Untitled
Abstract: No abstract text available
Text: SHEET 1 OF 1 2.54 `.05 [.100 `.002 in] TYP. 2.54 `.05 [.100 `.002 in] TYP. n1.22 X2 [.048 in] PCB PIN 1 3 12.40 [.488 in] 320 CAP WHT (B040001) n1.00 (X2) [.039 in] ALIGNMENT PIN RECOMMENDED P.C.B. LAYOUT 2.50 [.098 in] 1.25 [.049 in] 1 3 ISOMETRIC 7.40
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B040001)
B050001)
B01ME12)
50VDC
2002/95/EC
330E11WHT
XB0811A
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PDF
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Untitled
Abstract: No abstract text available
Text: SHEET 1 OF 1 5.08 [.200 in] 2.54 [.100 in] n1.09 [.043 in] P.C. MOUNTING SWITCH FUNCTION POS. 1 POS. 2 E-LOGO ON OPPOSITE SIDE n2.54 ISOMETRIC 5.08 [.200 in] [.100 in] .61 [.024 in] ON ON 2-1 2-3 n6.10 [.240 in] (ON)=MOMENTARY 2 1 8.13 [.320 in] 3.20 [.126 in]
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100mA
2002/95/EC
800SP8B7M7QE
T822006
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PDF
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2N3728
Abstract: No abstract text available
Text: na. TELEPHONE: 379 212 227-0008 FAX; (973) 378-0980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.3A 2N3728 NPN HIGH PERFORMANCE DIFFERENTIAL AMPLIFIERS llfU . . . 0.0-1.0 PROM 100 MA to 1.0 mA 9 20'C, 0.8-1.0 FROM 100 jjA to 1.0 mA, -65* C to +125°C = • • • 3-° mV (MAX >
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2N3728
2N3728
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PDF
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Untitled
Abstract: No abstract text available
Text: SHEET 1 OF 1 2.54 [.100 in] 8.13 [.320 in] n1.09 5.08 [.200 in] [.043 in] P.C. MOUNTING n6.00 [.236 in] 4.39 [.173 in] FLAT SWITCH FUNCTION POS. 1 POS. 2 POS. 3 ISOMETRIC ON NONE ON 2-3 OPEN 2-1 POS. 1 POS. 3 n[.100 in] 5.59 [.220 in] 10-48 UNS-2A THREADS
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120VAC
28VDC
250VAC
200MSP1T2B1M2QE
T211035
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PDF
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100 6n tantalum
Abstract: vishay cwr11
Text: capacitors Solid Tantalum Chip Capacitor, Military, Surface-Mount features • Broad capacitance range: 0.10 µF to 100 µF • Broad voltage range: 4 WVDC to 50 WVDC • Military established reliability; Weibull failure rates B, C, and D • Molded case available in four military case codes: A, B, C, D
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CWR11
CWR11
A3A35
FC8357%
VMN-PT9143-0906
100 6n tantalum
vishay cwr11
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BUH100/D SEMICONDUCTOR TECHNICAL DATA BUH 100 D esigner’s Data Sheet POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS SWITCHMODE NPN Silicon Planar Power Transistor The BUH100 has an application specific s ta te -o f-a rt die designed for use in
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BUH100/D
BUH100
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PDF
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2N3501 MOTOROLA
Abstract: 2N3498 MOTOROLA 2N3498 2N3499 2n3500 2N3501
Text: MOTOROLA SC X S T R S /R 12E F I b3fcj7254 0 0 f l t 3 3 t 2N3498 thru 2N3501 MAXIMUM RATINGS Symbol Rating 2N3498 2N3499 2N3500 2N3501 Unît Collector-Emitter Voltage VCEO 100 150 Vdc Collector-Base Voltage VCBO 100 150 Vdc Emitter-Base Voltage vebo 300 mAdc
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b3fcj7254
2N3498
2N3501
2N3499
2N3500
2N3501
TQ-205AD)
2N3501 MOTOROLA
2N3498 MOTOROLA
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PDF
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B20B
Abstract: No abstract text available
Text: 100 - 300 MHz Standard Hybrid Amplifier . Parameters 100-300 MHz bandwidth II Q r q b c D f l 'O j O Specification limit Temperature +25 Frequency range dB +0.7/- l.l dB M ax Gain flatness 1.0 1.0 dB M ax p-p Reverse isolation 36 36 dB Min 1.5:1 1.5:1 Max
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OCR Scan
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PDF
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2N3501 MOTOROLA
Abstract: N3499 2n3501
Text: 2N3499 thru 2N3501* M AXIMUM RATINGS 2N3499 2N3500 2N3501 U n it Symbol C o lle ctor-E m itter Voltage v CEO 100 150 Vdc Collector-Base Voltage VCBO 100 Em itter-Base Voltage v EBO Rating 150 Vdc 6.0 Vdc C o lle ctor C urrent — C ontinuous <C Total Device D issipation a, T ^ = 25aC
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2N3499
2N3500
2N3501
2N3501*
O-205AD)
2N3501
2N3501 MOTOROLA
N3499
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PDF
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ztx327
Abstract: BF197P FERRANTI ELECTRONICS H9 sot 23 BSS63 BSS64 FMMT918 FMMTA12 FMMTA13 FMMTA14
Text: SOT-23 TRANSISTORS D A R L IN G T O N -N P N R A T IN G S A N D C H A R A C T E R IS T IC S at 25°C ambient temperature. Type hFE at Iq /V ce mA/Volts t Ic b o nA V cb V olts ic mA P to t * mW min 30 300 300 10K 10/5 100 30 30 300 300 5K 10/5 100 30 20 300
