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    10 DIODE Search Results

    10 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    10 DIODE Price and Stock

    Struthers-Dunn W134MPCX-10

    Mercury Reed Relay With Clamping DIode - DPDT - 5V 45 Ohms Coil - 560mW - 2A Carry Current.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com W134MPCX-10 63
    • 1 $129.92
    • 10 $123.42
    • 100 $119.64
    • 1000 $119.64
    • 10000 $119.64
    Buy Now

    Phoenix Contact SAC-3P-10 0-PVC/A-1L-Z

    Sensor/actuator cable - 3-position - PVC - black RAL 9005 - free cable end - on Valve connector A - with 1 LED - connected with Z diode - cable length: 10 m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SAC-3P-10 0-PVC/A-1L-Z 21
    • 1 $26.13
    • 10 $25.73
    • 100 $21.83
    • 1000 $21.04
    • 10000 $21.04
    Buy Now

    Phoenix Contact SAC-3P-10 0-PUR/A-1L-Z

    Sensor/actuator cable - 3-position - PUR halogen-free - black-gray RAL 7021 - free cable end - on Valve connector A - with 1 LED - connected with Z diode - cable length: 10 m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SAC-3P-10 0-PUR/A-1L-Z 15
    • 1 $51.25
    • 10 $46.99
    • 100 $40.93
    • 1000 $40.52
    • 10000 $40.52
    Buy Now

    Diotec Semiconductor AG BZW04-10

    TVS Diode - DO-15 - 10.2V - 400W - Unidirectional
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BZW04-10
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0667
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    Diotec Semiconductor AG TGL34-10

    TVS Diode - MiniMelf - 8.1V - 150W - Unidirectional
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TGL34-10
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0409
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    10 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 肖特基二极管(SOT-23 SCHOTTKY BARRIER DIODES) 型号 TYPE FHBAS40 FHBAS40-04 FHBAS40-06 FHBAS70 FHBAS70-04 FHBAT54 FHBAT54A V(BR)R Min Vdc IR µA 40 10 40 10 40 10 70 10 70 10 30 10 30 10 IF mA Min 200 200 VF Vdc mA Max V IF 0.5 30 0.5


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    PDF OT-23 OT-23 FHBAS40 FHBAS40-04 FHBAS40-06 FHBAS70 FHBAS70-04 FHBAT54 FHBAT54A FHBAT54C

    AS01

    Abstract: AU01 AU02 ES01 EU01 EU02 FMU-14S FMU-24S FMU-34S
    Text: Part Number IFSM A Tj (°C) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20 20 0.2 55 15 –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20


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    PDF 100mA/100mA 100mA/200mA AS01 AU01 AU02 ES01 EU01 EU02 FMU-14S FMU-24S FMU-34S

    FMU-21S

    Abstract: FMUG2Y
    Text: Package I F AV (A) Part Number IFSM (A) Tj (°C) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot –40 to +150 0.9 1.2 10 300 100 0.2 10/10 0.08 10/20 17 0.3 57 30 –40 to +150 0.95 1.5 10 300 100 0.2 10/10 0.08 10/20 15 0.4 58 RU 3YX 2.0 50 –40 to +150


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    PDF 100mA/100mA 100mA/200mA FMU-21S FMUG2Y

    FMUG2Y

    Abstract: FMU-1 FMU-21S FMUP-1056 FMUP-1106 FMUP-2056
    Text: Package I F AV (A) Part Number IFSM (A) Tj (°C) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot –40 to +150 0.9 1.2 10 300 100 0.2 10/10 0.08 10/20 17 0.3 57 30 –40 to +150 0.95 1.5 10 300 100 0.2 10/10 0.08 10/20 15 0.4 58 RU 3YX 2.0 50 –40 to +150


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    PDF 100mA/100mA 100mA/200mA FMUG2Y FMU-1 FMU-21S FMUP-1056 FMUP-1106 FMUP-2056

    Untitled

    Abstract: No abstract text available
    Text: MBRJ10L60CTG Product Preview SWITCHMODE Power Rectifier 60 V, 10 A http://onsemi.com Features and Benefits • • • • • • SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 60 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 10 A Total 5 A Per Diode Leg


