Untitled
Abstract: No abstract text available
Text: ISTf VITELIC V53C129A FAMILY HIGH PERFORMANCE, LOW POWER 128K X 8 B IT FAST PAGE MODE CMOS DYNAMIC RAM WITH WRITE-PER-BIT CAPABILITY HIGH PERFORMANCE V53C129A PRELIMINARY 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA)
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V53C129A
V53C129A
70/70L
80/80L
10/10L
V53C129AL
2/I02
4/I04
2/I06
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PDF
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Untitled
Abstract: No abstract text available
Text: kf VITELIC V53C866 FAMILY HIGH PERFORMANCE, LOW POWER 64K X 8 BIT STA TIC COLUMN CMOS DYNAMIC RAM 70/70L HIGH PERFORMANCE V53C866 80/80L 10/10L 12/12L M ax. R A S Access Tim e, *RAC 70 ns 80 ns 100 ns 120 ns M ax. Column Address Access Tim e, (tCAA) 35 ns
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V53C866
80/80L
70/70L
V53C866
10/10L
12/12L
V53C866L
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Q001
Abstract: DHR48 V53C464
Text: bSE M O SEL-VITELIC T> m b 3 S 3 3 T l Ü G Q lflM b b T l V53C464A FAMILY HIGH PERFORMANCE; LOW POWER 64K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 60/60L 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA)
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b3S33Tl
V53C464A
60/60L
70/70L
80/80L
10/10L
115ns
V53C464AL
V53C464A-10
Q001
DHR48
V53C464
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V53C466
Abstract: DQQ0400 vitelic V53C466 lawo M54510
Text: VITELIC VITELIC CORP ifl D ÌJ ^505310 DQQ0400 7 T-V6-Z3-/7 V 5 3C 4 66 FAMILY HIG H PERFORMANCE, LOW POWER 6 4 K X 4 B IT S TA TIC CO LUM N CMOS DYN A M IC RAM 70/70L 8 0 /8 0 L 10/10L Max. RAS Access Time, t ^ 70 ns 80 ns 100 ns 120 ns Max. Column Address Access Time, tCAA
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DQQ0400
70/70L
V53C466
10/10L
V53C466L
V53C466-12
DQQ0400
vitelic V53C466
lawo
M54510
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PDF
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Untitled
Abstract: No abstract text available
Text: kf VITELIC “ V53C 466 FAMILY HIG H PERFORMANCE, LOW POWER 6 4 K X 4 B IT STATIC COLUMN CMOS DYNAM IC RAM 70/70L 80/80L 10/10L 12/12L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns 120 ns Max. Column Address Access Time, (tCAA) 35 ns 40 ns 45 ns 55 ns Min. Fast Page Mode Cycle Time, ts w c tSRC
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70/70L
80/80L
10/10L
12/12L
V53C466
V53C466L
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F643242B
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E MEMORY CMOS 4x512 Kx 32 BIT SYNCHRONOUS DYNAMIC RAM MB81F643242B -70/-80/-10/-70L/-80L/-1OL CMOS 4-Bank x 524,288-Word x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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4x512
MB81F643242B
-70/-80/-10/-70L/-80L/-1OL
288-Word
32-bit
F643242B;
F9904
F643242B
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PDF
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M5M41000B-7L
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M41000BP,J.L,VP,RV-7L,-8L,-10L FAST PAGE MODE 1 0 4 8 5 7 6 -B IT 1 0 4 8 5 7 6 -W 0 R D BY 1 -BIT DYNAMIC RAM DESCRIPTIO N PIN C O N F IG U R A T IO N (TOP V IE W ) T his is a fa m ily o f 1 0 4 8 5 7 6 -w o rd b y 1 -b it d y n a m ic R A M s,
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M5M41000BP
M5M41000B-7L
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M4441QAWJ,J'LJP, RT-6L,-7L,-8L,-10L FAST PAGE MODE 4 1 9 4 3 0 4 -B IT 1 0 4 8 5 7 6 -W 0 R D BY 4-B IT D YN A M IC RAM DESCRIPTION T his is a fa m ily o f 1 0 4 8 5 7 6 -w o rd b y 4 -b it d y n a m ic R A M S , PIN CONFIGURATION (TOP VIEW)
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M5M4441QAWJ
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l64324
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 0 5 2 -1 E MEMORY CMOS 4 X 512 K x 32 BIT SYNCHRONOUS DYNAMIC RAM MB811L643242B -10/-12/-15/-10L/-12L/-15L CMOS 4-Bank x 524,288-Word x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu M B811L643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB811L643242B
-10/-12/-15/-10L/-12L/-15L
288-Word
B811L643242B
32-bit
l64324
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PDF
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RT9363A
Abstract: No abstract text available
Text: RT9363A 3 Channels 90mA x1/x2 Charge Pump White LED Driver General Description Features The RT9363A is a compact, high efficient and highly integrated charge pump white LED driver. It maintains the highest efficiency by utilizing a x1/x2 fractional charge
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RT9363A
RT9363A
DS9363A-03
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RT9363
Abstract: WDFN-10
Text: RT9363A 3 Channels 90mA x1/x2 Charge Pump White LED Driver General Description Features The RT9363A is a compact, high efficient and highly integrated charge pump white LED driver. It maintains the highest efficiency by utilizing a x1/x2 fractional charge
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RT9363A
RT9363A
DS9363A-02
RT9363
WDFN-10
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F641642B-103E/-103/-10/-103L/-1OL
576-Word
MB81F641642B
16-bit
MB81F641642B-103E/-103/-10/-103L/-1
54-pin
FPT-54P-M02)
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 2 M x 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F64842B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 2,097,152-Word x 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64842B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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OCR Scan
