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    1000 WATT HF TRANSISTOR 12 VOLT Search Results

    1000 WATT HF TRANSISTOR 12 VOLT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    1000 WATT HF TRANSISTOR 12 VOLT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor SG 14

    Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
    Text: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de­ fense and commercial markets can take advantage of the


    OCR Scan     		TGF2021-04-SG 20MHz TGF2021-04-SG TGF2021-04-SG. transistor SG 14 pHEMT transistor tgf2021 TGF2021-04 4GHZ TRANSISTOR PDF

    150 watt hf transistor 12 volt

    Abstract: ferroxcube wideband hf choke
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silico n RF Pow er T ran sistor . . designed for 24 Volt UHF large-signal, common base amplifier applications in industrial and com m ercial FM equipment operating in the range of 8 5 0 -9 6 0 MHz. • Motorola Advanced Amplifier Concept Package


    OCR Scan     		Tac0-960 MRF898 150 watt hf transistor 12 volt ferroxcube wideband hf choke PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUH50/D SEMICONDUCTOR TECHNICAL DATA BUH50 D esigner’s Data Sheet POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS SWITCHMODE NPN Silicon Planar Power Transistor T h e B U H 5 0 has an a p p lic a tio n s p e c ific s t a t e - o f- a r t d ie d e s ig n e d fo r use in


    OCR Scan     		BUH50/D BUH50 21A-06 O-220AB PDF

    bd136 equivalent

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high


    OCR Scan     		MRF20060 MRF20060S Impedan70 IS22I bd136 equivalent RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .


    OCR Scan     		BUD44D2 St254 MTP8P10 500nH PDF

    100 watt hf mosfet 12 volt

    Abstract: transistor c s z 44 v 300 watt hf transistor 12 volt 150 watt hf transistor 12 volt LD810
    Text: Aft.MOU w an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N -C hannel E n h an c em e n t M ode Device HF to VHF A pplications 40 W atts CW C o m m o n Source Push-Pull C on fig u ratio n DMOS S tru c tu re


    OCR Scan     		DU2840V 10C13C15 100 watt hf mosfet 12 volt transistor c s z 44 v 300 watt hf transistor 12 volt 150 watt hf transistor 12 volt LD810 PDF

    transistor 936

    Abstract: 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100
    Text: A tÓ K m m an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N-Channel Enhancement Mode Device HF to VHF Applications 40 Watts CW Common Source Push-Pull Configuration DMOS Structure Aluminum Metallization


    OCR Scan     		DU2840V 5b422D5 C7C9C12C14 C10C13C15 5b4BE05 transistor 936 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100 PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES Dual Picoampere Input Current Bipolar Op Amp AD706 FEATURES CONNECTION DIAGRAM HIGH DC PRECISION 50 nV max Offset Voltage 0.6 n V /°C max Offset Drift 110 pA max Input Bias Current Plastic Mini-DIP N Cerdip (Q) and Plastic SOIC (R) Packages


    OCR Scan     		AD706 EIA-481A AD705, AD704 PDF

    apt449a

    Abstract: APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w
    Text: Technical Brief APTB 981 Capabilities of Low-cost High Voltage RF Power MOSFETs at HF and VHF Richard Frey, P.E. Advanced Power Technology Inc. 405 SW Columbia St., Bend, Oregon, 97702 ABSTRACT Plastic power MOSFET transistors have found increasing acceptance in all fields of power electronic applications


    Original     		APT9701. ARF448A/B, APT9702. ARF449A/B APT9801. apt449a APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w PDF

    motorola bipolar transistor

    Abstract: MOTOROLA TRANSISTOR BUD42D
    Text: MOTOROLA Order this document by BUD42D/0 SEMICONDUCTOR TECHNICAL DATA BUD42D Designer’s Data Sheet High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Hetwork and a Transient Voltage Suppression Capability POWER TRANSISTORS 4 AMPERES


    OCR Scan     		BUD42D/0 BUD42D BUD42D BUD42D: 69A-13 motorola bipolar transistor MOTOROLA TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: FP31QF 2 – Watt HFET Product Information • RFID: HF, UHF, microwave • Readers • • • Industrial Portable Handheld Units Min Typ Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 Thermal Resistance Junction Temperature (2)


    Original     		FP31QF 28-pin FP31QF JESD22-A114 JESD22-C101 J-STD-020B WJ1-4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: FP31QF 2 – Watt HFET Product Information Applications • RFID: HF, UHF, microwave • Readers Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain


    Original     		FP31QF 28-pin FP31QF WJ1-4401 PDF

    MCP1702 MC

    Abstract: 1702 5002e 1702 3302e AN765 AN792 MCP1702 20000 watts power amplifier circuit diagrams MCP1702-5002 A1 marking code sot-89
    Text: MCP1702 250 mA Low Quiescent Current LDO Regulator Features Description • • • • • The MCP1702 is a family of CMOS low dropout LDO voltage regulators that can deliver up to 250 mA of current while consuming only 2.0 µA of quiescent current (typical). The input operating range is specified