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    PDF MBRJ10L60CTG MBRJ10L60CT/D

    si4916

    Abstract: No abstract text available
    Text: Si4916DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


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    PDF Si4916DY Si4916DY-T1-E3 Si4916DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4916

    Untitled

    Abstract: No abstract text available
    Text: SWITCHES P IN DIODE 50Ω SPDT/SP4T TTL Drivers 10 to 3000 MHz ZSDR TOSW INSERTION LOSS dB FREQUENCY (MHz) MODEL NO. TOSW-230 TOSW-425 ZSDR-230 ZSDR-425 low-band lw Max. upper band U Max. TYPE fL - fU Typ. SPDT SP4T 10-3000 10-2500 1.3 1.1 1.9 1.7


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    PDF OSW-230 OSW-425 ZSDR-230 ZSDR-425 CCC127 GGG126 50-OHM PSW-1211 OSW-425

    MIL-R-5757

    Abstract: MS27247-1 MS27245 27245 MS27247
    Text: CII Low Signal Relays Double Pole, Electrically Held, 10 Amps and Less Product Facts • Hermetically sealed ■ Up to 10 amps switching ■ ■ ■ High shock & vibration ratings Optional terminals & mounting styles DC, AC & diode-suppressed coils Electrical Characteristics


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    PDF MIL-R-5757/23 MIL-R-5757 MS27247-1 MS27245 27245 MS27247

    f827

    Abstract: 54F827 54F827DMQB 54F827FMQB 54F827LMQB AM29827 M827
    Text: MILITARY DATA SHEET Original Creation Date: 05/10/96 Last Update Date: 07/30/96 Last Major Revision Date: 05/10/96 MN54F827-X REV 1A0 10-BIT BUFFER/LINE DRIVER General Description The F827 10-bit bus buffer provides high performance bus interface buffering for wide


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    PDF MN54F827-X 10-BIT AM29827. 54F827 54F827DMQB 54F827FMQB 54F827LMQB MIL-STD-883, f827 54F827 54F827DMQB 54F827FMQB 54F827LMQB AM29827 M827

    NX8563

    Abstract: NX8563-AZ NX8563LB NX8563LF laser diode 1550 nm 160832
    Text: NEC's CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS 10 mW MIN NX8563 SERIES FEATURES DESCRIPTION • OUTPUT POWER: Pf = 10 mW MIN NEC's NX8563 Series are a 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode


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    PDF NX8563 NX8563 14-PIN NX8563-AZ NX8563LB NX8563LF laser diode 1550 nm 160832

    OL6206N-100-AP15

    Abstract: No abstract text available
    Text: JOG-00966 Optical Components OL6206N-100-AP15 Rev.3 [10. 2008 ] Preliminary 1625nm+/-15nm 10 to 40 C ,100mW Pulsed MQW Laser Diode Uncooled DIL Module with SMF. 1. DESCRIPTION OL6206N-100-AP15 is a 1625nm Laser Diode in DIL package with SMF. 2. FEATURES


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    PDF JOG-00966 OL6206N-100-AP15 1625nm /-15nm 100mW OL6206N-100-AP15 100mW 14-pin

    Untitled

    Abstract: No abstract text available
    Text: DGS 10-022AS DGS 10-025AS IDC = 9A VRRM = 220/250 V trr = 13 ns Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM V V 220 250 220 250 Type A C TO-263 AB A DGS 10-022AS DGS 10-025AS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions


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    PDF 10-022AS 10-025AS O-263

    Untitled

    Abstract: No abstract text available
    Text: RKP413KS Composite Pin Diode for Antenna Switching REJ03G1613-0100 Rev.1.00 Jan 10, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max @IF = 10 mA, f = 100 MHz)


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    PDF RKP413KS REJ03G1613-0100 MFP12) MFP12 PUSF0012ZA-A HVL147M REJ03G1613-0100

    Untitled

    Abstract: No abstract text available
    Text: Precision Digital Step Attenuator 50Ω TTL Control, Pin Diode Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 125°C Input Power 15 dBm DC Voltage 5.5 V TTL 5.5V ZFAT-4816 10 to 1000 MHz Features • wideband, 10 to 1000 MHz


