4525 GE
Abstract: No abstract text available
Text: BLUE POWER DIE BXCE 33 mil x 33 mil PRODUCT DATA SHEET DS-C16 The Bridgelux family of blue power die enables high performance and cost effective solutions to serve solid state lighting market. This next generation chip technology delivers improved efficiency and
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DS-C16
4525 GE
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF1570T1 Rev. 6, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF1570T1
MRF1570NT1/FNT1.
MRF1570FT1
MRF1570T1
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HTDS342125
Abstract: HTSS232065
Text: PROTECTION AND CONTROL Trans-Guard OS and OS Shorty Fuses “B” “C” OS Backup Fuses “A” 1/4”-20 threaded hole 1/2” deep both ends Table 1 – DIMENSIONAL Information for Trans-Guard™ OS Fuses Nominal Fuse Voltage Rating (kV) 8.3 15.5 23.0
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HTDS232065
HTDS232100
HTDS332150
HTDS332165
HTDS242035
HTDS242045
HTDS242040
HTDS242050
HTDS242080
HTDS242100
HTDS342125
HTSS232065
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MCL 31575
Abstract: No abstract text available
Text: Digital Step Attenuator 757 DC-2000 MHz 31.5 dB, 0.5 dB Step 6 Bit, Serial Control Interface, Single Positive Supply Voltage, +3V Product Features • Single positive supply voltage, +3V • Immune to latch up • Excellent accuracy, 0.1 dB Typ • Serial control interface
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DC-2000
DAT-31575-SP+
DG983-1
2002/95/EC)
100pF
100nF
TB-344
MCL 31575
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MCL31575
Abstract: PL-185
Text: Digital Step Attenuator 757 DC-2000 MHz 31.5 dB, 0.5 dB Step 6 Bit, Serial Control Interface, Dual Supply Voltage Product Features • Dual Supply Voltage: VDD=+3V, VSS=-3V • Immune to latch up • Excellent accuracy, 0.1 dB Typ • Serial control interface
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DC-2000
DAT-31575-SN+
DG983-1
2002/95/EC)
100pF
100nF
TB-343
MCL31575
PL-185
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ATC600F100JT250XT
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from
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MRF8P20100H
MRF8P20100HR3
MRF8P20100HSR3
ATC600F100JT250XT
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Nippon capacitors
Abstract: Nippon chemi
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 3, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with
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MRF6S9125N
MRF6S9125NR1
MRF6S9125NBR1
MRF6S9125N
Nippon capacitors
Nippon chemi
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MHZ50
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device
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MRF1513
MRF1513NT1
MRF1513T1
MHZ50
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ferroxcube 56-590-65
Abstract: UT25 coaxial 2N6439 UT25 VK200
Text: Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439/D
2N6439
ferroxcube 56-590-65
UT25 coaxial
2N6439
UT25
VK200
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IDT7383
Abstract: L4C383
Text: L4C383 L4C383 DEVICES INCORPORATED 16-bit Cascadable ALU Extended Set 16-bit Cascadable ALU (Extended Set) DEVICES INCORPORATED FEATURES DESCRIPTION ❑ High-Speed (15ns), Low Power 16-bit Cascadable ALU ❑ Extended Function Set (32 Advanced ALU Functions)
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L4C383
16-bit
IDT7383
MIL-STD-883,
68-pin
IDT7383
L4C383
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PR2A10DC6K-1.5 10A 250VAC
Abstract: BZV03 IEC -320 C14 SWITCH Neon DX0928 FX0359 PF0011 250VAC illuminated 240v rocker Switch
Text: POLYSNAP POWER INLET MODULES C14 and C16 IEC Inlet with Circuit Breaker VERTICAL MODULE ARRANGEMENT ᔢ Inlet with 2.8mm or 6.3mm tags ᔢ Single pole circuit breaker ᔢ Illuminated red or green and non-illuminated rocker switch ᔢ 125Vac and 250Vac Neons
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125Vac
250Vac
BZV03/Z0000/C1/T
Z0000
125Vac)
250Vac)
250Vac.
EN61058-1.
PR2A10DC6K-1.5 10A 250VAC
BZV03
IEC -320 C14 SWITCH
Neon
DX0928
FX0359
PF0011
illuminated 240v rocker Switch
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AP1060
Abstract: No abstract text available
Text: AP1060 450 MHz CDMA Power Amplifier Rev. 001 The AP1060 is a linear, highly efficient power amplifier utilizing InGaP/GaAs HBT process. It features high gain, and a linear power over 29 dBm under a 3.4V collector bias. The AP1060 is housed in a 4.0 x 4.0 x 0.8 mm ,
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AP1060
AP1060
16-pin,
16-pin
12ogy
00TYP
20TYP
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Hitachi DSA002754
Abstract: No abstract text available
Text: HA12203NT/HA12204NT Audio Signal Processor for Cassette Deck Dolby B-type NR with Recording System ADE-207-222B (Z) Target Specification 3rd Edition Jun. 1999 Description HA12203NT is silicon monolithic bipolar IC providing Dolby noise reduction system* 1, music sensor
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HA12203NT/HA12204NT
ADE-207-222B
HA12203NT
HA12204NT
Hitachi DSA002754
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-
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MRF6P3300H
MRF6P3300HR3/HR5
MRFE6P3300HR3/HR5.
