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    DG417

    Abstract: DG418 MAX4655 MAX4656 MAX4658 MAX4655ETA
    Text: 19-1984; Rev 2; 2/04 High-Current, 10Ω, SPST, CMOS Analog Switches Maxim’s MAX4655–MAX4658 are medium-voltage CMOS analog switches with low on-resistance of 10Ω max, specifically designed to handle large switch currents. With a switch capability of up to 400mA peak current and 300mA continuous current MAX4655/


    Original     		PDF MAX4655 MAX4658 400mA 300mA MAX4655/ MAX4656) 150mA MAX4657/MAX4658) MS012 DG417 DG418 MAX4656 MAX4655ETA

    SKY77733

    Abstract: sky77814 3G HSDPA repeater SKY77778-61 SKY77621 diode Marking code L4W SE2435
    Text: Product Selection Guide November 2014 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors. Leveraging core technologies, Skyworks supports automotive, broadband, wireless infrastructure, energy management, GPS, industrial, medical, military, wireless networking, smartphone, and tablet


    Original     		PDF BRO254-14B SKY77733 sky77814 3G HSDPA repeater SKY77778-61 SKY77621 diode Marking code L4W SE2435

    SKY77733

    Abstract: QUALCOMM FLIP CHIP ASSEMBLY SKY77765 aat2430 aat3604 aat140
    Text: Product Selection Guide June 2013 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors. Leveraging core technologies, Skyworks supports automotive, broadband, wireless infrastructure, energy management, GPS, industrial, medical, military, wireless networking, smartphone, and tablet


    Original     		PDF BRO254-13A SKY77733 QUALCOMM FLIP CHIP ASSEMBLY SKY77765 aat2430 aat3604 aat140

    SKY77709

    Abstract: SKY77432 AAT2430 SMV1275-079 aat3604 DIODE AA116 TT6P3-0860T
    Text: Product Selection Guide June 2014 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors. Leveraging core technologies, Skyworks supports automotive, broadband, wireless infrastructure, energy management, GPS, industrial, medical, military, wireless networking, smartphone, and tablet


    Original     		PDF BRO254-14A SKY77709 SKY77432 AAT2430 SMV1275-079 aat3604 DIODE AA116 TT6P3-0860T

    bourns torque angle sensor

    Abstract: 4116r resistor pack H 7555 4116R chassis level sensor c650 diode ptc fuel level sensor bourns fuel card BOURNS MF-LSMF PROTE TUBE
    Text: Bourns Product Profile Automotive Sensors Circuit Protection Solutions Magnetics Products Microelectronic Modules Precision Potentiometers Panel Controls & Encoders Resistive Products Bourns® Product Profile Table of Contents Components Trimpot® Trimming


    Original     		PDF e/K0920 bourns torque angle sensor 4116r resistor pack H 7555 4116R chassis level sensor c650 diode ptc fuel level sensor bourns fuel card BOURNS MF-LSMF PROTE TUBE

    4116r resistor pack

    Abstract: bourns fuel card chip resistors bourns bourns torque angle sensor 0201-size Battery chargers for portable dvd china rs485 fuel level sensor "steering Angle Sensor" chassis PT90 bourns 3549
    Text: Bourns Product Profile Automotive Sensors Circuit Protection Solutions Magnetics Products Microelectronic Modules Precision Potentiometers Panel Controls & Encoders Resistive Products Bourns® Product Profile Table of Contents Components Trimpot® Trimming


    Original     		PDF 50M/K0809 4116r resistor pack bourns fuel card chip resistors bourns bourns torque angle sensor 0201-size Battery chargers for portable dvd china rs485 fuel level sensor "steering Angle Sensor" chassis PT90 bourns 3549

    Untitled

    Abstract: No abstract text available
    Text: IW* VITELIC V 5 3 C 4 6 4 FA M ILY H IG H PERFORMANCE, LOW POWER 6 4 K X 4 B IT FA ST PAGE M O D E C M O S D Y N A M IC R A M 7 0 /7 0 L 80/80L 10/10L 12/12L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns 120 ns Max. Column Address Access Time, (tCAA) 35 ns


