10 AMP HIGH VOLTAGE FAST-SWITCHING NPN DARLINGTON Search Results

10 AMP HIGH VOLTAGE FAST-SWITCHING NPN DARLINGTON Result Highlights (5)

Part	Manufacturer	Description
TBAW56	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23
HN1D05FE	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 400 V, 0.1 A, ES6
DF2B5M4ASL	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2)
DF2B6M4ASL	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2)
DF2B5PCT	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2)

10 AMP HIGH VOLTAGE FAST-SWITCHING NPN DARLINGTON Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NTE7232 Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A Text: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case	Original	NTE573â 201ADÂ com/specs/500to599/pdf/nte573â NTE639 214AAÂ NTE7232 NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A	PDF
MJD122T4G Abstract: TRANSISTOR MJD122 Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS	Original	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122T4G TRANSISTOR MJD122	PDF
2N6034 Abstract: 2N6038 Text: PNP 2N6034, 2N6035, 2N6036 (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com . . . designed for general−purpose amplifier and low−speed switching applications. • ESD Ratings: Machine Model, C; > 400 V	Original	2N6034, 2N6035, 2N6036 2N6038, 2N6039 2N6034 2N6038 2N6036,	PDF
Untitled Abstract: No abstract text available Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium−Power Complementary Silicon Transistors http://onsemi.com . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS	Original	BDX53B, BDX53C BDX54B, BDX54C BDX53C, O-220AB BDX53B BDX54B	PDF
Untitled Abstract: No abstract text available Text: BDW42* − NPN, BDW46, BDW47* − PNP Preferred Device Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.	Original	BDW42* BDW46, BDW47* BDW46 BDW42/BDW47 O-220AB BDW42 BDW47	PDF
369D Abstract: j11x Text: MJD112 NPN MJD117 (PNP) Preferred Device Complementary Darlington Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,	Original	MJD112 MJD117 TIP31 TIP32 369D j11x	PDF
BDW42G Abstract: 30VDC BDW42 BDW46 BDW46G BDW47 BDW47G Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.	Original	BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 O-220AB BDW42/D 30VDC BDW42 BDW46 BDW46G BDW47	PDF
2N6282 Abstract: No abstract text available Text: ON Semiconductort NPN Darlington Complementary Silicon Power Transistors 2N6282 . . . designed for general−purpose amplifier and low−frequency switching applications. 2N6284* thru • High DC Current Gain @ IC = 10 Adc — • • PNP 2N6285 hFE = 2400 Typ — 2N6282, 2N6283, 2N6284	Original	2N6282 2N6284* 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285	PDF
transistor mje802 Abstract: No abstract text available Text: ON Semiconductor PNP MJE700 Plastic Darlington Complementary Silicon Power Transistors MJE702 MJE703 NPN . . . designed for general−purpose amplifier and low−speed switching applications. MJE800 • High DC Current Gain — • • MJE802 hFE = 2000 Typ) @ IC	Original	MJE700 MJE702 MJE703 MJE800 MJE802 MJE803 transistor mje802	PDF
2N6284G Abstract: 2N6284-D 2N6287G 2N6286G 1N5825 2N6284 2N6286 2N6287 Text: 2N6284 NPN ; 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc −	Original	2N6284 2N6286, 2N6287 2N6286 2N6284/87 2N628t 2N6284/D 2N6284G 2N6284-D 2N6287G 2N6286G 1N5825 2N6284 2N6286 2N6287	PDF
tip120tip122 Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127 Text: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features	Original	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D tip120tip122 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127	PDF
100 amp npn darlington power transistors Abstract: MJD127T4G NPN Silicon Power Transistor DPAK TIP125 G 2N6040 2N6045 MJD122 MJD122T4 MJD127 TIP120 Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS	Original	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D 100 amp npn darlington power transistors MJD127T4G NPN Silicon Power Transistor DPAK TIP125 G 2N6040 2N6045 MJD122 MJD122T4 MJD127 TIP120	PDF
MJD122T4G Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127 Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves	Original	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD122T4G 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127	PDF
complementary bipolar transistor driver schematic Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN PNP M JD6036 Com plem entary Darlington Power Transistors M JD6039 DPAK For Surface Mount Applications ‘ Motorola Preferred D*vlc» Designed for general purpose power and switching such as output or driver stages	OCR Scan	JD6036 JD6039 34-2N MJD6036 complementary bipolar transistor driver schematic	PDF

