Si4114DY
Abstract: Si4114DY-T1-E3 Si4114DY-T1-GE3
Text: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4114DY
2002/95/EC
Si4114DY-T1-E3
Si4114DY-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4114DY
2002/95/EC
Si4114DY-T1-E3
Si4114DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si4114DY
2002/95/EC
Si4114DY-T1-E3
Si4114DY-T1-GE3
11-Mar-11
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Si4114DY
Abstract: Si4114DY-T1-E3 Si4114DY-T1-GE3
Text: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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PDF
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Si4114DY
2002/95/EC
Si4114DY-T1-E3
Si4114DY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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PDF
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Si4114DY
2002/95/EC
Si4114DY-T1-E3
Si4114DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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PDF
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Si4114DY
2002/95/EC
Si4114DY-T1-E3
Si4114DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V e VDS (V) 20 20 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) RoHS 27.5 nC APPLICATIONS
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PDF
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Si4114DY
Si4114DY-T1-E3
18-Jul-08
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Si4114DY
Abstract: Si4114DY-T1-E3
Text: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V e VDS (V) 20 20 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) RoHS 27.5 nC APPLICATIONS
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Si4114DY
Si4114DY-T1-E3
08-Apr-05
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5082-2815
Abstract: No abstract text available
Text: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS
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44475fi4
1N5711
1N5712
1N5711,
1N5712,
Figure12.
5082-2815
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5082-2815
Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
Text: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS
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0005fc
1N5711
1N5712
1N5711,
1N5712,
i712-
1n57h
1n5712
5082-2815
5082-2970
5082-2805
5082-2813
5082-2308
5082-2804
diode+hp+2835+schottky
5082-2826
5082-2997
5082-2912
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SILICON POWER CUBE
Abstract: "Silicon Power Cube" silicon power cube m50 600R M25E M5060 M2535SB POWER CUBE SBR 400V m25 diode
Text: SILICON POWER CUBE CORP 20E D • OQOQSQfl =1 f l E 5 3 e1Qa SILICON POWER CUBE rvT iïim m M 2 5 /M 5 0 SERIES 3 5A -100A POWER DIODE CIRCUITS FEATURES PARAMETER DC Output Current, 10 Max. DC Output Current, 30 (Max.) One-Cycle Surge Current (Peak) l2t for Fusing (Max.)
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M25/M50
5A-100A
2500VAC
M5060
SILICON POWER CUBE
"Silicon Power Cube"
silicon power cube m50
600R
M25E
M5060
M2535SB
POWER CUBE
SBR 400V
m25 diode
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25CC
Abstract: P4C163 P4C163L
Text: PERFORMANCE SEMI CONDUCTOR 20E D • 7 0 b 2 5 e! 7 00005b3 P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS SCRAMS T 3 ^ - a ■ s - i a FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply, 10 |iA Typical Current Common I/O Full CMOS, 6T Cell
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70b2Si?
P4C163/P4C163L
P4C163L
28-Pln
28-Pnd
-17PC
-20PC
-25PC
-35PC
25CC
P4C163
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LT1231
Abstract: LT1280CS LT1280CN LT12811 LT1281 LT1130 LT1180 LT1181 LT1280 LT1281CS
Text: LINEAR r TECHNOLOGY j CORP u n xm TECHNOLOGY 20E D • S51fl4bfl T" l e ^ G - ö S 00040^ b ■ LT1280/LT1281 A d v a n ce d Low Power 5V RS232 Dual Driver/Receiver F6 A T U R C S D C S C R IP T IO A ■ 10 m A M ax Supply Current The LT1280 and L.T1281 are the only dual RS232 driver/
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LT1280/LT1281
RS232
Power-35mW
LT1280
LT1281
16-Lead
U1281MJ
LT1281CJ
LT1231
LT1280CS
LT1280CN
LT12811
LT1130
LT1180
LT1181
LT1281CS
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62YL
Abstract: qs3125
Text: QuickSwitch Products QS3125 High-Speed CMOS Quadruple Bus Switches With Individual Active Low Enables O i lo r li Quality Semiconductor, I nc. FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Pin compatible with the 74'125 function
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QS3125
QS3125
MDSL-00039-01
62YL
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VH125
Abstract: QS3VH125