    OCR Scan     		PDF 80/80L 10/10L 12/12L V53C464 V53C464L V53C464

    Untitled

    Abstract: No abstract text available
    Text: bSE ]> m o s e l -vi tel ic MOSEL- VITELIC • bBSBBTl DGQnñS V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B Y T E W R ITE C M O S D Y N A M IC R A M V53C664 P R E L IM IN A R Y 80/80L 10/10L Max. RAS Access Time, tRAn 80 ns 100 ns Max. Column Address Access Time, (tr s 4)


    OCR Scan     		PDF V53C664 80/80L 10/10L V53C664L 16-bit V53C664K10

    Untitled

    Abstract: No abstract text available
    Text: M O S E L -V IT E L ie V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B Y TE W R ITE C M O S D Y N A M IC R A M V53C664 P R E LIM IN A R Y 80/80L 10/10L Max. RAS Access Time, tR4f0 80 ns 100 ns Max. Column Address Access Time, (tr 4 a 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tpp)


    OCR Scan     		PDF V53C664 80/80L 10/10L V53C664L 200nA 16-bit V53C664

    8L-10L

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs SDRAM Rev.1.3 Mar'98 M5M4V64S40ATP-8A,-8L,-8, -10L, -10 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM Some of contents are subject to change without notice. PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M4V64S40ATP is a 4-bank x 1048576-word x 16-bit


    OCR Scan     		PDF M5M4V64S40ATP-8A 1048576-WORD 16-BIT) M5M4V64S40ATP 16-bit 125MHz, 51ndersea 8L-10L

    Untitled

    Abstract: No abstract text available
    Text: 8,192 WORD X 8 BIT CMOS STATIC RAM Id e s c r i p t i o n I The TC5563APL is a 65,536 bit static random access m emory organized as 8,192 words by 8 bits u sin g CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features w ith a m axim um operating current of 5mA7MHz


    OCR Scan     		PDF TC5563APL 100ns/120ns/150ns. TC5563APLâ TC5563APL-12L DIP28-P-300B)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Speo. M it s u b is h i lsis Some contents are subject to change w ithout notice. MH8S64AKD -8,-10,-8L,-10L 536870912-BIT 8388608 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH8S64AKD is 8388608 - word by 64-bit Synchronous DRAM module. This consists of eight


    OCR Scan     		PDF MH8S64AKD 536870912-BIT 64-BIT 64-bit MIT-DS-0131-1

    l64324

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 0 5 2 -1 E MEMORY CMOS 4 X 512 K x 32 BIT SYNCHRONOUS DYNAMIC RAM MB811L643242B -10/-12/-15/-10L/-12L/-15L CMOS 4-Bank x 524,288-Word x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu M B811L643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan     		PDF MB811L643242B -10/-12/-15/-10L/-12L/-15L 288-Word B811L643242B 32-bit l64324

    Untitled

    Abstract: No abstract text available
    Text: SONY. CXK58257ATM/AYM -7 5L L/1 -7 0 0L L /8 L /8 5/1 L L0 /1 0 L2 LL /1 2 L L 32768-word X 8-bit High Speed CMOS Static RAM D escription C X K 5 8 2 5 7 A T M /A Y M is a 256K bits, 32 ,768 w o rds by 8 bits, CMOS static RAM. It is suitable fo r portable and battery back-up


    OCR Scan     		PDF CXK58257ATM/AYM 70L/85L/10L/12L -70LL/85LL/10LL/12LL 32768-word CXK58257ATM/AYM CXK58257ATM CXK58257AYM CXK58257ATM/AYM-70L. -70LL CXK58257ATM/AYM-85L

    Untitled

    Abstract: No abstract text available
    Text: QS6611 Preliminary Data Sheet Rev. 3.4 Q QS6611 lO/lOOBaseTX Symbol Transceiver Quality Semiconductor Inc. Preliminary Data Sheet Rev. 3.4 October 1996 DISTINCTIVE FEATURES • Low power all-CMOS design with Icc <120 mA for lOBaseT, Icc <100 mA for 100BaseT


