Untitled
Abstract: No abstract text available
Text: PIC12LF1552 8-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features: • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 200 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical
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PIC12LF1552
16-Level
16-bit
FSRs60-4-227-8870
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Untitled
Abstract: No abstract text available
Text: PIC12LF1552 8-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features: • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 200 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical
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PIC12LF1552
16-Level
16-bit
DS41674B-page
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PDF
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Untitled
Abstract: No abstract text available
Text: PIC12LF1552 8-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features: • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 200 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical
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PIC12LF1552
16-Level
16-bit
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PDF
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PIC16F1503
Abstract: No abstract text available
Text: PIC16 L F1503 14-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features (PIC16LF1503): • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 260 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical
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PIC16
F1503
14-Pin
PIC16LF1503)
16-Level
16-bit
Registe31-416-690340
DS40001607C-page
PIC16F1503
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PDF
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Untitled
Abstract: No abstract text available
Text: PIC16 L F1507 20-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features (PIC16LF1507): • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 260 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical
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PIC16
F1507
20-Pin
PIC16LF1507)
16-Level
16-bit
Registe60-4-227-8870
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PDF
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PIC12 example pwm
Abstract: No abstract text available
Text: PIC12 L F1501 8-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features (PIC12LF1501): • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 260 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical
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PIC12
F1501
PIC12LF1501)
16-Level
16-bit
Registers-227-4068
DS40001615B-page
PIC12 example pwm
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PDF
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CY7C1305BV18
Abstract: CY7C1307BV18
Text: CY7C1305BV18 CY7C1307BV18 PRELIMINARY 18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports • 1.8V core power supply with HSTL Inputs and Outputs The CY7C1305BV18/CY7C1307BV18 are 1.8V Synchronous
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CY7C1305BV18
CY7C1307BV18
18-Mbit
CY7C1305BV18/CY7C1307BV18
CY7C1305BV18
CY7C1307BV18
18-Mb
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PDF
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QRMM0010
Abstract: No abstract text available
Text: QRMM0010 QUALIFICATION REPORT M36DR864CB/DB: 64 Mbit x16, Burst Flash Memory and 8 Mbit (x16) SRAM, 1.8V Multiple Memory Product INTRODUCTION The M36DR864CB/DB is a Multiple Memory Product which combines two memory technologies: a 64 Mbit 1.8V supply Flash memory and an 8 Mbit 1.8V supply Asynchronous SRAM. The Flash and SRAM components have separate power supplies and grounds and are distinguished by three chip enable inputs.
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QRMM0010
M36DR864CB/DB:
M36DR864CB/DB
M58CR064C/D
QRMM0010
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CY7C1305AV18
Abstract: CY7C1307AV18
Text: CY7C1305AV18 CY7C1307AV18 PRELIMINARY 18-Mb Burst of 4 Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports • 1.8V core power supply with HSTL Inputs and Outputs The CY7C1305AV18/CY7C1307AV18 are 1.8V Synchronous
