Untitled
Abstract: No abstract text available
Text: FDMC2523P P-Channel QFET tm -150V, -3A, 1.5Ω Features General Description ̈ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has
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FDMC2523P
-150V,
FDMC2523P
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R015 marking
Abstract: No abstract text available
Text: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has
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FDMC2523P
-150V,
R015 marking
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Untitled
Abstract: No abstract text available
Text: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has
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FDMC2523P
-150V,
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FDMC2523P
Abstract: No abstract text available
Text: FDMC2523P P-Channel QFET tm -150V, -3A, 1.5Ω Features General Description Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has
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FDMC2523P
-150V,
FDMC2523P
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Untitled
Abstract: No abstract text available
Text: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has
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FDMC2523P
-150V,
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mosfet p-ch enhancement
Abstract: No abstract text available
Text: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has
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FDMC2523P
-150V,
mosfet p-ch enhancement
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Untitled
Abstract: No abstract text available
Text: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Ch annel MOSFET enhancement mode power field effect transistors are produced using Fairchild's pr oprietary, planar stripe, DMOS technology. This advanced technology has
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FDMC2523P
-150V,
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1.5A 150V power mosfet
Abstract: No abstract text available
Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS3KMA-5A FS3KMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS3KMA-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2
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O-220FN
1.5A 150V power mosfet
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY FS3KMA-5A FS3KMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS3KMA-5A OUTLINE DRAWING
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ultrasonic piezoelectric transducer driver
Abstract: ultrasound sonar pulser Piezoelectric ultrasound Transducer HV7355 ultrasonic transducer circuit 1 MHz ultrasonic generator 1 Mhz ultrasound transducer circuit driver ultrasound transducer high power driver mems ultrasonic sensors circuit for piezoelectric transducer
Text: Product Summary Sheet HV7355 Eight-Channel, High Speed, Unipolar, Ultrasound Pulser 1.5A 150V Applications: VDD AVDD VLL ►► Hand held and portable diagnostic medical ultrasound scanners ►► Piezoelectric transducer drivers ►► NDT transmitters ►► Pulse waveform
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HV7355
56-Lead
HV7355
HV7355K6-G
HV7355,
ultrasonic piezoelectric transducer driver
ultrasound sonar pulser
Piezoelectric ultrasound Transducer
ultrasonic transducer circuit 1 MHz
ultrasonic generator 1 Mhz
ultrasound transducer circuit driver
ultrasound transducer high power driver
mems ultrasonic sensors
circuit for piezoelectric transducer
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RDX030N60
Abstract: No abstract text available
Text: RDX030N60 Transistors 10V Drive Nch MOSFET RDX030N60 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.
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RDX030N60
O-220FM
RDX030N60
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Untitled
Abstract: No abstract text available
Text: PA96 PA96 PA96 Power Operational Amplifier FEATURES • • • • • HIGH VOLTAGE - 300 VOLTS HIGH OUTPUT CURRENT – 1.5 AMPS 70 WATT DISSIPATION CAPABILITY 175 MHz GAIN BANDWIDTH 250 V/µ-SECOND SLEW RATE APPLICATIONS • • • • 8-PIN TO-3 PACKAGE STYLE CE
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PA96U
PA96U
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IRF9622
Abstract: IRF9620 IRF9623 IRF9621 TB334
Text: IRF9620, IRF9621, IRF9622, IRF9623 S E M I C O N D U C T O R -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF9620,
IRF9621,
IRF9622,
IRF9623
-150V
-200V,
-200V
IRF9622
IRF9620
IRF9623
IRF9621
TB334
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PA96 application circuit
Abstract: PZT Transducer
Text: PA96 PA96 PA96 Power Operational Amplifier FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH • 250 V/µ-SECOND SLEW RATE APPLICATIONS • PZT DRIVE • MAGNETIC DEFLECTION
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PA96U
PA96 application circuit
PZT Transducer
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Untitled
Abstract: No abstract text available
Text: PA96 PA96 PA96 Power Operational Amplifier FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH • 250 V/µ-SECOND SLEW RATE APPLICATIONS • PZT DRIVE • MAGNETIC DEFLECTION
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PA96U
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 F3S90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2665
F3S90HVX2
STO-220
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Untitled
Abstract: No abstract text available
Text: PA96 PA96 PA96 Power Operational Amplifier FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH • 250 V/µ-SECOND SLEW RATE APPLICATIONS • PZT DRIVE • MAGNETIC DEFLECTION
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PA96U
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Untitled
Abstract: No abstract text available
Text: PA96 PA96 P r o d uPA96 c t IInnnnoovvaa t i o n FFr roomm Power Operational Amplifier FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH • 250 V/µ-SECOND SLEW RATE APPLICATIONS
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PA96U
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PA96
Abstract: No abstract text available
Text: ���������������������������� ���� � � � � � � � � � � � � � � � ��������������������������������������������������������������
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290kHz
PA96U
PA96
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PA96 application circuit
Abstract: PA96 PA08 PA08A 800 watt audio mosfet amplifier
Text: ���������������������������� ���� � � � � � � � � � � � � � � � ��������������������������������������������������������������
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PA96U
PA96 application circuit
PA96
PA08
PA08A
800 watt audio mosfet amplifier
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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Untitled
Abstract: No abstract text available
Text: 2SK1085-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier
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2SK1085-MR
O-220F15
SC-67
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Untitled
Abstract: No abstract text available
Text: ���������������������������� ���� � � � � � � � � � � � � � � � ��������������������������������������������������������������
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PA96U
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IS-2100ARH
Abstract: IS2100ARH IS9-2100ARH-Q IS9-2100ARH8 high frequency half bridge IS921 5962F9953602VXC
Text: IS-2100ARH TM Data Sheet September 2001 Radiation Hardened High Frequency Half Bridge Driver File Number 9037 Features • Electrically Screened to DSCC SMD # 5962-99536 The Radiation Hardened IS-2100ARH is a high frequency, 150V Half Bridge N-Channel MOSFET Driver IC, which is a
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IS-2100ARH
IS-2100ARH
IS2100ARH
IS9-2100ARH-Q
IS9-2100ARH8
high frequency half bridge
IS921
5962F9953602VXC
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