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OT-23
FMMTA14
FMMTA13
FMMTA12
10x8x0
FMMTA42
FMMTA92
FMMTA43
FMMTA93
BSS64
ztx327
BF197P
FERRANTI ELECTRONICS
H9 sot 23
BSS63
FMMT918
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PDF
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ballast electronic hps
Abstract: TRANSISTOR TC 100 mje1800b 740 data sheat AMD 754 hps electronic ballast jf18008 221A-06 AN1040 MJE18006
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE18006* M JF18006* Designer’s Data Sheet SWITCHMODE™ ‘ Motorola Preferred Dtvlct NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS
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MJE/MJF18006
O-220
O-220
MJF18006,
ballast electronic hps
TRANSISTOR TC 100
mje1800b
740 data sheat
AMD 754
hps electronic ballast
jf18008
221A-06
AN1040
MJE18006
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PDF
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21140-AF
Abstract: 10BASE2 10BASE5 21140af TTL catalog digital 21140af protocol contact id sia 21143-TA
Text: General Description 1 DIGITAL Semiconductor 21143 Overview The DIGITAL Semiconductor 21143 PCI/CardBus 10/100-Mb/s Ethernet LAN Controller 21143 supports the peripheral component interconnect (PCI) bus or CardBus. It provides a direct interface connection to the PCI bus and adapts easily
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10/100-Mb/s
21140-AF
10BASE2
10BASE5
21140af
TTL catalog
digital 21140af
protocol contact id sia
21143-TA
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PDF
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lt 302d
Abstract: voltage follower lm 741 AM102
Text: Am102/202/302 Voltage Follower Distinctive Characteristics • The Am102/202/302 are functionally, electrically, and pin-for-pin equivalent to the National LM102/ 202/302 • Supp ly voltage range: ±5.0V to ±18V • 100% reliability assurance testing in compliance with
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Am102/202/302
LM102/
100nA
L-STD-883
100t-
LIC-659
lt 302d
voltage follower lm 741
AM102
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor BCW72LT1 NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter- Base Voltage Symbol Value Unit VCEO 45 Vdc v CBO 50 Vdc Ve b o 5.0 Vdc 'c 100 mAdc Collector Current — Continuous
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BCW72LT1
-236A
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PDF
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SFP9510
Abstract: LD36A
Text: SFP9510 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ I BVdss = -100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge 175°C Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 nA Max. @ VDS= -100V
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SFP9510
-100V
O-220
30-OTO
T0-220
QQ3b32fl
500MIN
D3b33D
SFP9510
LD36A
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PDF
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mps3904
Abstract: MPS3903 MPS3904 transistor To92 transistor
Text: MOTOROLA SC 1EE D XSTRS/R F I ti3ti7aSM Symbol Rating Unit Value VCEO - 40 Vdc Collector-Base Voltage VcBO 60 ' Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 100 mAdc Total Device Dissipation @ T a = 25°C Derate above 25°C Pd
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OCR Scan
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MPS3903
MPS3904
O-226AA)
mps3904
MPS3904 transistor
To92 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: MOT ORCLA SC XSTRS/R F 1EE D | b3b72S4 DGflb2E7 3 | MAXIMUM RATINGS Sym bol Value Collector-Emitter Voltage VCEO 60 Vdc Collector-Emitter Voltage {Rgg = 10 Ohms VCER 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage V EBO 7,0 Vdc Collector Current — Continuous
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b3b72S4
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PDF
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Untitled
Abstract: No abstract text available
Text: SHEET OF L.E.D INFD.I YEL. SYMBOL PARAM ETERS PDWER DISSIPATION A VE FORWARD CURRENT REVERSE VOLTAGE FORWARD VOLTAGE PEAK EMISSION WAVELENGTH REVERSE CURRENT LUMINOUS INTENSITY @ 20mA Pd If V r Fv Xd MAX. TYP. UNITS 100 30 5 E.5 mW nA V V nm A - - 1.8 660
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OCR Scan
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12VDC
10OmlLLI-Ohms
TL1240YQ
P010363
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PDF
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2N6781
Abstract: No abstract text available
Text: POWER MOSFET TRANSISTORS JTX JTXV¡"I 100 Volt, 0.6 Ohm N-Channel FEATURES DESCRIPTION • • • • • The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design achieves a very low RDSIOn>and a high transconductance.