PCN12895
MRF6P3300HR3
MRF6P3300HR5
MRF6P3300HR3
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MO-220-VEED-2
Abstract: AD8342 AD8351 AD8369 CP-16-3 RFC-M
Text: Active Receive Mixer DC to 500 MHz AD8342 Preliminary Datasheet FEATURES Broadband RF port: LF to 500 MHz Conversion gain: 3 dB Noise figure: 12 dB Input IP3: 24 dBm Input P1dB: 8.5 dBm LO drive: 0 dBm External control of mixer bias for low power operation
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AD8342
MO-220-VEED-2
16-Lead
CP-16-3)
PR05352-0-1/05
MO-220-VEED-2
AD8342
AD8351
AD8369
CP-16-3
RFC-M
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RL-1282-33-43
Abstract: RL-1283-10-43 RL-1282-47-43 RL-1283-33-43 LM2678-ADJ Nichicon code WV LM2678 LM2678S-12 LM2678S-ADJ renco- 47 uH, L39, Renco, Through Hole
Text: LM2678 SIMPLE SWITCHER High Efficiency 5A Step-Down Voltage Regulator General Description Features The LM2678 series of regulators are monolithic integrated circuits which provide all of the active functions for a step-down buck switching regulator capable of driving up to
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LM2678
LM2678
260KHz)
RL-1282-33-43
RL-1283-10-43
RL-1282-47-43
RL-1283-33-43
LM2678-ADJ
Nichicon code WV
LM2678S-12
LM2678S-ADJ
renco- 47 uH, L39, Renco, Through Hole
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BF transistor series datasheet 90
Abstract: transistor Bf 981 BLT71 FC 0137 MLD130
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT71 UHF power transistor Product specification 1995 Aug 17 Philips Semiconductors Product specification UHF power transistor BLT71 FEATURES • Very high efficiency • Low supply voltage. 4 handbook, halfpage APPLICATIONS
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BLT71
OT223
OT223
MAM043
BF transistor series datasheet 90
transistor Bf 981
BLT71
FC 0137
MLD130
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.
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MRF658/D
MRF658
MRF658/D*
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A113
Abstract: AN1955 AN1987 MW5IC2030GMBR1 MW5IC2030M MW5IC2030MBR1 MW5IC2030NBR1 600s3r9at
Text: Document Number: MW5IC2030M Freescale Semiconductor Rev. 6, 1/2006 Replaced by MW5IC2030NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MW5IC2030M
MW5IC2030NBR1
MW5IC2030
MW5IC2030MBR1
MW5IC2030GMBR1
A113
AN1955
AN1987
MW5IC2030GMBR1
MW5IC2030M
600s3r9at
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Untitled
Abstract: No abstract text available
Text: Document Number: MW5IC2030M Freescale Semiconductor Rev. 6, 1/2006 Replaced by MW5IC2030NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MW5IC2030M
MW5IC2030NBR1
MW5IC2030
MW5IC2030MBR1
MW5IC2030GMBR1
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planar transformer pcb
Abstract: X4 DIODE SMD ZENER DIODE 12V J152 planar transformer layout IR2086-330W IR2086S IRDC2086-330W IRF7380 smd 2U
Text: User Guide #0601 IRDC2086-330W Reference Design Rev. 2-28-06 By Weidong Fan Table of Contents Page Overview . 2 Board Description & Circuit Capability. 2
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IRDC2086-330W
UG-0601
IR2086S
IRF7380
E14/3
5/5-3F3-A160
TC54VN2702ECB71CT
TP4AEQP25/23
planar transformer pcb
X4 DIODE SMD
ZENER DIODE 12V
J152
planar transformer layout
IR2086-330W
IRF7380
smd 2U
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TAT7469SC8
Abstract: TAT7469 TAT7469-SC8
Text: TAT7469 CATV 75 Ω pHEMT Dual RF Amplifier Applications • • • • Edge QAM gain stage MDU Output Distribution amplifiers Node Transimpedance Amplifier Product Features • • • • • SOIC-8 package Functional Block Diagram 75 Ω, 50 MHz to 1200 MHz Bandwidth
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TAT7469
TAT7469
TAT7469SC8
TAT7469-SC8
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200 ADT2
Abstract: ADL5534 ADL5531 1008CS ADL5534ACPZ-R7 ADL5534ACPZ-WP ADL5534-EVALZ MO-220-VGGC
Text: 20 MHz to 500 MHz IF Gain Block ADL5534 Preliminary Technical Data FEATURES 14 GND 13 GND 15 GND 16 GND FUNCTIONAL BLOCK DIAGRAM 12 RFOUT1 RFIN1 1 ADL5534 11 CLIN1 10 RFOUT2 9 CLIN2 GND 5 RFIN2 3 NC 4 GND 7 GND 8 NC 2 GND 6 Fixed gain of 20 dB Operation up to 500 MHz
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ADL5534
ADL5534
31006-A
16-Lead
CP-16-13
ADL5534ACPZ-WP
ADL5534ACPZ-R7
200 ADT2
ADL5531
1008CS
ADL5534ACPZ-R7
ADL5534ACPZ-WP
ADL5534-EVALZ
MO-220-VGGC
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BZX84-3V3 z14
Abstract: BZX84-3V3 bzx843v3 BZX84C
Text: BZX84C serias SILICON PLANAR VOLTAGE REGULATOR DIODES Low power general purpose voltage regulator diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0 2 .8" 0.14 0.48 Ô3S L 0.70 0.50 3 2.6 1.4 1.2 2.4 R0.1
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BZX84C
BZX84-C3V3
BZX84-C7V5
BZX84-C18
BZX84-C43
BZX84-C27
BZX84-3V3 z14
BZX84-3V3
bzx843v3
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