN-2-65 Power Splitter/Combiner 2 Way-0° 50Ω 5500 to 6500 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 4W* max. *Derate linearly to 1.3W at 100°C ambient, power input as combiner is limited by rating of external 100Ω Resistor.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors TO-126C KSD1691 TRANSISTOR NPN 1. EMITTER FEATURES Low Collector-Emitter Saturation Voltage & Large Collector Current z High Power Dissipation: PC = 1.3W (Ta=25°C)

BZX85

Abstract: BZX85 C27 BZX85 series Zener Z 5 BZX85-C2V7 BZX85-C3V0 BZX85-C3V3 BZX85-C3V6 BZX85-C3V9 BZX85-C4V3
Contextual Info: BZX85 Series ZENER DIODES PRODUCT SUMMARY VZ range: 3.6 to 200 Volts Power dissipation: 1.3W FEATURES Silicon Planar Power Zener Diodes. For use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international

BZX85C12

Abstract: BZX85 zener 1.3W BZX85 C27 BZX85-C12 BZX85-C2V7 BZX85-C3V0 BZX85-C3V3 BZX85-C3V6 BZX85-C3V9
Contextual Info: BZX85-C12 ZENER DIODES PRODUCT SUMMARY VZ range: 3.6 to 200 Volts Power dissipation: 1.3W FEATURES Silicon Planar Power Zener Diodes. For use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international

Contextual Info: 114 Surface M ount Devices Zener Diodes, SOT-223 1.3W , Pinout W (cont.) VZ <V) at 'ztest=5 mA Type BZV90C 22 B ZV90C 24 min. max. typ. 2 3 .3 2 5 .6 20 25 2 0 .8 2 2 .8 t 'Ztest- 2 BZV90C 27 25.1 BZV90C30 2 8 .0 3 1 .0 3 4 .0 BZV90C33 BZV90C36 BZV90C39

2SC5028

Abstract: 2SA1891
Contextual Info: TOSHIBA 2SC5028 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5028 Unit in mm POWER SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : VCE (sat)~ —0.5V (Max.) High Collector Power Dissipation : P(} = 1.3W (Ta = 25°C)

Contextual Info: Ultra-Small Ceramic ! NEW Power Splitter/Combiner 2 Way-0° 50Ω 5500 to 6500 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 4W* max. *derate linearly to 1.3W at 100°C ambient, power input as combiner