Transistors K 903
Abstract: PDTA144ES PDTA114ES PDTA124ES PDTC114ES PDTC124ES "Small-signal Transistors Selection" PDTA114TS PDTA143ES PDTC114TS
Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN RESISTOR-EQUIPPED TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IO max. (mA) Ptot max. (mW) hFE min. hFE max. INPUT RES. (KΩ) RES. RATIO PNP COMPL. PAGE >30 10
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PDTA114ES
PDTC114ES
PDTC114TS
PDTA114TS
PDTC124ES
PDTA124ES
PDTC143ES
PDTA143ES
PDTC144ES
PDTA144ES
Transistors K 903
PDTA144ES
PDTA114ES
PDTA124ES
PDTC114ES
PDTC124ES
"Small-signal Transistors Selection"
PDTA114TS
PDTA143ES
PDTC114TS
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concave
Abstract: CNZ 1E 4K
Text: NETWORKS TECHNOLOGY OF TOMORROW JUMPER NETWORKS ZERO OHM CNZ STRUCTURE 1 2 3 4 5 6 Ceramic substrate Ag / Pd Silver element Glass Ni / Sn - Pb Sn:Pb = 90:10 Concave: Epoxy resin overcoating Convex: Glass overcoating Convex (K-type) IDENTIFICATION Concave (4 res.)
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D-25578
concave
CNZ 1E 4K
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD MBR10100C DIODE SCH OT T K Y BARRI ER RECT I FI ER ̈ FEAT U RES * 10 amps total 5 amps per diode leg * Guard ring for transient protection * Low forward voltage drop * High surge capability * Low power loss/High efficiency ̈
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MBR10100C
MBR10100CL-TA3-T
MBR10100CG-TA3-T
MBR10100CL-TF3-T
MBR10100CG-TF3-T
MBR10100CL-TQ2-T
MBR10100CG-TQ2-T
MBR10100CL-TQ2-R
MBR10100CG-TQ2-R
O-220
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD MBR20100C DIODE SCH OT T K Y BARRI ER RECT I FI ER ̈ FEAT U RES * 20 Amps Total 10 Amps Per Diode Leg * Guard Ring for Transient Protection * Low Forward Voltage Drop * High Surge Capability * Low Power Loss/High Efficiency
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MBR20100C
MBR20100CL-TA3-T
MBR20100CG-TA3-T
MBR20100CL-TF3-T
MBR20100CG-TF3-T
MBR20100CL-TQ2-R
MBR20100CG-TQ2-R
MBR20100CL-TQ2-T
MBR20100CG-TQ2-T
O-220
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Untitled
Abstract: No abstract text available
Text: UM7000 / UM7100 / UM7200 HIGH POWER PIN DIODES TM RoHS Compliant Versions Available K EY FEAT U RES DESCRIPT ION • Voltage ratings to 1000V UM7000 • Average power dissipation to 10 W Series resistance as low as 0.25 Ω Carrier lifetime greater than 2.5 µs
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UM7000
UM7100
UM7200
UM7000)
UM7200
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Untitled
Abstract: No abstract text available
Text: K Hz DC MA RES XI IST MU A M NC (O E hm CU s) RR MA E N XI T MU R M ATI (A NG m ps ) TE S FR T EQ UE NC Y IN D (µ UCT H) A ± 2 NC 0% E Shielded Surface Mount Inductors PA R NU T MB ER Series SPD62 SERIES SPD62 1.2 2.4 3.5 4.7 6.8 10 12 15 18 22 27 33
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SPD62
SPD62-122M
SPD62-242M
SPD62-352M
SPD62-472M
SPD62-682M
SPD62-103M
SPD62-123M
SPD62-153M
SPD62-183M
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Untitled
Abstract: No abstract text available
Text: K Hz DC MA RES XI IST MU A M NC (O E hm CU s) RR MA E N XI T MU R M ATI (A NG m ps ) TE S FR T EQ UE NC Y IN D (µ UCT H) A ± 2 NC 0% E Shielded Surface Mount Inductors PA R NU T MB ER Series SPD62 SERIES SPD62 1.2 2.4 3.5 4.7 6.8 10 12 15 18 22 27 33
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SPD62
SPD62-122M
SPD62-242M
SPD62-352M
SPD62-472M
SPD62-682M
SPD62-103M
SPD62-123M
SPD62-153M
SPD62-183M
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Untitled
Abstract: No abstract text available
Text: y k i y j x i y k i CMOS Low Cost 10 B it M u ltip ly in g D /A C o n verter - Featu res ♦ 10 Bit Resolution The AD7533 is a low cost CM O S 4-quadrant m u ltip ly ing d ig ital-to-analog converter DAC . An advanced
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AD7533
AD7533
464mm)
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n1l3N
Abstract: No abstract text available