MOTOROLA MJD122 Abstract: transistor 3568 darlington transistor with built-in temperature c TIP125-TIP127 1N5825 369A-13 MJD122 MJD127 MSD6100 WR-250 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD122* PNP M JD 127* Com plem entary Darlington Power Transistors DPAK For Surface Mount Applications •Motorola Preferred Dtvlct Designed for general purpose amplifier and low speed switching applications. •	OCR Scan	2N6040-2N6045 TiP120-T TIP125-TIP127 MJD122 MJD127 JD122 MOTOROLA MJD122 transistor 3568 darlington transistor with built-in temperature c 1N5825 369A-13 MJD127 MSD6100 WR-250	PDF
transistor k 3562 Abstract: T4 3560 B T4 3560 MJ0117 4AY2 T4 3560 6 TIP110-TIP117 100 amp power transistor JD117 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA liD II M JD112* PNP M JD117* Com plem entary Darlington Power Transistors OPAK For Surface Mount Applications Motoro4a Prfon*d Dtvle« Designed for general purpose power and switching such as output or driver stages	OCR Scan	JD112* JD117* TIP110-- TIP117 MJD112 MJD117 MJD112 transistor k 3562 T4 3560 B T4 3560 MJ0117 4AY2 T4 3560 6 TIP110-TIP117 100 amp power transistor JD117	PDF
NT 407 F TRANSISTOR TO 220 Abstract: NT 407 F TRANSISTOR npn transistor nt 407 f MJE700T 80 amp 30v npn darlington 10 amp npn darlington power transistors MJE701 MJE701T NPN/NT 407 F TRANSISTOR MJE703T Text: ÆàMOSPEC PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . designed for general-purpose and low-speed switching application. MAXIMUM RATINGS Sym bol MJE700T MJE701T MJE800T MJE801T MJE702T MJE703T MJE802T MJE803T Unit Collector-Emitter Voltage	OCR Scan	MJE700T MJE701T MJE800T MJE801T MJE702T MJE703T MJE802T MJE803T NT 407 F TRANSISTOR TO 220 NT 407 F TRANSISTOR npn transistor nt 407 f 80 amp 30v npn darlington 10 amp npn darlington power transistors MJE701 NPN/NT 407 F TRANSISTOR	PDF
bipolar power transistor Abstract: BDW42 BDW47 motorola darlington power transistor 10 amp npn power transistors with low saturation voltage bdw41 BDW45 1N5825 transistor 3213 BDW40 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Com plem entary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW 47* • • High DC Current Gain - hpE = 2500 typ. @ lc = 5.0 Adc. Collector Emitter Sustaining Voltage @ 30 mAdc:	OCR Scan	BDW46 BDW42/BDW47 O-220AB BDW46 BDW42 BDW47 bipolar power transistor motorola darlington power transistor 10 amp npn power transistors with low saturation voltage bdw41 BDW45 1N5825 transistor 3213 BDW40	PDF
MJ10009 Abstract: No abstract text available Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA M J 10009* D esigner’s Data Sheet SW ITCHMODE Series NPN Silico n Power Darlington TVansistor with B ase-Em itter Speedup Diode 20 AM PERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor Is designed for high-voltage, high-speed,	OCR Scan	MJ10009 MJ10009)	PDF
transistor mj10005 Abstract: 440 motorola Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J10005* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode "Motorola Prfrr*d D«vic« 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS	OCR Scan	J10005* MJ10005 MJ10005. MJ100 transistor mj10005 440 motorola	PDF
2N6096 Abstract: 2N6055 2N6055 MOTOROLA N6056 2N6056 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6055 2 N6056* Darlington Com plem entary Silicon Power Transistors "Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. • • • • DARLINGTON 8 AMPERE	OCR Scan	2N6055 2N6056 N6056* 2N6055 2N6056 2N6096 2N6055 MOTOROLA N6056	PDF
TRANSISTOR bd 147 Abstract: bdw 36 w41b BDW 38 npn darlington transistor 200 watts Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Com plem entary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47* • • High DC Current Gain - hFE = 2500 typ. @ lc = 5.0 Adc.	OCR Scan	BDW46 BDW42/BDW47 O-220AB BDW47 BDW45, TRANSISTOR bd 147 bdw 36 w41b BDW 38 npn darlington transistor 200 watts	PDF
transistor K 3565 Abstract: JD127 transistor 45 f 122 2N6040-2N6045 MOTOROLA MJD122 jd122 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD122* Com plem entary Darlington Power Transistors PNP M JD 127* DPAK For Surface Mount Applications *Motoro<a Pr«ftffd Device Designed for general purpose amplifier and low speed switching applications. SILICON	OCR Scan	2N6040-2N6045 TIP120-TIP122 TIP125-- TIP127 MJD122 MJD127 transistor K 3565 JD127 transistor 45 f 122 MOTOROLA MJD122 jd122	PDF
MJ10007 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007’ Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode •Motorola Pr«f*rr«d Otvlet 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS	OCR Scan	MJ10007' MJ10007	PDF

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10 AMP HIGH VOLTAGE FAST-SWITCHING NPN DARLINGTON Search Results

10 AMP HIGH VOLTAGE FAST-SWITCHING NPN DARLINGTON Result Highlights (5)

10 AMP HIGH VOLTAGE FAST-SWITCHING NPN DARLINGTON Datasheets Context Search

NTE7232

MJD122T4G

2N6034

Untitled

Untitled

369D

BDW42G

2N6282

transistor mje802

2N6284G

tip120tip122

100 amp npn darlington power transistors

MJD122T4G

complementary bipolar transistor driver schematic

MOTOROLA MJD122

transistor k 3562

NT 407 F TRANSISTOR TO 220

bipolar power transistor

MJ10009

transistor mj10005

2N6096

TRANSISTOR bd 147

transistor K 3565

MJ10007