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    1000 NM LIGHT EMITTING DIODE Search Results

    1000 NM LIGHT EMITTING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1000 NM LIGHT EMITTING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hitachi he8812sg

    Abstract: Hitachi DSA0087 HE8812SG
    Text: HE8812SG GaAlAs Infrared Emitting Diode ADE-208-1000 Z 1st Edition Dec. 2000 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.


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    PDF HE8812SG ADE-208-1000 HE8812SG HE8812: hitachi he8812sg Hitachi DSA0087

    Untitled

    Abstract: No abstract text available
    Text: TXPI 1000 Gallium Aluminum Arsenide 850 nm Light Emitting Diode DESCRIPTION FEATURES This is a high radiance GaAlAs IR LED optimized for fiber optic applications requiring high power and a fast response time. ” Internal lensing for efficient fiber coupling


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    PDF -65oC 150oC -55oC 100oC 260oC,

    VTE1063

    Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
    Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters


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    PDF VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285

    multicolor led 2-pin

    Abstract: la cn5m lcg t67c-s2u2 M67S-N2Q2 Q65110A7237 lcg M67s p2q2 lw p4sg v2ab OSLUX LCB M67S LCB E6SG
    Text: Light Emitting Diodes Lumineszenzdioden 13 Light Emitting Diodes . Lumineszenzdioden . 13 Safety Instructions .


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    LXHL-LR3C

    Abstract: LXHL-LW3C datasheet OF LM 650 Royal Aluminum Base LED PCB dynamic LED traffic light signs technical data LXHL-LB3C Aluminum Base 3 LED emitters PCB lxhlle3c Flashlight luxeon
    Text: power light source Luxeon III Star Technical Datasheet DS46 Luxeon III is a revolutionary, energy efficient and ultra compact new light source, combining the lifetime and reliability advantages of Light Emitting Diodes with the brightness of conventional lighting.


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    PDF 5500K 1000mA LXHL-LR3C LXHL-LW3C datasheet OF LM 650 Royal Aluminum Base LED PCB dynamic LED traffic light signs technical data LXHL-LB3C Aluminum Base 3 LED emitters PCB lxhlle3c Flashlight luxeon

    LXHL-PM09

    Abstract: LXHL-PW09 LXHL-DM09 lighting projects luxeon ds45 DS45 LXHL-DB09 LXHL-DW09 LXHL-PB09 LXHL-PE09
    Text: power light source Luxeon III Emitter Technical Datasheet DS45 Luxeon III is a revolutionary, energy efficient and ultra compact new light source, combining the lifetime and reliability advantages of Light Emitting Diodes with the brightness of conventional lighting.


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    PDF 5500K 1000mA LXHL-PM09 LXHL-PW09 LXHL-DM09 lighting projects luxeon ds45 DS45 LXHL-DB09 LXHL-DW09 LXHL-PB09 LXHL-PE09

    diamond sx 600

    Abstract: Q65110A8176 Q65110A1954 LA E6SF Q65110A8177 LRTBGFTG Q65110A9038 LW QH8G-Q2S2-3K5L-1 Q65110A2395 pointled
    Text: Light Emitting Diodes 11 Light Emitting Diodes . 11 Safety Instructions . 13


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    lw3c

    Abstract: DS46 IEC825 LXHL-LW3C luxeon LXHL LXHL-LE3C
    Text: Technical Datasheet DS46 power light source Luxeon III Star Introduction Luxeon III is a revolutionary, energy efficient and ultra compact new light source, combining the lifetime and reliability advantages of Light Emitting Diodes with the brightness of conventional lighting.


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    PDF 1400mA 5500K lw3c DS46 IEC825 LXHL-LW3C luxeon LXHL LXHL-LE3C

    LW3C

    Abstract: DS46 IEC825 dynamic LED traffic light signs technical data Cyan Leds 440-nm LXHL-LE3C FM3C lxhl-ll3c
    Text: Technical Datasheet DS46 power light source LUXEON III Star Introduction LUXEON® III is a revolutionary, energy efficient and ultra compact new light source, combining the lifetime and reliability advantages of Light Emitting Diodes with the brightness of conventional lighting.


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    PDF 1400mA 5500K LW3C DS46 IEC825 dynamic LED traffic light signs technical data Cyan Leds 440-nm LXHL-LE3C FM3C lxhl-ll3c

    Lw3C

    Abstract: Conventional Edge Lit Backlights LXHL-LD3C Lumileds Lighting LD3C LXHL-LW3C DS46 IEC825 6205N LXHL-LE3C
    Text: Technical Datasheet DS46 power light source Luxeon III Star Introduction Luxeon III is a revolutionary, energy efficient and ultra compact new light source, combining the lifetime and reliability advantages of Light Emitting Diodes with the brightness of conventional lighting.


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    PDF 1400mA 5500K Lw3C Conventional Edge Lit Backlights LXHL-LD3C Lumileds Lighting LD3C LXHL-LW3C DS46 IEC825 6205N LXHL-LE3C

    dynamic LED traffic light signs technical data

    Abstract: ATA100-0 DS45 LXHL-PL09 lens 2005 LED LUMILEDS Lumileds
    Text: Technical Datasheet DS45 power light source Luxeon III Emitter Introduction Luxeon III is a revolutionary, energy efficient and ultra compact new light source, combining the lifetime and reliability advantages of Light Emitting Diodes with the brightness of conventional lighting.