Text: DATA SH EET NEC SILICON TRANSISTOR ELECTRON DEVICE G N1L3N MEDIUM S P EED SW ITCHING R ESISTO R BUILT-IN TY PE PNP TRAN SISTOR FEA TU RES PACKAGE DIMENSIONS • Resistors B u ilt-in T Y P E in m illim eters 9 C R t = 4 . 7 k 12 R 2 = 10 k f i *2 • - Ï O E
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Untitled
Abstract: No abstract text available
Text: What HEWLETT 1"UM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC/PPA 2023 S eries F eatu res D escription Pin C onfiguration • F requency Range: 10 to 2000 MHz The 2023 Series is a mediumpower, wideband thin-film bipolar
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PlanarP70
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Untitled
Abstract: No abstract text available
Text: PRELIM INARY TTL BICMOS STATIC RAM S Y N E R G Y SEMICONDUCTOR 64 K 1 6 K X 4 -B IT 1 ' DESCRIPTIO N FEA TU RES • ■ ■ ■ ■ Address access time, u a : 7/10/12ns max. Chip select access time, tACs: 4/6/7ns max. Popular 16K x 4 with common I/O organization
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7/10/12ns
200mA
24-pin,
300-mil
SY61B98-7
SY61B98-10
SY61B98-12
61B98
536-bit
lG013fll
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LT 7247
Abstract: No abstract text available
Text: W tiiilHEWLETT m L t'ia P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/ÜTC 2027 S eries F eatu res D escription Pin Configuration • Frequency Range: 10 to 2000 MHz The 2027 Series is a w ideband, r.wo-stago thin-film bip o lar RF
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EC 9410 -F
Abstract: EM 257 18672
Text: T h a l HEWLETT wL'KM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2022 S eries F ea tu res D escription Pin C onfiguration • F re q u e n c y R ange: 10 to 2 0 0 0 MHz T he 2022 Series is a high-pow er
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BB22
Abstract: C682 C68207 H9005
Text: , F E DWG. NO. *10-0X2 ZONE REV. O P CENTER BUMP RES CREEN YELLO W X D cn B D en W INGS AND SPECIFICATIONS A K THE SO LE PROPERTY DF I/O INTERCONNECT IN C , U S A . M -" SMALL NOT K REPRODUCED. CORD • I F USED IN f ïf f H M K R VITHOUT T IE PRIOR VRÌTTEN CUISENT OF 1/0 INTERCONNECT U S . OR ITS A T T U A T O SUtSH IIARlES.
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GLX-12I-X10-OX2
GLT-121-X10-OX2
BB22
C682
C68207
H9005
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RT6105
Abstract: LATTICE plsi architecture 3000 SERIES speed isp synario LATTICE plsi architecture 3000 SERIES GAL22V10B use circuit isplsi device layout
Text: Lattice G AL22V10/883 High Performance E2CMOS PLD Generic Array Logic , ! Semiconductor i •Corporation F U N C T IO N A L B L O C K D IA G R A M FEA TU RES • HIGH PERFORMANCE E!CMOS TECHNOLOG Y — 10 ns Maxim um Propagation Delay — Fmax = 1 6 6 MHz
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AL22V10/883
22V10
1-800-LATTICE
pDS2102M-PC1
pDS2102M-SN1
102M-PC2
pDS1102M-SN1
pDS3302M-PC2
pDS1120M-PC1
RT6105
LATTICE plsi architecture 3000 SERIES speed
isp synario
LATTICE plsi architecture 3000 SERIES
GAL22V10B use circuit
isplsi device layout
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Untitled
Abstract: No abstract text available
Text: T hn% H EW LETT W LZM P A C K A R D 400 V/10 Ohm, General Purpose, 1 Form A, Solid State Relay Technical Data HSSR-8400 F eatu res D escrip tion • Compact Solid-State B idirectional Sw itch • Normally-Off Single-Pole Relay Function 1 Form-A • 400 V Output W ithstand
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HSSR-8400
16-kV
MILSTD-883,
HSSR-8400
5965-3573E
5968-2541E
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AD7530 ANALOG DEVICES
Abstract: AD7530 AD7530JCWE AD7530JD AD7530JN AD7530KCWE AD7530KN AD7530LCWE AD7530LN AD7531
Text: / k M X I Æ CMOS 10 a n d 12 B it M u ltip ly in g D/A C onverters _ F e atu res T h e A D 7 53 0 a n d AD7531 are low cost CM O S m ultiply ing dig ita l-to -a n aio g converters DAC w ith 10 and 12 bit resolution respectively. Both DACs operate from a
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AD7530
AD7531
10ppm/Â
AD7531.
