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    1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND Search Results

    1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2n222

    Abstract: MJE13002 equivalent mje13003 equivalent 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND MJE13002D MJE13002 MJE13003 1N4933 2N2905 MJE210
    Text: ON Semiconductort MJE13002 * MJE13003 * SWITCHMODEt Series NPN Silicon Power Transistors *ON Semiconductor Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS These devices are designed for high–voltage, high–speed power


    Original     		PDF MJE13002 MJE13003 r14525 MJE13002/D transistor 2n222 MJE13002 equivalent mje13003 equivalent 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND MJE13002D MJE13002 MJE13003 1N4933 2N2905 MJE210

    mje13003 equivalent

    Abstract: MJE13002 equivalent equivalent mje13003 MJE13002 2N2222 NPN Transistor features 2N2905 MOTOROLA MJE13003 1N4933 1N5820 2N2905
    Text: MOTOROLA Order this document by MJE13002/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE13002 * MJE13003 *  Data Sheet SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS


    Original     		PDF MJE13002/D* MJE13002/D mje13003 equivalent MJE13002 equivalent equivalent mje13003 MJE13002 2N2222 NPN Transistor features 2N2905 MOTOROLA MJE13003 1N4933 1N5820 2N2905

    2SC103

    Abstract: MJE3055T equivalent bd139 3v BU108 2N3055 blocking bd139 equivalent transistor TR TIP3055 BDX54 mje13003 equivalent 50W AMP 2SD718 2SB688
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13002* MJE13003*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS These devices are designed for high–voltage, high–speed power switching


    Original     		PDF MJE13002* MJE13003* POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC103 MJE3055T equivalent bd139 3v BU108 2N3055 blocking bd139 equivalent transistor TR TIP3055 BDX54 mje13003 equivalent 50W AMP 2SD718 2SB688

    mj150* darlington

    Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
    Text: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35


    Original     		PDF 2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp

    1n5822 DO214

    Abstract: MPSA92 168 1n4007 DO214 1N4004 trr MPSA42 168 schottky do-41 C 1450
    Text: SILICON RECTIFIERS OPERATING AND STORAGE TEMPERATURE -65oC TO +175oC TYPE MAXIMUM PEAK REVERSE VOLTAGE MAXIMUM AVERAGE RECTIFIED CURRENT @ HALF-WAVE RESISTIVE LOAD 60HZ MAXIMUM FORWARD PEAK SURGE CURRENT @8.3MS SUPERIMPOSED MAXIMUM REVERSE CURRENT @PRV @ 25oC TA


    Original     		PDF -65oC 175oC AMPERE/DO-41 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1n5822 DO214 MPSA92 168 1n4007 DO214 1N4004 trr MPSA42 168 schottky do-41 C 1450

    je13003

    Abstract: je13003 TRANSISTOR JE13002 transistor JE13003 transistor JE 1090 mje1300 MJE13003 motorola mje13 MJE-13003 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13002* MJE13003* D esigner's Data Sheet •Motoroi» PraMrrad Unie* SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS These devices are designed for high-voltage, high-speed power switching


    OCR Scan     		PDF MJE13002* MJE13003* je13003 je13003 TRANSISTOR JE13002 transistor JE13003 transistor JE 1090 mje1300 MJE13003 motorola mje13 MJE-13003 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND

    13003 TRANSISTOR equivalent

    Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor
    Text: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS


    OCR Scan     		PDF MJE13002/D O-225AA 13003 TRANSISTOR equivalent transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor

    2N6545

    Abstract: 2N6544 S200 300 volt 16 ampere transistor
    Text: ÜE MOS PEC SWITCH MODE SERIES NPN SILICON POWER TRANSISTORS The 2N6544 and 2N6545 transistors are designed for highvoltage .high-speed,power switching inductive circuits where fall NPN 2N6544 2N6545 time is critical.they are particularly, suited for 115 and 220 volt line


    OCR Scan     		PDF 2N6544 2N6545 S200 300 volt 16 ampere transistor

    2N6259

    Abstract: 2N6259 amplifier
    Text: Ü&MOSPEC HIGH POWER NPN SILICON TRANSISTORS NPN 2N6259 The 2N6259 is power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and dc to dc converters or inverters. FEATURES:


    OCR Scan     		PDF 2N6259 2N6259 amplifier

    2N6543

    Abstract: 2N6542 S200
    Text: ÆlMOSPEC SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS NPN These devices are designed for high-voltage,high-speed,power 2N6542 2N6543 switching inductive circuits where fall time is critical.they are particu­ larly,suited for 115 and 220 volt line operated SWITCHMODE appli­


    OCR Scan     		PDF 2N6542 2N6543 2N6542, S200

    2N6547

    Abstract: 2N654 12 volt 200 Amp PWM 2N6546
    Text: SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS The 2N6546 and 2N6547 transistors are designed for high- NPN 2N6546 2N6547 voltage .high-speed,power switching inductive circuits where fail time is criticai.they are particularly, suited for 115 and 220 volt line


    OCR Scan     		PDF 2N6546 2N6547 2N6546 2N654? 2N654Speratures, F0R2N6546 VCFXARE100 2N6S46, 2N654 12 volt 200 Amp PWM

    2N6488 MOTOROLA

    Abstract: 1N5825 221A-06 2N6487 2N6488 2N6490 2N6491 2N6497 MSD6100 ISS-20
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon P lastic Power Transistors 2N 6488* PNP . . . designed for use in general-purpose amplifier and switching applications. 2N 6490 2 N6491* • DC Current Gain Specified to 15 Amperes —