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    PDF 1400mA dynamic LED traffic light signs technical data ATA100-0 DS45 LXHL-PL09 lens 2005 LED LUMILEDS Lumileds

    Untitled

    Abstract: No abstract text available
    Text: PLASTIC INFRARED LIGHT EMITTING DIODE QEE113 PACKAGE DIMENSIONS 0.175 4.44 0.087 (2.22) 0.050 (1.27) Ø0.065 (1.65) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN CATHODE ANODE 0.020 (0.51) SQ. (2X) SCHEMATIC 0.100 (2.54) 0.030 (0.76) 0.100 (2.54) NOM ANODE


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    PDF QEE113 QEE113 QSE113

    Untitled

    Abstract: No abstract text available
    Text: PLASTIC INFRARED LIGHT EMITTING DIODE QEE113 PACKAGE DIMENSIONS 0.175 4.44 0.087 (2.22) 0.050 (1.27) Ø0.065 (1.65) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN CATHODE ANODE 0.020 (0.51) SQ. (2X) SCHEMATIC 0.100 (2.54) 0.030 (0.76) 0.100 (2.54) NOM ANODE


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    PDF QEE113 QEE113 QSE113 GrayE113

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components OLP234 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD234 is a high-output GaAIAs infrared light emission micro-diode sealed with a transparent epoxy resin in a TO-46 case. Its light emission wave peaks at 910 nm.


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    PDF OLP234 OLD234 OLD234 72424D b724240

    OLD123

    Abstract: Infrared Emitting Diode OLP123 1000 nm light emitting diode
    Text: O K I electronic components OLP123_ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD123 is a high-output GaAs infrared light emission diode sealed with a flat glass in a TO-18 metal case. Its light emission wave peaks at 940 nm. Beause of its sharp directivity, multiple units


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    PDF OLP123_ OLD123 940nm OLD123 b7S4240 Ifm/100 242H0 Infrared Emitting Diode OLP123 1000 nm light emitting diode

    D010

    Abstract: OLD234 910nm
    Text: O K I electronic com ponents OLP234 GaAIAs Infrared Light Emitting Diode G E N E R A L D ESC R IPT IO N The OLD234 is a high-output GaAIAs infrared light em ission micro-diode sealed w ith a transparent epoxy resin in a TO-46 case. Its light em ission w ave peaks at 910 nm.


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    PDF OLD234 OLD234 72424D 754E40 Ifm/100 b724240 001fifl72 D010 910nm

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN75X GaAIAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 10 mW typ. • High-speed modulation capability : fc = 12 MHz I Absolute Maximum Ratings (Ta = 25°C)


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    PDF LN75X

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components OLP124 GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD124 is a high-output GaAs infrared light emission mindiode sealed with a transparent resin in a TO-18 metal case. Its light emission wave is peaks at 940 nm. Because of its sharp directivity,


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    PDF OLP124 OLD124 OLD12410Â b7E4240 OLD124 ti72424D

    Light Emitting Diodes

    Abstract: Infrared Emitting Diode OLD124
    Text: O K I electronic components OLP124 GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD124 is a high-output GaAs infrared light emission mindiode sealed with a transparent resin in a TO-18 metal case. Its light emission wave is peaks at 940 nm. Because of its sharp directivity,


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    PDF OLD124_ OLD124 b724240 OLD124 b7EM24G b75M240 Light Emitting Diodes Infrared Emitting Diode

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components OLP222 GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD222 is a high-output GaAl As infrared light emission diode sealed with a glass lens in a To18 case. Its light emission wave is peaks at 910 nm. Because of its sharp directivity, multiple units


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    PDF OLP222 OLD222 0LD222 2424D OLD222 b72424D 001flfl22 001flÃ

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components OLP222H_ GaAIAs Infrared Light Emitting Diode with Non-Spherical Surface Lens GENERAL DESCRIPTION The OLD222H is a high-output GaA IA s infrared light em ission diode sealed with a glass lens in a TO-18 case. Its light em ission w ave peaks at 910 nm. Because of its sh arp directivity, m ultiple units


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    PDF OLP222H_ OLD222H OLD222H 2424G 24EMQ b72424Q

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components 0 LP225 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD225 is a high-output GaAIAs infrared light emission microdiode sealed w ith a transparent epoxy resin in a ceramic case. Its light emission wave is peaks at 910 nm. The OLD 225 can have the


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    PDF LP225 OLD225 fci7E424D OLD225 OLD22on 0LD225 72424G b7E4E40

    Ij3 d

    Abstract: OLD225 OLP225 910nm
    Text: OKI electronic OLD225 components GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD225 is a high-output GaAIAs infrared light emission microdiode sealed with a transparent epoxy resin in a ceramic case. Its light emission wave is peaks at 910 nm. The OLD 225 can have the


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    PDF OLP225_ OLD225 L72424D OLD225 b754E40 Ifm/75 242M0 Ij3 d OLP225 910nm

    OLD222H

    Abstract: OLP222H 910nm
    Text: O K I electronic components OLP222H_ GaAIAs Infrared Light Emitting Diode with Non-Spherical Surface Lens GENERAL DESCRIPTION The OLD222H is a high-output GaAIAs infrared light em ission diode sealed w ith a glass lens in a TO -18 case. Its light em ission w ave peaks at 910 nm. Because of its sharp directivity, m ultiple units


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    PDF OLP222H_ OLD222H b7242M0 0LD222H Ifm/100 b724240 OLP222H 910nm