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    100-C16 400 B Search Results

    100-C16 400 B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5400/BCA Rochester Electronics LLC NAND GATE; QUAD 2-INPUT Visit Rochester Electronics LLC Buy
    5400/BDA Rochester Electronics LLC 5400 - NAND GATE, QUAD 2-INPUT - Dual marked (M38510/00104BDA) Visit Rochester Electronics LLC Buy
    R8A77230D400BG#U0 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
    79RC32H434-400BCG Renesas Electronics Corporation Integrated Communications Processor Visit Renesas Electronics Corporation
    R8A77230C400BG#U0 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation

    100-C16 400 B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4525 GE

    Abstract: No abstract text available
    Text: BLUE POWER DIE BXCE 33 mil x 33 mil PRODUCT DATA SHEET DS-C16 The Bridgelux family of blue power die enables high performance and cost effective solutions to serve solid state lighting market. This next generation chip technology delivers improved efficiency and


    Original     		PDF DS-C16 4525 GE

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 MRF177M N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push–pull


    Original     		PDF MRF177/D MRF177 MRF177M 400part. MRF177 MRF177/D*

    Rogers RO4350B

    Abstract: RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01
    Text: Document Number: MML09212H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed


    Original     		PDF MML09212H MML09212HT1 Rogers RO4350B RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01

    transistor c36

    Abstract: J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet
    Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1570T1 is designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband


    Original     		PDF MRF1570T1/D MRF1570T1 MRF1570T1/D transistor c36 J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet

    HTSS242150

    Abstract: HTSS372125 HTSS242125 Hi-Tech Fuses
    Text: Trans-Guard OS Shorty Fuse C A ⁄4-20 threaded hole 1 ⁄2" deep both ends 1 Dimensional Information NOMINAL FUSE VOLTAGE RATING (KV) 8.3 17.2 15.5 23.0 38.0 CURRENT RATING (AMPS) FUSE CAT. NO. 40 HTSS232040 50 65 80 100 125 150 165 200 30 40 50 65 80


    Original     		PDF HTSS232050 HTSS232065 HTSS232080 HTSS232100 HTSS232125 HTSS232150 HTSS232165 HTSS232200 HTSS240030 HTSS240040 HTSS242150 HTSS372125 HTSS242125 Hi-Tech Fuses

    Allen-Bradley 100-C16 10

    Abstract: 140M-C2E Allen-Bradley 100-C16 10 contactor Allen-Bradley contactor 100-C30 10 140M-C2E-C25 140M-C2E-B16 Allen-Bradley 190S 100-FPT 140M-C2E-B40 140M-C-AFA11
    Text: Bulletin 140M Motor Protectors 0Circuit Breaker Bulletin 140M Motor Protectors • Current Range 0.1.45 A • With 140-CMN up to 90 A • Type 2 Coordination with Bulletin 100-C Contactors • UL Listed • “Self-protected” Type E Manual Combination


    Original     		PDF 140-CMN 100-C 140M-C2E 140M-F8E 140M-SG001A-US-P Allen-Bradley 100-C16 10 140M-C2E Allen-Bradley 100-C16 10 contactor Allen-Bradley contactor 100-C30 10 140M-C2E-C25 140M-C2E-B16 Allen-Bradley 190S 100-FPT 140M-C2E-B40 140M-C-AFA11

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF1570N Rev. 10, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1

    z15 Diode glass

    Abstract: 107 J117 surface mount TRANSISTOR MRF1570FT1 zener diode z7 b2 C35 zener
    Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570T1/D MRF1570T1 MRF1570FT1 z15 Diode glass 107 J117 surface mount TRANSISTOR zener diode z7 b2 C35 zener

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF1570T1 Rev. 6, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF1570T1 MRF1570NT1/FNT1. MRF1570FT1 MRF1570T1

