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    1.8 GHZ VCO Search Results

    1.8 GHZ VCO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    F2950EVBI Renesas Electronics Corporation Evaluation Board for High Linearity Broadband SP2T WiFi 100MHz to 8GHz RF Switch Visit Renesas Electronics Corporation
    F2950NEGK Renesas Electronics Corporation High Linearity Broadband SP2T WiFi 100MHz to 8GHz RF Switch Visit Renesas Electronics Corporation
    F2950NEGK8 Renesas Electronics Corporation High Linearity Broadband SP2T WiFi 100MHz to 8GHz RF Switch Visit Renesas Electronics Corporation
    LMH5401IRMSR Texas Instruments 8GHz Ultra Wideband Fully Differential Amplifier 14-UQFN -40 to 85 Visit Texas Instruments Buy
    LMH5401IRMST Texas Instruments 8GHz Ultra Wideband Fully Differential Amplifier 14-UQFN -40 to 85 Visit Texas Instruments Buy

    1.8 GHZ VCO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    stripline filter

    Abstract: BGA2012 TDK0603 TRANSISTOR SMD nf c4 High IP3 MMIC LNA at 1.8-2.4 GHz
    Text: H High IP3 MMIC LNA at 1.8-2.4 GHz Application note for the BGA2012 The BGA2012 is a MMIC 50 Ω LNA block for cellular applications at 1.8 GHz to 2.4 GHz that require low noise, high gain and good linearity. Possible applications: • 1.8 GHz - DECT - gain 15 dB, low noise 1.7 dB, supply curent 4 mA


    Original     		PDF BGA2012 BGA2012 OT363. -------20mm-------> TDK0603 stripline filter TDK0603 TRANSISTOR SMD nf c4 High IP3 MMIC LNA at 1.8-2.4 GHz

    HS350

    Abstract: UPG2006TB UPG2006TB-E3 VP215
    Text: NEC's 1.8 V L, S-BAND UPG2006TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS = 0.3 dB TYP. @ Vcont = 1.8 V/0 V, f = 1 GHz LINS = 0.45 dB TYP. @ Vcont = 1.8 V/0 V, f = 2.5 GHz NEC's UPG2006TB is a L, S-band SPDT Single Pole Double Throw switch for digital cellular or cordless telephone


    Original     		PDF UPG2006TB UPG2006TB HS350 HS350 UPG2006TB-E3 VP215

    loral coaxial switch

    Abstract: clapp oscillator fm receiver toko MC12179 MMBV809 GSM siemens vco LNA Mixer VCO 2.4 GHz SIEMENS saw filter P33K KV2111
    Text: Freescale Semiconductor, Inc.Order this document By MC13142/D ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MC13142 Advance Information Low Power DC - 1.8 GHz • • • • • • • • • • LOW POWER DC – 1.8 GHz LNA, MIXER and VCO SEMICONDUCTOR


    Original     		PDF MC13142/D MC13142 MC13142 loral coaxial switch clapp oscillator fm receiver toko MC12179 MMBV809 GSM siemens vco LNA Mixer VCO 2.4 GHz SIEMENS saw filter P33K KV2111

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc.Order this document By MC13142/D ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MC13142 Advance Information Low Power DC - 1.8 GHz • • • • • • • • • • LOW POWER DC – 1.8 GHz LNA, MIXER and VCO SEMICONDUCTOR


    Original     		PDF MC13142/D MC13142 MC13142

    lm 4572 SMD 8 PIN

    Abstract: 2904 SMD IC SMD TRANSISTOR H2A NPN smd transistor h2a SMD H2A motorola smd transistor code 935 smd code H2A 0011 TRANSISTOR transistor smd H2A h2a smd
    Text: MC13142 Product Preview Low Power DC - 1.8 GHz LNA, Mixer and VCO LOW POWER DC – 1.8 GHz LNA, MIXER and VCO The MC13142 is intended to be used as a first amplifier, voltage controlled oscillator and down converter for RF applications. It features wide band