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MB81F64842B-103E/-103/-10/-103L/-1OL
152-Word
MB81F64842B
MB81F64842B-103E/-103/-10/-103L/-1
54-pin
FPT-54P-M02)
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PDF
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internal block diagram of mobile phone
Abstract: RT9287 SS0520 WDFN10 fbgp
Text: RT9287 Preliminary Boost Converter for OLED Power with Dual LDO General Description Features The RT9287 integrates a boost converter for OLED power and a Dual LDO for camera image sensor power. To achieve high efficiency, the boost converter optimizes its operating
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RT9287
RT9287
240mV
300mA)
300mA
DS9287-01
internal block diagram of mobile phone
SS0520
WDFN10
fbgp
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 4 M x 4 BIT SYNCHRONOUS DYNAMIC RAM M B81F64442B-103E/-103/-10/-103L/-1O L CMOS 4-Bank x 4,194,304-Word x 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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B81F64442B-103E/-103/-10/-103L/-1O
304-Word
MB81F64442B
MB81F644426
F9801
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 4 M x 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F64442B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 4,194,304-Word x 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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OCR Scan
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MB81F64442B-103E/-103/-10/-103L/-1OL
304-Word
MB81F64442B
MB81F64442B-103E/-103/-10/-103L/-1
54-pin
FPT-54P-M02)
F54003S-1C-1
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PDF
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2SA1115
2SA1235
2SA1235A
2SA1282
2SA1282A
2SA1283
2SA1284
2SA1285
2SA1285A
2SA1286
M52777SP
M54630P
M38881M2
m59320
57704L
M38173M6
SF15DXZ
M34236
m37204m8
54630p
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM M B81F641642B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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OCR Scan
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B81F641642B-103E/-103/-10/-103L/-1OL
576-Word
MB81F641642B
16-bit
F641642B
D-63303
F9801
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PDF
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Untitled
Abstract: No abstract text available
Text: 57E D • FA C Q R 34ST32S OOODbSe 7A1 « F G R S RGP30A FAGOR ELECTRONICS RGP30M ^T-03-lS V'iJ • 3 Amp. Glass Passivated Fast Recovery Rectifier Dimensions in mm. s “I s 1 1— 1 D0-201 AD DO-27 A Plastic Voltage 50 to 1.000 V. Current 3.0 A. at 55 °C.
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OCR Scan
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34ST32S
RGP30A
RGP30M
T-03-lS
D0-201
DO-27
DO-201AD
DO-27A
DO-201AE
DO-201
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PDF
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HVR-062
Abstract: HALF WAVE RECTIFIER do-201ae RGP30 RGP30 MS RGP30A RGP30M HVR062
Text: 57E D • 34ST32S OOODbSe 7A1 « F G R S FA Tj O K RGP30A FAGOR ELECTRONICS RGP30M 'T'-Q3-lS V'iJ • 3 Amp. Glass Passivated Fast Recovery Rectifier Dimensions in mm. s “I s 1 1— 1 D0-201 AD DO-27 A Plastic Voltage 50 to 1.000 V. Current 3.0 A. at 55 °C.
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34ST32S
RGP30A.
RGP30M
T-03-IS
DO-201
DO-27
C2-17
DO-201AD
DO-27A
DO-201AE
HVR-062
HALF WAVE RECTIFIER do-201ae
RGP30
RGP30 MS
RGP30A
RGP30M
HVR062
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 2 M x 8 BIT SYNCHRONOUS DYNAMIC RAM M B81F64842B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 2,097,152-Word x 8 Bit Synchronous Dynamic Random Access Memory DESCRIPTION The Fujitsu MB81F64842B is a CMOS Synchronous Dynamic RandorftAccesS: Memory SDRAM containing
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OCR Scan
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B81F64842B-103E/-103/-10/-103L/-1OL
152-Word
MB81F64842B
F64842B
D-63303
F9801
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PDF
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Untitled
Abstract: No abstract text available
Text: SM39R04G1 8-Bit Micro-controller 4KB with ISP Flash & 256B RAM embedded Description . 3
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Original
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SM39R04G1
-55uA
12MHz,
ISSFD-M053
SM39R04G1
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PDF
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A72A
Abstract: GP1A72A 5 pin transistor 3 amp meca wd 3pin
Text: GP1A72A Small Size OPIC Photointerrupter with Connector GP1A72A Unit : mm , Features 1. Compact type 2. Snap-in mounting type 3. 3-pin connector terminal • ❞ Internal connection diagram - Vm Wu!ata ✍ 1. Copiers 2. Laser beam printers 3. Facsimiles
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Original
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GP1A72A
A72A
GP1A72A
5 pin transistor 3 amp
meca
wd 3pin
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PDF
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DFN 3x3 PACKAGE
Abstract: RT9004
Text: RT9004 Preliminary 300mA, Low Noise, Ultra-Fast CMOS Triple LDOs Regulator General Description Features The RT9004 is designed for portable RF and wireless applications with demanding performance and space requirements. The RT9004 performance is optimized for
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RT9004
300mA,
RT9004
DS9004-00
DFN 3x3 PACKAGE
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