    C12 IC GATE

    Abstract: mosfet 440 mhz AN211A AN215A AN721 MRF1570FNT1 MRF1570FT1 MRF1570NT1 MRF1570T1 Motorola 622 J112
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF1570T1 MRF1570FT1 MRF1570NT1 MRF1570FNT1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		PDF MRF1570T1/D MRF1570T1 MRF1570FT1 MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 MRF1570NT1 C12 IC GATE mosfet 440 mhz AN211A AN215A AN721 MRF1570FNT1 Motorola 622 J112

    zener diode marking c24

    Abstract: transistor c36 j063
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 7, 5/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570N zener diode marking c24 transistor c36 j063

    J042

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF1570T1 Rev. 5, 3/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570T1 MRF1570NT1 MRF1570FNT1 MRF1570FT1 J042

    C35 zener

    Abstract: ZO 107 MA mosfet j117 diode zener c29 AN211A AN215A AN721 MRF1570FT1 MRF1570T1 J117 MOSFET
    Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570T1/D MRF1570T1 MRF1570FT1 C35 zener ZO 107 MA mosfet j117 diode zener c29 AN211A AN215A AN721 MRF1570FT1 J117 MOSFET

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    MCL 31575

    Abstract: DG983
    Text: Digital Step Attenuator 757 DC-2000 MHz 31.5 dB, 0.5 dB Step 6 Bit, Parallel Control Interface, Single Positive Supply Voltage, +3V Product Features • Single positive supply voltage, +3V • Immune to latch up • Excellent accuracy, 0.1 dB Typ • Parallel control interface


    Original     		PDF DC-2000 DAT-31575-PP+ 2002/95/EC) T-005 TB-337 MCL 31575 DG983

    MCL 31575

    Abstract: No abstract text available
    Text: Digital Step Attenuator 757 DC-2000 MHz 31.5 dB, 0.5 dB Step 6 Bit, Serial Control Interface, Single Positive Supply Voltage, +3V Product Features • Single positive supply voltage, +3V • Immune to latch up • Excellent accuracy, 0.1 dB Typ • Serial control interface


    Original     		PDF DC-2000 DAT-31575-SP+ DG983-1 2002/95/EC) 100pF 100nF TB-344 MCL 31575

    14001 schematic diagram

    Abstract: No abstract text available
    Text: Digital Step Attenuator 50Ω DC-2400 MHz 31.5 dB, 0.5 dB Step, 6 Bit, Parallel Control Interface Dual Supply Voltage Product Features • Low Insertion Loss • High IP3, +52 dBm Typ • Excellent return loss, 20 dB Typ • Excellent accuracy, 0.1 dB Typ


    Original     		PDF DC-2400 ZX76-31R5-PN HK1149 ZX76-31R5-PN-S ZX76-31R5-PN ZX76-CP 20connector ZX76-WP ZX76-CD* 14001 schematic diagram

    Untitled

    Abstract: No abstract text available
    Text: FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance


    Original     		PDF FCP190N60 FCPF190N60

    MRF5S4140H

    Abstract: No abstract text available
    Text: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H

    C8450

    Abstract: MRF5S4140H
    Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H 28-volt MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H C8450

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9080N Rev. 0, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080N

    C4532X5R1H475MT

    Abstract: 600B3 C4532X5R1H475M 200B A113 A114 A115 AN1955 C101 Z5C-15
    Text: Document Number: MRF5S9080N Rev. 1, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080NR1 C4532X5R1H475MT 600B3 C4532X5R1H475M 200B A113 A114 A115 AN1955 C101 Z5C-15

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9080N Rev. 1, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080NR1

    C6V2 ST

    Abstract: ST c6v8 c5v6 st C5V1 ST zener c15 ST C4V3 ST C9V1 ST C4V7 ST c5v1 C5V6
    Text: BZV49 SERIES ELECTRICAL CHARACTERISTICS at Tamb= 25°C . Zener Voltage Vz at lz=2m A Type VOLTS BZV49: Nom . Tem perature Coefficient Sz at lz=2m A m V/°C Differential Resistance rz at lz=2m A a Reverse Current lRat V R HA V Min. Max. M ax. Min Max Max Max


    OCR Scan     		PDF BZV49 BZV49: C6V2 ST ST c6v8 c5v6 st C5V1 ST zener c15 ST C4V3 ST C9V1 ST C4V7 ST c5v1 C5V6