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    PDF ZFAT-4816 SSS173 ZFAT-4816

    RJU4351SDPE

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU4351SDPE 430V - 10A - Single Diode Ultra Fast Recovery Diode R07DS1063EJ0200 Rev.2.00 Apr 26, 2013 Features • Ultra fast reverse recovery time: trr = 23 ns typ. at IF = 10 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.6 V typ. (at IF = 10 A)


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    PDF RJU4351SDPE R07DS1063EJ0200 PRSS0004AE-B RJU4351SDPE

    RJU4351SDPE

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU4351SDPE 430V - 10A - Single Diode Ultra Fast Recovery Diode R07DS1063EJ0100 Rev.1.00 Mar 05, 2013 Features • Ultra fast reverse recovery time: trr = 23 ns typ. at IF = 10 A, di/dt = 100 A/s  Low forward voltage: VF = 1.6 V typ. (at IF = 10 A)


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    PDF RJU4351SDPE R07DS1063EJ0100 PRSS0004AE-B RJU4351SDPE

    Untitled

    Abstract: No abstract text available
    Text: PQ-60 Analog Diode Phase Shifters Features • Octave bands up to 18 GHz • Fast Phase responce as low as 10 nS • RF power operation 10 mW peak/CW, RF power survival 100 mW peak/CW • Bias connection using pin or connector options • Custom configurations available


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    PDF PQ-60 MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: PQ-59 Analog Diode Phase Shifters Features • Octave bands up to 18 GHz • Fast Phase responce as low as 10 nS • RF power operation 10 mW peak/CW, RF power survival 100 mW peak/CW • Bias connection using pin or connector options • Custom configurations available


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    PDF PQ-59 MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: 2SK3518-01MR FUJI POWER MOSFET 2SK3518-01MR FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings Features 1 10 Applications o Zth ch-c [ C/W] 10 -1 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 10


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    PDF 2SK3518-01MR O-220F

    DSEE8-08CC

    Abstract: 10P40
    Text: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine


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    PDF 8-08CC ISOPLUS220TM 220LVTM 10P400PJ DS99053 DSEE8-08CC ISOPLUS220LV DSEE8-08CC 10P40

    10-PIN

    Abstract: 1N5770 DIODE Sp marking code marking CODE MX
    Text: 5768A Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as


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    PDF 10-PIN 1N5770 1N5770 DIODE Sp marking code marking CODE MX

    Untitled

    Abstract: No abstract text available
    Text: 10 D L2 C48 A, 10 FL2 C48A, U10 D L2 C48 A, U10 FL2 C48A TO SHIBA TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C48A, 10FL2C48A, U10DL2C48A, U10FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. •


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    PDF 10DL2C48A, 10FL2C48A, U10DL2C48A, U10FL2C48A 10FL2C48A 12-10D1A 12-10D2A

    NE5020N

    Abstract: 1n4148 ITT NE5020 NE5020F DAC 8 bits 0-10v
    Text: Philips Semiconductors Linear Products Product specification 10-B¡t fiP-compatible D/A converter DESCRIPTION NE5020 PIN CONFIGURATION The NE5020 is a microprocessor-compatible monolithic 10-bit digital-to-analog converter subsystem. This device offers 10-bit


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    PDF 10-Bit NE5020 9023V. 711005b NE5020N 1n4148 ITT NE5020F DAC 8 bits 0-10v

    oc44

    Abstract: IN2979B IN2976B NE001 in2970 IN2970B 1N2981B 1n2989b IN3015b 1N2970
    Text: 1N2970B thru 1N3015B 10 WATT SILICON ZENER DIODES Available in Voltages from 6.8 thru 200 V POLARITY: FEATURES: 1N2970 -1N 3015: Std. Polarity is anode to stud. Reverse polarity indicated by suffix "R". • ZENER VOLTAGE 6 .8 TO 200 V • VOLTAGE TOLERANCES; ± 5%, ± 10%, ± 20%


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    PDF 1N2970B 1N3015B 1N2970 -1N3015: 1N3005B 1N3006B 1N3007B 1N3008B 1N3009B 1N3010B oc44 IN2979B IN2976B NE001 in2970 IN2970B 1N2981B 1n2989b IN3015b