    OCR Scan     		PDF QS6611 100BaseT AM78965/6 NS83223 00G3bSl 74bbflG3 00G3b22

    Untitled

    Abstract: No abstract text available
    Text: OL/12L SONY. CXK58267ATM/AYM -70LV85L/1 -70LL/85LL71OLL/12LL 32768-word X 8-bit High Speed C M O S Static RAM D escription C X K 582 67A T M /A Y M is a 256K bits, 32768 words by 8 bits, CMOS static RAM. It is suitable fo r portable and battery back-up systems which


    OCR Scan     		PDF CXK58267ATM/AYM -70LV85L/1 OL/12L -70LL/85LL71OLL/12LL 32768-word CXK58267ATM CXK58267AYM CXK58267ATM

    Untitled

    Abstract: No abstract text available
    Text: KM616V1000B, KM616U1000B Family CMOS SRAM Document Title 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Preliminary 1.0 April 13, 1996


    OCR Scan     		PDF KM616V1000B, KM616U1000B 100ns KM616V1000B KM616V1QQGB KM616U1QQQB

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SK2882 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tz-M O S V 2SK2882 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Source On Resistance : Rd S (ON) = 0.08 il (Typ.)


    OCR Scan     		PDF 2SK2882

    iC4013BP

    Abstract: No abstract text available
    Text: TC4013BP/BF C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC IC4013BP/TC4013BF DUAL D-TYPE FLIP FLOP T C 4 0 1 3 B P / B F contains two independent circuits of D type flip-flop. The input level applie'd to D A TA input are transferred to Q and Q" output by r is­


    OCR Scan     		PDF TC4013BP/BF IC4013BP/TC4013BF iC4013BP

    Untitled

    Abstract: No abstract text available
    Text: MOSEL- VITELIC PRELIMINARY V104J232, V104J236 512K x 32, 512K x 36 SIMM Features Description m 524,288 x 32 bit or 524, 288 x 36 bit The V 104J232 Memory Module is organized as 52 4 ,2 8 8 x 32 bits in a 72-lead single-in-line module. The 51 2K x 32 memory module uses 16 MoselVitelic 256K x 4 DRAMs. The V104J236 is organized


    OCR Scan     		PDF V104J232, V104J236 104J232 72-lead V104J232/236

    MAJORITY LOGIC

    Abstract: dual 5-Input Majority Logic Gate TC4530BP TC45 Dual 5 input majority logic gate
    Text: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4530BP TC4530BP DUAL 5-INPUT MAJORITY LOGIC GATE The TC45 30BP i s g ate. dual 5 -in p u t m a jo rity Each m a j o r i t y not th e in p u t a t le v e l. lo g ic g ate "H " l e v e l i s T he p o l a r i t y


    OCR Scan     		PDF TC4530BP MAJORITY LOGIC dual 5-Input Majority Logic Gate TC45 Dual 5 input majority logic gate

    TC5563APL-12

    Abstract: No abstract text available
    Text: 8,192 WORD X 8 BIT CMOS STATIC RAM [DESCRIPTION The TC5563APL is a 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a maximum operating current of 5mA/MHz


    OCR Scan     		PDF TC5563APL 100ns/120ns/150ns. TC5563APL--10, TC5563APL-12 TC5563APL-15 DIP28-P-300B)

    Untitled

    Abstract: No abstract text available
    Text: SDRAM Rev.1.0 May '98 64M bit Synchronous DRAM MITSUBISHI LSls M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-1 OL (4-BANK x 2097152-WORD x 8-BIT) M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-1 OL (4-BANK x 1048576-WORD x 16-BIT)


    OCR Scan     		PDF M2V64S20BTP-7 4194304-WORD M2V64S30BTP-7 2097152-WORD M2V64S40BTP-7 1048576-WORD 16-BIT) M2V64S20BTP M2V64S30BTP

    6V400

    Abstract: LR7L
    Text: Preliminary CMOS SRAM KM616V4000C, KM616U4000C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No 0.0 0.1 History Draft Date Remark Initial draft January 1 3 ,1998 Advance June 12, 1998 Preliminary Revised


    OCR Scan     		PDF KM616V4000C, KM616U4000C 256Kx16 7Q/85ns 70/85/100ns 85/100ns 6V400 LR7L