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CY7C1305AV18
CY7C1307AV18
18-Mb
CY7C1305AV18/CY7C1307AV18
CY7C1305AV18
CY7C1307AV18
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PDF
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CY7C1305BV18
Abstract: CY7C1307BV18
Text: CY7C1305BV18 CY7C1307BV18 PRELIMINARY 18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports • 1.8V core power supply with HSTL Inputs and Outputs The CY7C1305BV18/CY7C1307BV18 are 1.8V Synchronous
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CY7C1305BV18
CY7C1307BV18
18-Mbit
CY7C1305BV18/CY7C1307BV18
CY7C1305BV18
CY7C1307BV18
18-Mb
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PDF
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CY7C1305AV18
Abstract: CY7C1307AV18
Text: CY7C1305AV18 CY7C1307AV18 PRELIMINARY 18-Mb Burst of 4 Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports • 1.8V core power supply with HSTL Inputs and Outputs The CY7C1305AV18/CY7C1307AV18 are 1.8V Synchronous
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CY7C1305AV18
CY7C1307AV18
18-Mb
CY7C1305AV18/CY7C1307AV18
CY7C1305AV18
CY7C1307AV18
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PDF
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ECHO schematic diagrams
Abstract: IS61NSCS25672 IS61NSCS25672-250B IS61NSCS25672-300B IS61NSCS25672-333B IS61NSCS51236 IS61NSCS51236-250B
Text: IS61NSCS25672 IS61NSCS51236 ISSI Σ RAM 256K x 72, 512K x 36 ADVANCE INFORMATION JUNE 2001 18Mb Synchronous SRAM Features • JEDEC SigmaRam pinout and package standard • Single 1.8V power supply VCC : 1.7V (min) to 1.9V (max) • Dedicated output supply voltage (VCCQ): 1.8V
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IS61NSCS25672
IS61NSCS51236
IS61NSCS25672-250B
209-pin
IS61NSCS25672-300B
IS61NSCS25672-333B
IS61NSCS51236-250B
ECHO schematic diagrams
IS61NSCS25672
IS61NSCS25672-250B
IS61NSCS25672-300B
IS61NSCS25672-333B
IS61NSCS51236
IS61NSCS51236-250B
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PDF
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Untitled
Abstract: No abstract text available
Text: IS61LSCS25672 IS61LSCS51236 ISSI SRAM 256K X 72, 512K X 36 ADVANCE INFORMATION JUNE 2002 18MB SYNCHRONOUS SRAM FEATURES • JEDEC SigmaRam pinout and package standard • Single 1.8V power supply VCC : 1.7V (min) to 1.9V (max) • Dedicated output supply voltage (VCCQ): 1.8V
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IS61LSCS25672
IS61LSCS51236
IS61LSCS51236
IS61LSCS25672-200B
IS61LSCS25672-225B
IS61LSCS25672-250B
IS61LSCS25672-300B
IS61LSCS25672-333B
IS61LSCS51236-200B
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PDF
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32-PIN
Abstract: No abstract text available
Text: LINVEX TECHNOLOGY, CORP. LX62VL1001 CMOS SRAM 128K x 8 Bit Very-Low Voltage Operating Static Ram FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 1.8 V to 3.6 V • Fast Access Time LX62VL1001-15 LX62VL1001-70 1.8V : ≤ 80ns 1.8V : ≤ 200ns 3.0V : ≤ 15ns
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LX62VL1001
LX62VL1001-15
LX62VL1001-70
200ns
LX62VL1001SC
32-PIN
LX62VL1001PC
LX62VL1001TC
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PDF
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Untitled
Abstract: No abstract text available
Text: MX65U28F64/MX65U64F32 1.8V MXSMIO SERIAL MULTI I/O FLASH MEMORY MCP WITH MULTIPLEXED, BURST MODE, PSEUDO SRAM MX65U28F64 MX65U64F32 DATASHEET P/N:PM1730 REV. 1.0, JUL. 22, 2013 1 MX65U28F64/MX65U64F32 128M-BIT/64M-BIT [x 1/x 2/x 4] 1.8V CMOS MXSMIO
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MX65U28F64/MX65U64F32
MX65U28F64
MX65U64F32
PM1730
128M-BIT/64M-BIT
128Mb/64Mb
100mA
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PDF
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av339
Abstract: ECHO schematic diagrams AO36 IS61LSCS25672-250B IS61LSCS25672-300B
Text: IS61LSCS25672 IS61LSCS51236 ISSI Σ RAM 256K X 72, 512K X 36 ADVANCE INFORMATION NOVEMBER 2002 18MB SYNCHRONOUS SRAM FEATURES • JEDEC SigmaRam pinout and package standard • Single 1.8V power supply VDD : 1.7V (min) to 1.9V (max) • Dedicated output supply voltage (VDDQ): 1.8V
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IS61LSCS25672
