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    100 WATT HF MOSFET 12 VOLT Search Results

    100 WATT HF MOSFET 12 VOLT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    100 WATT HF MOSFET 12 VOLT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    800w power amplifier circuit diagram

    Abstract: 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques"
    Text: APPLICATION NOTE APT9502 By Kenneth W. Dierberger APT9502 LOW COST 1000 WATT, 300 VOLT RF POWER AMPLIFIER FOR 13.56 MHz Presented at RF EXPO EAST 1995 Page 1 Low Cost 1000 Watt, 300 Volt RF Power Amplifier for 13.56MHz Kenneth Dierberger Applications Engineering Manager


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    APT9502 56MHz 1000Watt, 56MHz 300VDC U-134, APT9303. 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques" PDF

    200 watt hf mosfet

    Abstract: 100 watt hf mosfet 400 watt hf mosfet MS4300 1N5925A 80 watt hf mosfet
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4300 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:


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    MS4300 MS4300 1N5925A MSC0878 200 watt hf mosfet 100 watt hf mosfet 400 watt hf mosfet 80 watt hf mosfet PDF

    erf7530

    Abstract: 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR
    Text: ERF7530 RF Power MOSFET - 30MHz / 75 Watt PEP DESCRIPTION The ERF7530 is a MOSFET transistor developed for RF power amplifier applications in the HF frequency range. High power in a TO-218 package for an excellent ‘watt per dollar’ value. TO-218 PACKAGE OUTLINE & MARKINGS


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    ERF7530 30MHz ERF7530 O-218 30MHz 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR PDF

    MS4550

    Abstract: 200 watt hf mosfet 100 watt hf mosfet C8c3 1N5925A
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4550 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 175 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz CLASS A OR AB DESCRIPTION:


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    MS4550 MS4550 1N5925A MSC0895 200 watt hf mosfet 100 watt hf mosfet C8c3 PDF

    apt449a

    Abstract: APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w
    Text: Technical Brief APTB 981 Capabilities of Low-cost High Voltage RF Power MOSFETs at HF and VHF Richard Frey, P.E. Advanced Power Technology Inc. 405 SW Columbia St., Bend, Oregon, 97702 ABSTRACT Plastic power MOSFET transistors have found increasing acceptance in all fields of power electronic applications


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    APT9701. ARF448A/B, APT9702. ARF449A/B APT9801. apt449a APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w PDF

    500w power amplifier circuit diagram

    Abstract: HEXFET Power MOSFET designer manual PCIM 177 APT9302 Transistor C538 200w power amplifier PCB layout 500 watt mosfet power amplifier circuit diagram 400w power amplifier PCB layout 500w hf power amplifier circuit diagram F624-19Q1
    Text: APPLICATION NOTE APT9501 By: Kenneth Dierberger Bobby McDonald Lee B. Max A High-Efficiency 400 Watt 13.56 MHz RF Power Amplifier Presented at RF EXPO WEST 1995 1 A High-Efficiency 400 Watt 13.56 MHz RF Power Amplifier Kenneth Dierberger Applications Engineering Manager


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    APT9501 400Watt, 56MHz 100VDC F-33700 500w power amplifier circuit diagram HEXFET Power MOSFET designer manual PCIM 177 APT9302 Transistor C538 200w power amplifier PCB layout 500 watt mosfet power amplifier circuit diagram 400w power amplifier PCB layout 500w hf power amplifier circuit diagram F624-19Q1 PDF

    462 variable capacitor

    Abstract: capicitor arco 462 MS4775 capacitor 10 uf mica variable capacitor 200 watt hf mosfet
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4775 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • • • GOLD METALLIZATION NO THERMAL RUNAWAY COMMON SOURCE CONFIGURATION


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    MS4775 MS4775 205nH 600nH 175MHz MSC0897 462 variable capacitor capicitor arco 462 capacitor 10 uf mica variable capacitor 200 watt hf mosfet PDF

    capicitor

    Abstract: 462 variable capacitor MS4750 200 watt hf mosfet
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4750 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • • • GOLD METALLIZATION NO THERMAL RUNAWAY COMMON SOURCE CONFIGURATION


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    MS4750 MS4750 205nH 600nH 150MHz MSC0915 capicitor 462 variable capacitor 200 watt hf mosfet PDF

    462 variable capacitor

    Abstract: arco 462 80 watt hf mosfet MS4500 1000 uf 50v capacitor 1000 uF 50V 200 watt hf mosfet Arco mica capacitor
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4500 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • • • GOLD METALLIZATION NO THERMAL RUNAWAY COMMON SOURCE CONFIGURATION


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    MS4500 MS4500 MSC0879 205nH 600nH 150MHz 462 variable capacitor arco 462 80 watt hf mosfet 1000 uf 50v capacitor 1000 uF 50V 200 watt hf mosfet Arco mica capacitor PDF

    MGCF21

    Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
    Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount


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    L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet PDF

    200 watt hf mosfet

    Abstract: AN1256 SD2921-10 SD2923 HF Amplifier 300w STMicroelectronics FABRICATION SITE
    Text: AN1256 APPLICATION NOTE HIGH-POWER RF MOSFET TARGETS VHF APPLICATIONS by Jim Davies and Brett Hanson 1. ABSTRACT The SD2923, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family; the packaged version is shown in figure