    Original     		PDF MC13142 MC13142 lm 4572 SMD 8 PIN 2904 SMD IC SMD TRANSISTOR H2A NPN smd transistor h2a SMD H2A motorola smd transistor code 935 smd code H2A 0011 TRANSISTOR transistor smd H2A h2a smd

    BFR36

    Abstract: smd transistor marking ZS BFR360L3 BFR460L3 BFS466L6 TR2 SMD TR235
    Text: BFS466L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.0 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS466L6 BFR460L3, BFR360L3) Sep-01-2003 BFR36 smd transistor marking ZS BFR360L3 BFR460L3 BFS466L6 TR2 SMD TR235

    BFR460L3

    Abstract: BFR949L3 BFS469L6 BFR94
    Text: BFS469L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.5 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS469L6 BFR460L3, BFR949L3) BFR460L3 BFR949L3 BFS469L6 BFR94

    Untitled

    Abstract: No abstract text available
    Text: Order this document from Analog Marketing MC13142 Prototype Information Low Power DC - 1.8 GHz LNA, Mixer and VCO LOW POWER DC – 1.8 GHz LNA, MIXER and VCO The MC13142 is intended to be used as a first amplifier, voltage controlled oscillator and down converter for RF applications. It features wide band


    Original     		PDF MC13142 MC13142 MC13142/D* MC13142/D

    SMD 6PIN IC MARKING CODE p

    Abstract: SMD 6PIN IC MARKING CODE 1G SMD 6PIN IC MARKING CODE marking code CB SMD ic K1 MARK 6PIN TRANSISTOR SMD MARKING CODE 2x SMD 6PIN IC MARKING CODE IP SMD transistor MARKING code 1g TRANSISTOR SMD MARKING CODE ce BFR94
    Text: BFS469L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.5 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS469L6 BFR460L3, BFR949L3) Sep-01-2003 SMD 6PIN IC MARKING CODE p SMD 6PIN IC MARKING CODE 1G SMD 6PIN IC MARKING CODE marking code CB SMD ic K1 MARK 6PIN TRANSISTOR SMD MARKING CODE 2x SMD 6PIN IC MARKING CODE IP SMD transistor MARKING code 1g TRANSISTOR SMD MARKING CODE ce BFR94

    SMD MARKING CODE 102c

    Abstract: marking code CB SMD tr2 TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE ce SMD 6PIN IC MARKING CODE p SMD 6PIN IC MARKING CODE marking code AC SMD ic K1 MARK 6PIN SMD 6PIN IC MARKING CODE 15 TRANSISTOR SMD MARKING CODE 2x 3
    Text: BFS466L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.0 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS466L6 BFR460L3, BFR360L3) Sep-01-2003 SMD MARKING CODE 102c marking code CB SMD tr2 TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE ce SMD 6PIN IC MARKING CODE p SMD 6PIN IC MARKING CODE marking code AC SMD ic K1 MARK 6PIN SMD 6PIN IC MARKING CODE 15 TRANSISTOR SMD MARKING CODE 2x 3

    LNA Mixer VCO 2.4 GHz

    Abstract: TQFP-20 Intermediate frequency transformer TOKO CERAMIC FILTER 450 clapp oscillator transistor Common collector configuration SO16 footprint rf receiver circuit image frontend filter RF LNA 10 GHz
    Text: Order this document from Analog Marketing MC13142 Product Preview Low Power DC - 1.8 GHz LNA, Mixer and VCO LOW POWER DC – 1.8 GHz LNA, MIXER and VCO The MC13142 is intended to be used as a first amplifier, voltage controlled oscillator and down converter for RF applications. It features wide band


    Original     		PDF MC13142 MC13142 MC13142/D* MC13142/D LNA Mixer VCO 2.4 GHz TQFP-20 Intermediate frequency transformer TOKO CERAMIC FILTER 450 clapp oscillator transistor Common collector configuration SO16 footprint rf receiver circuit image frontend filter RF LNA 10 GHz