Text: m QuickSwitch Products I m c t o r Inc qs 3v h i 25 3.3V Quad Active Low Switch ,or Hot S w aP Applications HotSwitch™ advance in f o r m a t io n FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to Vcc - No DC path to Vcc or GND
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QS3VH125
QS3VH125
MDSL-00250-00
VH125
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DIODE C06 15
Abstract: c05 10 48 diode HSCH-0812 sch08 10 20e diode 20E diode DIODE C06
Text: HEWLETT-PACKARD i C MP N T S 20E D 4447504 OOOSL. ÛE HIGH RELIABILITY ZERO BIAS SCHOTTKY DETECTOR DIODE HEW LETT PACKARD S □ HSCH-0812 Generic HSCH-3486 Features H IG H T A N G E N T IA L S E N S IT IV IT Y N O B IA S R E Q U IR E D H E R M E T IC G L A S S P A C K A G E
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HSCH-3486)
SCH-0812
15CTC,
MIL-STD-750
DIODE C06 15
c05 10 48 diode
HSCH-0812
sch08
10 20e diode
20E diode
DIODE C06
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Untitled
Abstract: No abstract text available
Text: QuickSwitch Products GB S e m ic o n d u c t o r , I n c . QS3125 High-Speed CMOS Quadruple pus Switches With Individual Active Low Enables FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Pin compatible with the 74'125 function
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QS3125
QS3125
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARDn CMPNTS 2GE D B 4447SÔ4 QDQS?2b BEAM LEAD PIN DIODE fZ Z J l H E W L E T T X '& J P A C K A R D T Q HPND-4005 HPND-4005TXV T " " 0'I'-1s~ Features HIGH BREAKDOWN VOLTAGE 120V Typical LOW CAPACITANCE 0.017 pF Typical LOW RESISTANCE 4.70 Typical
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4447SÃ
HPND-4005
HPND-4005TXV
real6-17
44475A4
000S72&
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TTL 74126
Abstract: No abstract text available
Text: QuickSwitch Products Quality S e m ic o n d u c t o r , I n c . qs 3126 High-Speed CMOS Quadruple Bus Switches With Individual Active High Enables fti lo rli FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional switches connect inputs to outputs
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QS3126
MDSL-00126-02
TTL 74126
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Untitled
Abstract: No abstract text available
Text: QuickSwitch Products & q s 3v h i 25 3.3V Quad Active Low Switch f° r Hot Swap Applications HotSwitch U C T O * I nc FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to Vcc - No DC path to Vcc or GND - 5V tolerant in OFF state
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QS3VH125
VH125
200ps
MDSL-00338-01
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vh125
Abstract: No abstract text available
Text: QuickSwitch Products q s 3v h i 25 3 .3 V Quad Active Lo w Switch for Hot Sw ap Applications HotSw itch Si'w 'o' iiiitoii i\c FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to Vcc - No DC path to Vcc or GND - 5V tolerant in OFF state
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QS3VH125
VH125
200ps
MDSL-00338-01
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Untitled
Abstract: No abstract text available
Text: QuickSwitch Products SemZ qs3v h i 25 3.3V Quad Active Low Switch for Hot Swap Applications HotSwitch ductor I nc advance in f o r m a t io n FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to Vcc - No DC path to Vcc or GND
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QS3VH125
DSL-00250-00
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Untitled
Abstract: No abstract text available
Text: Technical Data CD54/74AC240/241/244 CD54/74ACT240/241/244 Advance Information Tex a s In s t r u m e n t s Data sheet acquired from Harris S em iconductor SC HS287 241 t 2 4 4 2 4 0 tA O _J 18 4 16 a 14 1A1 1A2 1 A3 2A 0 2A1 2 A3 2A 3 240 & 244 12 it 9 13
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CD54/74AC240/241/244
CD54/74ACT240/241/244
HS287
CD54/74AC/ACT240
CD54/74AC/ACT241
CD54/74AC/ACT244
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74ACT244 HARRIS
Abstract: 74ACT244 harris semiconductor
Text: Technical D a t a _ CD54/74AC240/241 /244 CD54/74ACT240/241 /244 241 A 244 240 18 1 YO 1 YO 16 1Y1 1Y1 14 1 AO 1A1 1A2 1Y2 TŸ2 12 1A3 9 2YO 2Ÿ0 7_ 2Y1 2Ÿ1 5 2Y2 2Ÿ2 2A0 2A1 2A2 3 2 A3 240 & 244 1Y3 Ο3 241 Type Features: • B uffered inputs
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CD54/74AC240/241
CD54/74ACT240/241
CD54/74AC/ACT240
CD54/74AC/ACT241
CD54/74AC/ACT244
CD54/74AC240
CD54/74AC241,
CD54/74AC244
700-M
92CM-42405
74ACT244 HARRIS
74ACT244 harris semiconductor
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