16-lead
AD7530 ANALOG DEVICES
AD7530JCWE
AD7530JD
AD7530JN
AD7530KCWE
AD7530KN
AD7530LCWE
AD7530LN
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Untitled
Abstract: No abstract text available
Text: FEATU RES & • 5 0 - 5 0 0 MHz ■ Non-Reflective ■ TTL Driver MODEL NO. DS0778 PIN Diode SP4T ■ Surface Mount Package RF2 .XXX = .01 0 K » </> > 24 RF3 13 A RF1 1 RF4 12 A A A oooo o 10 21 CONT2Ï R F CO M 6 16 19 17 2 3 4 5 7 8 0 1011 1415 22 23 CONT3
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DS0778
AT-12
z/150
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Untitled
Abstract: No abstract text available
Text: ¿ 7/ T H B T x x x 11D Application Specific Discretes a qn TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE FEA TU RES • BIDIRECTIONAL CROW BAR PROTECTION BETW EEN TIP AND GND, RING AND GND AND BETW EEN TIP AND RING. ■ PEA K PU LSE C U R R EN T : lpp=30Afor 10/1000|j.s surge.
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30Afor
150mA.
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Untitled
Abstract: No abstract text available
Text: a PRELIMINARY / t k CALIFORNIA MICRO DEVICES ►► ► ► ► PDN 27A90/91 9/10 CH A N N EL LIVE ESD PRO TECTIO N ARRAY Fe atu res • • Pin A ssig n m e n ts Live ESD protection up to 10KV EFI noise filter for very high frequencies icm I an G N D 2 C D Z IN I
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27A90/91
PDN27A90/T
PDN27A91/T
PDN27A90/R
PDN27A91/R
PDN27A90
PDN27A91
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7527B
Abstract: No abstract text available
Text: CMOS 10-Bit Systems DAC AD7527 ANALOG DEVICES FEATU RES , Double Buffer Latches/Counter Data Readback 8 - and 16-Bit Bus Compatible ± 1 L S B max Gain Error ( " G " version) Easy Calibration Features Latch Proof (No Schottky Protection Required) A D 7 5 2 7 F U N C T IO N A L B LO C K D IA G R A M
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16-Bit
4-20mA
10-Bit
AD7527
7527B
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PCK2001
Abstract: PCK2001M
Text: Philips Sem iconductors Product specification 66-150M H z l2C M obile 1:10 SD R A M C lo ck D river PCK 2001M FEA TU RES P C K 2001M D ES C R IP TIO N PC K 2001M • R e d u c e d p in c o u n t v e rs io n o f P C K2001 T h e P C K 2 0 0 1 M is a 1—10 fa n o u t b u ffe r use d fo r S D R A M c lo c k
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66-150MHz
PCK2001M
PCK2001
PCK2001
48-pin
66MHz,
100MHz
133MHz
PCK2001M
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2709759
Abstract: 80C188XL20
Text: - I I [p [^@ B [L D T in tb l« 80C188XL20, 16, 12, 10 16-BIT HIGH INTEGRATION EMBEDDED PROCESSOR • Low Power, Full Static Version of the 80C188 ■ D ire c t A d d res sin g C a p a b ility to 1 M b yte M e m o ry and 64 K b y te I/O ■ Operation Modes Include:
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80C188XL20,
16-BIT
80C188
80C188
80C188XL
2709759
80C188XL20
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Untitled
Abstract: No abstract text available
Text: ' ' lo c k W o rk s 1M i 4 CLOCK 3 V 10 E L 1 S DISTR IBUTION • VU IO El. 1 5 FEATURES • 5 0 p s o u tp u t-to -o u tp u t sk ew ■ S y n c h ro n o u s e n a b le /d is a b le ■ M u ltip le x e d c lo c k in p u t ■ 75 K D in tern al in p u t p u ll-d o w n res is to rs
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SY10/100EL15
100EL
SY10EL15ZC
SY10EL15ZCTR
SY100EL15ZC
SY100EL15ZCTR
Z16-2
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