SMD Diode S140
Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
Text: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in
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1812S380
1812S260
1812S220
00E-08
00E-07
00E-06
00E-05
00E-04
00E-03
00E-02
SMD Diode S140
transistor a 949
100 Amp current 1300 volt diode
DIODE SMD S140
JMV1206S450T551
250 B 340 smd Transistor
JMV0603S300T101
JMV0805S180T351
JMV0402S5R6T301
JMV1812
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100 Amp current 1000 volt diode
Abstract: 1000 Amp current diode 100 Amp current 500 volt diode 200 Amp current 1000 volt diode MD550 50 Amp current 100 volt diode MDL25800 md356 5701 diode MD358
Text: MD/MDL 25000C/A Series - 25 Amp MD/MDL 35000C/A Series - 35 Amp MD/MDL 50000C/A Series - 50 Amp Rectifier Automotive Diode Data Sheet Coloured ring denotes cathode Features Oxide Passivated EPI Die Low Forward Voltage Low Leakage High Temperature Solder Compatible
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25000C/A
35000C/A
50000C/A
MD25050/MDL25050
MD25600/MDL25600
MD25800/MDL25800
SCD0729-1
100 Amp current 1000 volt diode
1000 Amp current diode
100 Amp current 500 volt diode
200 Amp current 1000 volt diode
MD550
50 Amp current 100 volt diode
MDL25800
md356
5701 diode
MD358
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Untitled
Abstract: No abstract text available
Text: CFSH05-20L SURFACE MOUNT SILICON LOW VF SCHOTTKY DIODE 0.5 AMP, 20 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH05-20L is a silicon Schottky diode designed for applications where ultra small package size and energy efficiency are prime
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CFSH05-20L
CFSH05-20L
OD-882L
100mA
500mA
25-April
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Untitled
Abstract: No abstract text available
Text: CFSH05-20L SURFACE MOUNT SILICON LOW VF SCHOTTKY DIODE 0.5 AMP, 20 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH05-20L is a silicon Schottky diode designed for applications where ultra small package size and energy efficiency are prime
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CFSH05-20L
CFSH05-20L
OD-882L
100mA
500mA
25-April
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IGBT 50 amp 1000 volt
Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Text: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode
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Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability at 125°C Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
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use igbt for 3 phase induction motor
Abstract: 3 phase brushless 400v
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
use igbt for 3 phase induction motor
3 phase brushless 400v
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Untitled
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
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MSK4357
Abstract: 1000 Amp current diode
Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance Integral Free Wheeling Fast Recovery Epitaxial Diode (FRED)
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MIL-PRF-38534
25KHz
MSK4357
1000 Amp current diode
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10 amp igbt 1000 volt
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
10 amp igbt 1000 volt
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Untitled
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED 500V, 28 Amp Capability at 125°C Ultra Low Thermal Resistance
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ISO-9001
25KHz
MIL-PRF-38534
MSK4357
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MYXDB0600-10CEN
Abstract: silicon carbide
Text: SiC Schottky Diode Rectifier Bridge 600 Volt 10 Amp Hermetic MYXDB0600-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 600V isolation • Higher efficiency • High current 10A • High temperature 210°C
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MYXDB0600-10CEN
MYXDB0600-10CEN
silicon carbide
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MYXD30600-10CEN
Abstract: silicon carbide
Text: SiC Schottky 3 Phase Diode Bridge 600 Volt 10 Amp Hermetic MYXD30600-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 600V isolation • 6 off high current 10A diodes • High temperature 210°C • HMP solder tinned leads available
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MYXD30600-10CEN
O-258
MYXD30600-10CEN
silicon carbide
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E1101
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability at 125°C Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
E1101
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MYXDB0650-10CEN
Abstract: silicon carbide
Text: SiC Schottky Diode Rectifier Bridge 650 Volt 10 Amp Hermetic MYXDB0650-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 650V isolation • Higher efficiency • High current 10A • High temperature 210°C
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MYXDB0650-10CEN
MYXDB0650-10CEN
silicon carbide
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ultrafast igbt
Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching
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of169
1200-volt
CPWR-AN03,
ultrafast igbt
IGBT 50 amp 1000 volt
calculation of IGBT snubber
CPWR-AN03
Cree SiC MOSFET
12 VOLT 10 AMP smps
24 volt 10 amp smps
power diode
AN-11A
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MYXDS1200-10ABS
Abstract: silicon carbide
Text: Silicon Carbide Schottky Diode 1200 Volt 10 Amp Hermetic MYXDS1200-10ABS y r a in Product Overview Features Benefits • High voltage 1200V isolation in a small package outline • Essentially no switching losses • Higher efficiency m i l e r P • Reduction of heat sink requirements
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MYXDS1200-10ABS
O-257
MYXDS1200-10ABS
silicon carbide
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15 amp 1000 Volt Diode
Abstract: 125OC
Text: SB039C025-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 1 Amp, 0.37VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB039C025-1-W-Ag
125OC
SCD0965-1
15 amp 1000 Volt Diode
125OC
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diode schottky 1000V 10a
Abstract: 125OC
Text: SB039C040-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 1 Amp, 0.40VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB039C040-1-W-Ag
125OC
SCD0967-1
diode schottky 1000V 10a
125OC
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125OC
Abstract: No abstract text available
Text: SB039C040-0.5-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 0.5 Amp, 0.36VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB039C040-0
125OC
SCD0968-1
125OC
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125OC
Abstract: 20 amp 1000 Volt diode
Text: SB039C020-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 20 Volt, 1 Amp, 0.35VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB039C020-1-W-Ag
125OC
SCD0977-1
125OC
20 amp 1000 Volt diode
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125OC
Abstract: 34VF Transys Electronics
Text: SB039C025-0.5-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 0.5 Amp, 0.34VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB039C025-0
125OC
SCD0966-1
125OC
34VF
Transys Electronics
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15 amp 1000 Volt Diode
Abstract: 106C015-30 125OC um99
Text: SB157/106C015-30-W-Ag/Al Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 30 Amp, 0.38VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al Suffix Al . Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage
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SB157/106C015-30-W-Ag/Al
125OC
SCD0981-1
15 amp 1000 Volt Diode
106C015-30
um99
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125OC
Abstract: No abstract text available
Text: SB157/106C015-20-W-Ag/Al Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 20 Amp, 0.37VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al Suffix Al . Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage
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SB157/106C015-20-W-Ag/Al
125OC
SCD0972-1
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