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    10 MARKING CODE DUAL TRANSISTOR SOT563 Search Results

    10 MARKING CODE DUAL TRANSISTOR SOT563 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    10 MARKING CODE DUAL TRANSISTOR SOT563 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT89 transistor marking

    Abstract: SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter
    Text: PRODUCT announcement New Tiny Packages High Voltage Small Signal Transistors SOT-563 SOT-523 Dual Single SOT-23 SOT-89 SOT-223 SOT-228 Single Single Single Dual features • VCEO = 160V NPN , 150V (PNP) • IC = 600mA (NPN), 500mA (PNP) • Ideal for high voltage amplifier applications


    Original     		PDF OT-563 OT-523 OT-23 OT-89 OT-223 OT-228 600mA 500mA CMLT5551HC OT-563) SOT89 transistor marking SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter

    MARKING 67 SOT89

    Abstract: transistor 5551 sot-89 marking code transistor sot code amplifier marking code D amplifier marking code a transistor sot sot-223 code marking 5551 datasheet SOT89 MARKING CODE
    Text: PRODUCT announcement Higher Current, High Voltage NPN Transistors SOT-228 SOT-223 SOT-89 SOT-23 SOT-563 Dual Single Single Single Single Sample Devices features • Higher current than standard 5551 available 1.0 Amp vs. standard current 600mA • Single and Dual configurations


    Original     		PDF OT-228 OT-223 OT-89 OT-23 OT-563 600mA) 5551HC 600mA MARKING 67 SOT89 transistor 5551 sot-89 marking code transistor sot code amplifier marking code D amplifier marking code a transistor sot sot-223 code marking 5551 datasheet SOT89 MARKING CODE

    marking L07

    Abstract: CMLT2907A
    Text: CMLT2907A SURFACE MOUNT DUAL PNP SILICON TRANSISTOR SOT-563 CASE MAXIMUM RATINGS: TA=25°C SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature


    Original     		PDF CMLT2907A OT-563 CMLT2907A 100MHz 150mA, marking L07

    Untitled

    Abstract: No abstract text available
    Text: CMLT5088EM SURFACE MOUNT SILICON DUAL, MATCHED NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5088EM consists of two individual, isolated 5088E NPN silicon transistors with matched VBE ON characteristics. This device is designed for applications requiring high


    Original     		PDF CMLT5088EM 5088E OT-563 12-February

    Untitled

    Abstract: No abstract text available
    Text: CMLT5087EM SURFACE MOUNT SILICON DUAL, MATCHED PNP TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5087EM consists of two individual, isolated 5087E PNP silicon transistors with matched VBE ON characteristics. This device is designed for applications requiring high


    Original     		PDF CMLT5087EM 5087E OT-563 12-February

    Untitled

    Abstract: No abstract text available
    Text: CMLT8099M SURFACE MOUNT SILICON DUAL, MATCHED NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT8099M consists of two individual, isolated 8099 NPN silicon transistors with matched VBE ON characteristics. This device is manufactured by the epitaxial planar


    Original     		PDF CMLT8099M OT-563 12-February

    Untitled

    Abstract: No abstract text available
    Text: CMLT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON DUAL PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface


    Original     		PDF CMLT2907A OT-563 100MHz 150mA,

    dual npn 500ma

    Abstract: npn switching transistor 60v CMLT2222A MARKING CODE l22
    Text: Central CMLT2222A SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2222A type is a dual NPN small signal switching transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount


    Original     		PDF CMLT2222A OT-563 x10-4 100mA, 150mA, dual npn 500ma npn switching transistor 60v CMLT2222A MARKING CODE l22

    CMLDM7005R

    Abstract: No abstract text available
    Text: CMLDM7005 CMLDM7005R SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver


    Original     		PDF CMLDM7005 CMLDM7005R CMLDM7005. CMLDM7005: CMLDM7005R: OT-563 350mW 500mA

    Untitled

    Abstract: No abstract text available
    Text: CMLT2207G SURFACE MOUNT SILICON DUAL, COMPLEMENTARY TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2207G consists of one isolated 2N2222A NPN transistor and one complementary isolated 2N2907A PNP transistor, manufactured by the epitaxial planar process and


    Original     		PDF CMLT2207G 2N2222A 2N2907A OT-563 Res30V, 150mA,

    Untitled

    Abstract: No abstract text available
    Text: CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


    Original     		PDF CMLDM8005 350mW OT-563 200mA 200mA,

    Untitled

    Abstract: No abstract text available
    Text: CMLDM7005 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7005 consists of dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


    Original     		PDF CMLDM7005 OT-563 350mW 500mA 200mA,

    Untitled

    Abstract: No abstract text available
    Text: CMLDM7005 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7005 consists of dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


    Original     		PDF CMLDM7005 OT-563 350mW 500mA 200mA,

    Untitled

    Abstract: No abstract text available
    Text: CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


    Original     		PDF CMLDM8005 350mW OT-563 200mA 200mA,

    7c3 transistor

    Abstract: No abstract text available
    Text: CMLDM3737 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3737 consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


    Original     		PDF CMLDM3737 OT-563 28-October 540mA, 7c3 transistor

    Untitled

    Abstract: No abstract text available
    Text: CMLDM7005 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7005 consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


    Original     		PDF CMLDM7005 350mW OT-563 CMLDM8005 500mA 400mA

    VDS16V

    Abstract: 7c3 transistor 10 marking code dual transistor sot563
    Text: CMLDM3737 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3737 consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


    Original     		PDF CMLDM3737 350mW OT-563 CMLDM5757 28-October 540mA, VDS16V 7c3 transistor 10 marking code dual transistor sot563

    Untitled

    Abstract: No abstract text available
    Text: CMLDM3737 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3737 consists of dual silicon N-Channel enhancement-mode MOSFETs designed for high speed pulsed amplifier


    Original     		PDF CMLDM3737 OT-563 28-January 500mA 540mA,

    CMLDM8005

    Abstract: No abstract text available
    Text: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


    Original     		PDF CMLDM8005 350mW OT-563 CMLDM7005 200mA

    Untitled

    Abstract: No abstract text available
    Text: CMLDM7005 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7005 consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


    Original     		PDF CMLDM7005 350mW OT-563 CMLDM8005 500mA 400mA

    cc8 transistor

    Abstract: CMLDM8005
    Text: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


    Original     		PDF CMLDM8005 350mW OT-563 CMLDM7005 200mA cc8 transistor

    Untitled

    Abstract: No abstract text available
    Text: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


    Original     		PDF CMLDM8005 350mW OT-563 200mA 200mA,

    CMLT8099M

    Abstract: No abstract text available
    Text: Central CMLT8099M TM Semiconductor Corp. SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT8099M consists of two individual, isolated 8099 NPN silicon transistors with matched VBE ON characteristics. This PICOminiTM device is manufactured by the epitaxial


    Original     		PDF CMLT8099M OT-563 OT-563 CMLT8099M

    Untitled

    Abstract: No abstract text available
    Text: Central CMLT2207 Semiconductor Corp. SURFACE MOUNT PlCOmini™ DUAL,COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The Central Semiconductor CMLT2207 con­ sists of one 2N2222A NPN silicon transistor and one individual isolated complementary 2N2907A PNP silicon transistor, manufactured


    OCR Scan     		PDF CMLT2207 2N2222A 2N2907A OT-563 X10-4 X10-4 OT-563 13-November