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2N6781
2N6782
2N6781
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PDF
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vogt V5
Abstract: vogt s2 vogt v6 vogt s1 thomson gup siemens toroidal core 58930 9l reset L4964 regulator circuit diagram vogt inductor
Text: L4964 HIGH CURRENT SWITCHING REGULATOR • 4 A OUTPUT CURRENT - 5.1 V TO 28 V OUTPUT VOLTAGE RANGE ■ 0 TO 100 % DUTY CYCLE RANGE ■ PRECISE ± 3 % ON-CHIP REFERENCE ■ SWITCHING FREQUENCY UP TO 120 KHz ■ VERY HIGH EFFICIENCY (UP TO 90 %) ■ VERY FEW EXTERNAL COMPONENTS
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L4964
L4964
B6633&
G0500
0GS12bfl
7CJBCJ537
vogt V5
vogt s2
vogt v6
vogt s1
thomson gup
siemens toroidal core
58930
9l reset
L4964 regulator circuit diagram
vogt inductor
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PDF
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a dbm hmf no
Abstract: No abstract text available
Text: HARRIS Mül SEMICONDUCTOR r r HARRIS 4hE D 1 • HMS H3DSEbT D 0 0 01 7 3 HMF-12000 -100 -200 Power Optimized GaAs FET 2-16 GHz PRODUCT DATA Features • +27.5 dBm Output Power -200) with 7.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates
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OCR Scan
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HMF-12000
a dbm hmf no
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PDF
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bip 373
Abstract: No abstract text available
Text: MOTOROLA Order this document by BUH100/D SEMICONDUCTOR TECHNICAL DATA BUH100 Designer’s Data Sheet POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS SWITCHMODE NPN Silicon Planar Pow er TVansistor T h e B U H 10 0 has an application specific s ta te -o f-a rt die designed for use in
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OCR Scan
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BUH100/D
BUH100
X34550C-0
bip 373
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PDF
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BC171A
Abstract: BC172C BC174A,B BC174A BC171B BC172A BC171A,B bc172a.b BC546
Text: MOT OROL A SC 12E D I t3b?ES4 QQÖSÖST 4 | XSTR S/ R F Sym bol BC 174A,B BC 171A,B BC 172A,B Unit Collector-Emitter Voltage VCEO 65 45 25 Vdc Collector-Base Voltage VCBO 80 50 30 Emitter-Base Voltage Veb o 6.0 Vdc Collector Current — Continuous >C 100 mAdc
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BC171A,
BC172A,
BC174A,
BC171A
BC172A
BC174A
BC171A/2A/4A
BC171B/2B/4B
BC172C
BC174A,B
BC171B
BC171A,B
bc172a.b
BC546
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PDF
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MMBT3906 spice
Abstract: 2N3906 2N3906 die 728p 200H MMBT3906 MMPQ3906 PZT3906 LS141
Text: 2N3906 / MMBT3906 / PZT3906 FAIRCHILD S E M IC O N D U C T O R tm 2N3906 C MMBT3906 •# TO-92 BÎ SOT-23 B Mark: 2A PZT3906 SOT-223 PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at collector currents of 10 nA to 100 mA. Sourced
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2N3906
PZT3906
OT-223
MMBT3906
OT-23
MMBT3906 spice
2N3906
2N3906 die
728p
200H
MMBT3906
MMPQ3906
PZT3906
LS141
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PDF
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