IS61LSCS51236
209-Ball,
IS61LSCS25672-250B
209-Ball
IS61LSCS25672-300B
IS61LSCS25672-333B
av339
ECHO schematic diagrams
AO36
IS61LSCS25672-250B
IS61LSCS25672-300B
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PDF
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IS61NSCS25672
Abstract: av339 ECHO schematic diagrams AO36 IS61NSCS25672-200B IS61NSCS25672-225B IS61NSCS51236
Text: IS61NSCS25672 IS61NSCS51236 ISSI SRAM 256K X 72, 512K X 36 ADVANCE INFORMATION JUNE 2002 18MB SYNCHRONOUS SRAM FEATURES • JEDEC SigmaRam pinout and package standard • Single 1.8V power supply VCC : 1.7V (min) to 1.9V (max) • Dedicated output supply voltage (VCCQ): 1.8V
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IS61NSCS25672
IS61NSCS51236
209-Ball,
IS61NSCS25672-200B
209-Ball
IS61NSCS25672-225B
IS61NSCS25672-250B
IS61NSCS25672-300B
IS61NSCS25672
av339
ECHO schematic diagrams
AO36
IS61NSCS25672-200B
IS61NSCS25672-225B
IS61NSCS51236
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PDF
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Untitled
Abstract: No abstract text available
Text: STATIC SRAM RAM Random Access Memory 1.8V IndustrialTemp LowVoltage LowPower TSOP LH51V256HT-85SL 256K
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LH51V256HT-85SL
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MB82DBS04163C
Abstract: MT45W4MW16B Micron 256MB NOR FLASH micron vccp MT45W4MW
Text: TN-45-16: CellularRAM Replacing Fujitsu 1.8V FCRAM Introduction Technical Note Using CellularRAM Memory to Replace Fujitsu 1.8V FCRAM Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring high speed and
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TN-45-16:
sheet--MT45W4MW16B
09005aef8213291b/Source:
09005aef8209e486
TN4514
MB82DBS04163C
MT45W4MW16B
Micron 256MB NOR FLASH
micron vccp
MT45W4MW
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SLC NAND endurance 100k
Abstract: No abstract text available
Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0
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KFM1G16Q2M-DEB6)
KFN2G16Q2M-DEB6)
KFM1G16Q2M-DEB6
KFN2G16Q2M-DEB6
63FBGA
SLC NAND endurance 100k
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PDF
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samsung 2GB Nand flash 121 pins
Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1
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KFM1G16Q2M-DEB6)
KFN2G16Q2M-DEB6)
KFM1G16Q2M-DEB6
KFN2G16Q2M-DEB6
63FBGA
samsung 2GB Nand flash 121 pins
samsung 2GB Nand flash TOGGLE
sensing nand flash memory SAMSUNG Electronics
Toggle DDR NAND flash
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PDF
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OneNAND
Abstract: 63FBGA KFG1G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 NAND Flash MLC
Text: OneNAND4G KFW4G16Q2M-DEB6 OneNAND2G(KFH2G16Q2M-DEB6) OneNAND1G(KFG1G16Q2M-DEB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB6 1.8V(1.7V~1.95V)
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KFW4G16Q2M-DEB6)
KFH2G16Q2M-DEB6)
KFG1G16Q2M-DEB6)
KFG1G16Q2M-DEB6
63FBGA
KFH2G16Q2M-DEB6
KFW4G16Q2M-DEB6
OneNAND
KFG1G16Q2M-DEB6
KFH2G16Q2M-DEB6
KFW4G16Q2M-DEB6
NAND Flash MLC
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PDF
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KFW4G16Q2M-DEB5
Abstract: OneNAND KFH2G16Q2M-DEB5 USB Flash Memory SAMSUNG 63FBGA KFG1G16Q2M-DEB5
Text: OneNAND4G KFW4G16Q2M-DEB5 OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB5 1.8V(1.7V~1.95V)
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KFW4G16Q2M-DEB5)
KFH2G16Q2M-DEB5)
KFG1G16Q2M-DEB5)
KFG1G16Q2M-DEB5
63FBGA
KFH2G16Q2M-DEB5
KFW4G16Q2M-DEB5
KFW4G16Q2M-DEB5
OneNAND
KFH2G16Q2M-DEB5
USB Flash Memory SAMSUNG
KFG1G16Q2M-DEB5
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samsung "nor flash" sensing
Abstract: 63FBGA KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6
Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.2
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KFM1G16Q2M-DEB6)
KFN2G16Q2M-DEB6)
KFM1G16Q2M-DEB6
63FBGA
KFN2G16Q2M-DEB6
80x11
KFG1G16Q2M)
samsung "nor flash" sensing
KFM1G16Q2M-DEB6
KFN2G16Q2M-DEB6
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