    BFR460

    Abstract: No abstract text available
    Text: BFS466L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.0 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS466L6 BFR460L3, BFR360L3) Sep-01-2003 BFR460

    smd tr1

    Abstract: BFR460L3 BFR949L3 BFS469L6 BFR94
    Text: BFS469L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.5 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS469L6 BFR460L3, BFR949L3) Sep-01-2003 smd tr1 BFR460L3 BFR949L3 BFS469L6 BFR94

    marking g2j

    Abstract: mmic e3 UPG2006TB UPG2006TB-E3 GaAs MMIC SPDT Switch SOT-363
    Text: PRELIMINARY DATA SHEET L,S BAND 1.8 V CONTROL VOLTAGE SPDT GaAs MMIC SWITCH UPG2006TB OUTLINE DIMENSIONS Units in mm FEATURES • LOW CONTROL VOLTAGE: 1.8 V PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.30 dB TYP at f = 1 GHz LINS = 0.45 dB TYP at f = 2.5 GHz


    Original     		PDF UPG2006TB UPG2006TB UPG2006TB-E3 24-Hour marking g2j mmic e3 UPG2006TB-E3 GaAs MMIC SPDT Switch SOT-363

    Si4133-EVB

    Abstract: Si4133HF Si4113 Si4122 Si4123 Si4133 Si4133-BT Si4133HF1 Si4133-KT
    Text: Si4133 RF Synthesizer DUAL-BAND RF FREQUENCY SYNTHESIZER WITH INTEGRATED VCOs FOR WIRELESS COMMUNICATIONS FEATURES • Dual-band RF Synthesizers: RF1 900 MHz to 1.8 GHz RF2 750 MHz to 1.5 GHz • IF Synthesizer: IF 62.5 MHz to 1.0 GHz • High frequency “HF” devices available—


    Original     		PDF GSM/DCS1800 Si4133 24-pin Si4133HF Si4133HF1 Si4133; Si4123 Si4133-EVB Si4113 Si4122 Si4123 Si4133-BT Si4133-KT

    gsm transceiver

    Abstract: PROGRAMMABLE SYNTHESIZER voltage controlled oscillator synthesizer Si4113G Si4122G Si4123G Si4133G Si4133G-X2 Si4133GX2-DS GSM kit for silicon
    Text: Si4133G RF Synthesizer for GSM/GPRS DUAL-BAND RF FREQUENCY SYNTHESIZER WITH INTEGRATED VCOs FOR WIRELESS COMMUNICATIONS FEATURES • Dual-Band RF Synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz • IF Synthesizer IF: 500 MHz to 1.0 GHz • Settling time 140 µsec for multi-slot data


    Original     		PDF Si4133G GSM/DCS1800/PCS1900 Si4133G-DS Si4133G/23G/22G/13G Si4133GX2-DS Si4133G-X2 Si4133/36-EVB-DS gsm transceiver PROGRAMMABLE SYNTHESIZER voltage controlled oscillator synthesizer Si4113G Si4122G Si4123G GSM kit for silicon

    Si4112G

    Abstract: Si4113G Si4122G Si4123G Si4133G Si4133G-BT Si4133G-EVB Si4133G-KT
    Text: Si4133G RF Synthesizer for GPRS DUAL-BAND RF FREQUENCY SYNTHESIZER WITH INTEGRATED VCOs FOR WIRELESS COMMUNICATIONS FEATURES • Dual-Band RF Synthesizers: RF1 900 MHz to 1.8 GHz RF2 750 MHz to 1.5 GHz • IF Synthesizer: IF 62.5 MHz to 1.0 GHz • Settling time <150 µS for multi-slot data


    Original     		PDF Si4133G Si4133G-KT Si4122G Si4123G Si4133G-BT Si4113G Si4112G Si4133G-EVB