    OCR Scan     		PDF 2N6487 2N6490 2N6488 2N6491 O-220AB 2N6490 2N6491 2N6488 MOTOROLA 1N5825 221A-06 2N6497 MSD6100 ISS-20

    2N6547

    Abstract: 2N6546 12 volt 200 Amp PWM
    Text: Æ&m o s p e c SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS NPN The 2N6546 and 2N6547 transistors are designed for highvoltage .high-speed,power switching inductive circuits where fail 2N6546 2N6547 time is criticai.they are particularly, suited for 115 and 220 volt line


    OCR Scan     		PDF 2N6546 2N6547 2N654S F0R2N6546 VCFXARE100 2N6S46, 12 volt 200 Amp PWM

    2N6543

    Abstract: 2N6542 S200 LB 122 NPN TRANSISTOR
    Text: SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS These devices are designed for high-voltage,high-speed,power NPN 2N6542 2N6543 switching inductive circuits where fall time is critical.they are particu­ larly,suited for 115 and 220 volt line operated SWITCHMODE appli­


    OCR Scan     		PDF 2N6542 2N6543 2N6542, S200 LB 122 NPN TRANSISTOR

    MJ10005

    Abstract: 100 amp npn darlington power transistors MJ10004 10 amp npn darlington power transistors
    Text: ¿Z&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10004 MJ10005 The MJ10004 and MJ10005 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


    OCR Scan     		PDF MJ10004 MJ10005 MJ10004, MJ10005, Ic/Ib-25 100 amp npn darlington power transistors 10 amp npn darlington power transistors

    MJ10009

    Abstract: 100 amp npn darlington power transistors 10 amp npn darlington power transistors MJ10008 LDLB 16 amp npn darlington power transistors MJ-10009 mj10 100 mhz hf diode 50 ampere MJ10008.10009
    Text: /Z&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10008 The MJ10008 and MJ10009 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


    OCR Scan     		PDF MJ10008 MJ10009 1125e 100 amp npn darlington power transistors 10 amp npn darlington power transistors LDLB 16 amp npn darlington power transistors MJ-10009 mj10 100 mhz hf diode 50 ampere MJ10008.10009

    MJ10009

    Abstract: MJ10008
    Text: SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10008 The MJ10008 and MJ10009 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


    OCR Scan     		PDF MJ10008 MJ10009 500mA

    2N5038

    Abstract: 2N5039
    Text: Æ&m o s p e c NPN SILICON POWER TRANSISTORS NPN 2N5038 2N5039 . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications.


    OCR Scan     		PDF 2N5038 2N5039

    2N4901

    Abstract: 2N4903 2N5068 2N4902 2N5067 2N5069
    Text: COMPLEMENTARY SILICON TRANSISTORS General Purpose use in power amplifier and switching circuits. FEATURES: *DC Current Gain Specified HFE=20 - 80 @ lc= 1.0 A * Low Collector-Emitter Saturation Voltage VCE sat = 1 .5 V (M a X .)@ lc =5.0 A Boca Sem iconductor C orp


    OCR Scan     		PDF 2N4901 2N5067 2N4902 2N5068 2N4903 2N5069 2N5068 2N5067 2N5069

    2N3442

    Abstract: 2N4347 transistor 2n3442 NPN Transistor 10A 70V NPN 300 VOLTS vce POWER TRANSISTOR HF9 transistor pec 928
    Text: Æà MOS PEC HIGH-POWER INDUSTRIAL TRANSISTORS NPN 2N3442 NPN silicon power transistors designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. 2N4347 FEATURES:


    OCR Scan     		PDF 2N4347 2N3442 2N3442 2N4347 transistor 2n3442 NPN Transistor 10A 70V NPN 300 VOLTS vce POWER TRANSISTOR HF9 transistor pec 928

    2N6301 applications

    Abstract: 2N6300 2N6298 2N6299 2N6301
    Text: DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS General-purpose power amplifier and low frequency switching applications Boca Semiconductor Corp FEATURES: RSr * Low Collector-Emitter Saturation Voltage v c e <s a t t 2 0V M ax @ lc= 4 0 A http://www.bocasemi.com


    OCR Scan     		PDF 2N6298 2N6300 2N6299 2N6301 2N6300 2N6301 2N6301 applications

    MJ10005

    Abstract: MJ10004 10 amp npn darlington power transistors
    Text: SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10004 MJ10005 The MJ10004 and MJ10005 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


    OCR Scan     		PDF MJ10004 MJ10005 MJ10004, MJ10005, Ic/Ib-25 10 amp npn darlington power transistors

    2N5038

    Abstract: 2N5039 2N6039 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND
    Text: NPN SILICON POWER TRANSISTORS NPN 2N5038 2N5039 . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. FEATURES:


    OCR Scan     		PDF 2N5038 2N5039 2N5039 2N6039 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND

    2N5683

    Abstract: 2N5684 2N5685 2N5686 amplifier 2N5686 2NS685 2n5686 gain
    Text: ÆàMOSPEC HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS PNP 2N5683 2N5684 . designed for use in high-power amplifier and switching circuit NPN 2N5685 2N5686 applications FEATURES: * Continuous Collector Current - lc = 50 A * Power Dissipation - PD = 300 W @ Tc = 25°C


    OCR Scan     		PDF 2N5683 2NS685 2N5684 2N5686 2N5683, 2N5685 2N5684, 2N5686 2N5685 amplifier 2N5686 2n5686 gain