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    AN1256 SD2923, SD2923 200 watt hf mosfet AN1256 SD2921-10 HF Amplifier 300w STMicroelectronics FABRICATION SITE PDF

    mosfet HF amplifier

    Abstract: 300 watt hf transistor 12 volt 300 watt mosfet amplifier 200 watt hf mosfet SD2923 100 watt hf transistor 12 volt AN1256 SD2921-10 HF Amplifier 300w 300w rf amplifier
    Text: AN1256 APPLICATION NOTE HIGH-POWER RF MOSFET TARGETS VHF APPLICATIONS by Jim Davies and Brett Hanson 1. ABSTRACT The SD2923, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family; the packaged version is shown in figure


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    AN1256 SD2923, SD2923 mosfet HF amplifier 300 watt hf transistor 12 volt 300 watt mosfet amplifier 200 watt hf mosfet 100 watt hf transistor 12 volt AN1256 SD2921-10 HF Amplifier 300w 300w rf amplifier PDF

    OPT05

    Abstract: 1000 watt mosfet power amplifier 1094/BBM2E3KKO 300 watt mosfet amplifier
    Text: As appearing in Microwave Journal, Microwaves & RF and Microwave Product Digest 2008 Rev. 09/08 Empower RF Systems, Inc. ¬ Empower RF Systems, Inc. 316 West Florence Ave. Inglewood, CA 90301 Phone: +1 310 412-8100 Fax: +1 (310) 412-9232 Email: sales@empowerrf.com


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    pt1017

    Abstract: mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490
    Text: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 12-132 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 133-239 3.6 EC SI Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240-253


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    El00-KIT-ND J200-KIT-ND 1600-KIT-ND 1601-KIT-ND 1602-KIT-ND 1603-KIT-ND 1604-KIT-ND 923000-I-ND 10514-ND 10522-ND pt1017 mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490 PDF

    Untitled

    Abstract: No abstract text available
    Text: m m m RF Products a Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz


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    MS4300 MSC0878 PDF

    200 watt hf mosfet

    Abstract: No abstract text available
    Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz


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    MS4300 MSC0878 200 watt hf mosfet PDF

    80 watt hf mosfet

    Abstract: 3H DIODE spec 100 watt hf mosfet TRIMMER capacitor
    Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz


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    MS4300 S4300 MSC0878 80 watt hf mosfet 3H DIODE spec 100 watt hf mosfet TRIMMER capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 1 7 5 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz


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    MS4550 MS4550 MSC0895 PDF

    Untitled

    Abstract: No abstract text available
    Text: m m m RF Products a Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features 2 - 1 7 5 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz


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    MS4550 MSC0895 PDF

    5 watt hf mosfet

    Abstract: No abstract text available
    Text: • m m RF Products M ic m m s e m i P rogress Pow ered b y Te ch n olog y 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROW AVE TR AN SISTORS HF/VHF/UHF N -CHAN N EL M OSFETS Featuies 2 -1 7 5 MHz 30 WATTS


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    MS4550 MS4550 MSC0895 5 watt hf mosfet PDF

    100 watt hf mosfet 12 volt

    Abstract: transistor c s z 44 v 300 watt hf transistor 12 volt 150 watt hf transistor 12 volt LD810
    Text: Aft.MOU w an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N -C hannel E n h an c em e n t M ode Device HF to VHF A pplications 40 W atts CW C o m m o n Source Push-Pull C on fig u ratio n DMOS S tru c tu re


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    DU2840V 10C13C15 100 watt hf mosfet 12 volt transistor c s z 44 v 300 watt hf transistor 12 volt 150 watt hf transistor 12 volt LD810 PDF

    transistor 936

    Abstract: 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100
    Text: A tÓ K m m an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N-Channel Enhancement Mode Device HF to VHF Applications 40 Watts CW Common Source Push-Pull Configuration DMOS Structure Aluminum Metallization


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    DU2840V 5b422D5 C7C9C12C14 C10C13C15 5b4BE05 transistor 936 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100 PDF

    55310-A2

    Abstract: 4N25 PHILIPS MTP3N80E clock u150 100 watt hf mosfet 12 volt U150D TOKO 3702
    Text: UNITRODE CORPORATION APPLICATION NOTE U-150 APPLYING THE UCC3570 VOLTAGE-MODE PWM CONTROLLER TO BOTH OFF-LINE AND DC/DC CONVERTER DESIGNS By Robert A. Mammano Vice President Advanced Technology Abstract BiCMOS processing provides the key to a new integrated PWM controller which offers higher switching frequen­


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    U-150 UCC3570 48-toSV 187-3C80 26AWG 31AWG 25AWG T68-52D 20AWG 262LYF-0077M 55310-A2 4N25 PHILIPS MTP3N80E clock u150 100 watt hf mosfet 12 volt U150D TOKO 3702 PDF

    723 VOLTAGE REGULATOR

    Abstract: keystone carbon thermistor MC1723 rmc disc capacitor
    Text: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line MRF157 Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement Mode Designed primarily for linear large-signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics


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    MRF157 MRF157 723 VOLTAGE REGULATOR keystone carbon thermistor MC1723 rmc disc capacitor PDF