    Original     		MCP1702 MCP1702 DS22008B-page MCP1702 MC 1702 5002e 1702 3302e AN765 AN792 20000 watts power amplifier circuit diagrams MCP1702-5002 A1 marking code sot-89 PDF

    MCP1702T-3302E/CB

    Abstract: mark A E sot-89-3 20000 watts power amplifier circuit diagrams MCP1702-5002 1702 5002e MS 5002E AN765 AN792 MCP1702 1702 3302e
    Text: MCP1702 250 mA Low Quiescent Current LDO Regulator Features Description • • • • • The MCP1702 is a family of CMOS low dropout LDO voltage regulators that can deliver up to 250 mA of current while consuming only 2.0 µA of quiescent current (typical). The input operating range is specified


    Original     		MCP1702 MCP1702 DS22008D-page MCP1702T-3302E/CB mark A E sot-89-3 20000 watts power amplifier circuit diagrams MCP1702-5002 1702 5002e MS 5002E AN765 AN792 1702 3302e PDF

    Untitled

    Abstract: No abstract text available
    Text: MCP1702 250 mA Low Quiescent Current LDO Regulator Features: Description: • • • • • The MCP1702 is a family of CMOS low dropout LDO voltage regulators that can deliver up to 250 mA of current while consuming only 2.0 µA of quiescent current (typical). The input operating range is specified


    Original     		MCP1702 MCP1702 DS22008E-page PDF

    1702 5002e

    Abstract: 1702 3302e 20000 watts power amplifier circuit diagrams AN765 AN792 MCP1702 ha1014 MARK HC SOT-89 MCP1702-5002
    Text: MCP1702 250 mA Low Quiescent Current LDO Regulator Features: Description: • • • • • The MCP1702 is a family of CMOS low dropout LDO voltage regulators that can deliver up to 250 mA of current while consuming only 2.0 µA of quiescent current (typical). The input operating range is specified


    Original     		MCP1702 MCP1702 DS22008E-page 1702 5002e 1702 3302e 20000 watts power amplifier circuit diagrams AN765 AN792 ha1014 MARK HC SOT-89 MCP1702-5002 PDF

    723 VOLTAGE REGULATOR

    Abstract: keystone carbon thermistor MC1723 rmc disc capacitor
    Text: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line MRF157 Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement Mode Designed primarily for linear large-signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics


    OCR Scan     		MRF157 MRF157 723 VOLTAGE REGULATOR keystone carbon thermistor MC1723 rmc disc capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: PLED-P-xxxKA Rev.11-2010 PMLEDP-SERIES DIP24 Package WIRE Connection Step-Down Converter Constant Current High Efficiency Dimming Function Remote Control Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070 www.peak-electronics.de


    Original     		DIP24 D-55299 60VDC UL-94V0 100Hz. DIP24 PDF

    Untitled

    Abstract: No abstract text available
    Text: PLED-P-xxxLF Rev.11-2010 PMLEDP-SERIES DIP24 Package Step-Down Converter Constant Current High Efficiency Dimming Function Remote Control Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070 www.peak-electronics.de peak@peak-electronics.de


    Original     		DIP24 D-55299 60VDC UL-94V0 100Hz. PDF

    FP1189

    Abstract: 8893 application diagram
    Text: FP1189 ½ - Watt HFET Product Information Product Features • • • • • • • • Product Description 50 – 4000 MHz ISO & EPC compliant +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package


    Original     		FP1189 OT-89 FP1189 1-800-WJ1-4401 8893 application diagram PDF

    SD3932

    Abstract: pF CAPACITOR 100v 700B
    Text: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC


    Original     		SD3932 2002/95/EC SD3932 250MHz. pF CAPACITOR 100v 700B PDF

    100C

    Abstract: 700B SD3932
    Text: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive


    Original     		SD3932 2002/95/EC SD3932 14and 100C 700B PDF

    MCP1702

    Abstract: mark A E sot-89-3 AN765 AN792 20000 watts power amplifier circuit diagrams
    Text: MCP1702 250 mA Low Quiescent Current LDO Regulator Features Description • • • • • The MCP1702 is a family of CMOS low dropout LDO voltage regulators that can deliver up to 250 mA of current while consuming only 2.0 µA of quiescent current (typical). The input operating range is specified


    Original     		MCP1702 MCP1702 DS22008C-page mark A E sot-89-3 AN765 AN792 20000 watts power amplifier circuit diagrams PDF

    Fp2189

    Abstract: No abstract text available
    Text: FP2189 1 - Watt HFET Product Information Product Features • • • • • • • • 50 – 4000 MHz ISO & EPC compliant +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package Functional Diagram


    Original     		FP2189 OT-89 FP2189 1-800-WJ1-4401 PDF