    ADF4217L

    Abstract: ADF4218L ADF4219L RF10
    Text: PRELIMINARY TECHNICAL DATA a Dual Low Power Frequency Synthesizers ADF4217L/ADF4218L/ADF4219L Preliminary Technical Data FEATURES Total IDD: 7.1 mA Bandwidth/RF 3.0 GHz ADF4217L/ADF4218L, IF 1.1 GHz ADF4219L, IF 1.0 GHz 2.6 V to 3.3 V Power Supply 1.8 V Logic Compatibility


    Original     		PDF ADF4217L/ADF4218L/ADF4219L ADF4217L/ADF4218L, ADF4219L, ADF4217L/ADF4218L/ADF4219L CC-24) MO-208, ADF4217L ADF4218L ADF4219L RF10

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY TECHNICAL DATA a Dual Low Power Frequency Synthesizers ADF4217L/ADF4218L/ADF4219L Preliminary Technical Data FEATURES Total IDD: 7.1 mA Bandwidth/RF 3.0 GHz ADF4217L/ADF4218L, IF 1.1 GHz ADF4219L, IF 1.0 GHz 2.6 V to 3.3 V Power Supply 1.8 V Logic Compatibility


    Original     		PDF ADF4217L/ADF4218L, ADF4219L, ADF4217L/ADF4218L/ADF4219L ADF4217L/ADF4218L/ADF4219L CC-24) MO-208, C02655

    Untitled

    Abstract: No abstract text available
    Text: Dual Low Power Frequency Synthesizers ADF4217L/ADF4218L/ADF4219L a FEATURES Total I DD: 7.1 mA Bandwidth/RF 3.0 GHz ADF4217L/ADF4218L, IF 1.1 GHz ADF4219L, IF 1.0 GHz 2.6 V to 3.3 V Power Supply 1.8 V Logic Compatibility Separate VP Allows Extended Tuning Voltage


    Original     		PDF ADF4217L/ADF4218L/ADF4219L ADF4217L/ADF4218L, ADF4219L, ADF4217L/ADF4218L/ADF4219L C02655â

    ADF4217L

    Abstract: ADF4218L ADF4219L RF10
    Text: a Dual Low Power Frequency Synthesizers ADF4217L/ADF4218L/ADF4219L FEATURES Total I DD: 7.1 mA Bandwidth/RF 3.0 GHz ADF4217L/ADF4218L, IF 1.1 GHz ADF4219L, IF 1.0 GHz 2.6 V to 3.3 V Power Supply 1.8 V Logic Compatibility Separate VP Allows Extended Tuning Voltage


    Original     		PDF ADF4217L/ADF4218L/ADF4219L ADF4217L/ADF4218L, ADF4219L, ADF4217L/ADF4218L/ADF4219L C02655 ADF4217L ADF4218L ADF4219L RF10

    digital real time clock

    Abstract: AN31 Si4133G-X2 Si4133G-XM2 Si4133G-XT2 PLL IC 566
    Text: Si4133G-X2 DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz IF synthesizer 1070.4, 1080, and 1089.6 MHz Integrated VCOs, loop filters, varactors, and resonators Minimal number of external


    Original     		PDF Si4133G-X2 24-pin 28-pin Si4133G-XT2 digital real time clock AN31 Si4133G-XM2 PLL IC 566

    AN31

    Abstract: Si4133G-X2 Si4133G-XM2 Si4133G-XT2 ne 566 vco
    Text: Si4133G-X2 DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz IF synthesizer 1070.4, 1080, and 1089.6 MHz Integrated VCOs, loop filters, varactors, and resonators Minimal number of external


    Original     		PDF Si4133G-X2 24-pin 28-pin Si4133G-XT2 AN31 Si4133G-XM2 ne 566 vco

    k1206

    Abstract: Ericsson B
    Text: ERICSSON 0 PTF 10112 60 Watts, 1.8-2.0 GHz LDMOS Field Effect Transistor Description The 10112 is a common source n-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts minimum output power. Ion implantation,


    OCR Scan     		PDF K1206 G-200, 1-877-GOLDMOS 1301-PTF10112 k1206 Ericsson B