LMBT3946DW1T1G
Abstract: 1N916 LMBT3946DW1T1
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in
|
Original
|
PDF
|
LMBT3946DW1T1
23/SOT
LMBT3946DW1T1G
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
LMBT3946DW1T1G
1N916
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in
|
Original
|
PDF
|
LMBT3946DW1T1
23/SOTâ
LMBT3946DW1T1G
S-LMBT3946DW1T1G
OT-363/SC-88
SC-88/SOT-363
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in
|
Original
|
PDF
|
LMBT3946DW1T1
23/SOTâ
LMBT3946DW1T1G
SC-88/SOT-363
|
7p1 marking
Abstract: ZXMP10A13F ZXMP10A13FTA ZXMP10A13FTC 10000Units
Text: ZXMP10A13F 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = - 100V : RDS(on)= 1 ; ID = - 0.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes
|
Original
|
PDF
|
ZXMP10A13F
ZXMP10A13FTA
ZXMP10A13FTC
7p1 marking
ZXMP10A13F
ZXMP10A13FTA
ZXMP10A13FTC
10000Units
|
7p1 marking
Abstract: ZXMP10A13FTA
Text: ZXMP10A13F 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = - 100V : RDS(on)= 1 ; ID = - 0.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes
|
Original
|
PDF
|
ZXMP10A13F
ZXMP10A13FTA
ZXMP10A13FTC
10000units
522-ZXMP10A13FTA
ZXMP10A13FTA
7p1 marking
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in
|
Original
|
PDF
|
LMBT3946DW1T1
23/SOTâ
LMBT3946DW1T1G
|
LMBT3946DW1T1G
Abstract: 1N916 LMBT3946DW1T1 cs_ sot-363
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in
|
Original
|
PDF
|
LMBT3946DW1T1
23/SOT
LMBT3946DW1T1G
Emitte10/14
SC-88/SOT-363
LMBT3946DW1T1G
1N916
cs_ sot-363
|
Untitled
Abstract: No abstract text available
Text: ZXM P10A13F 100V P-CHANNEL ENHANCEM ENT M ODE M OSFET SUM M ARY V BR DSS = - 100V : RDS(on)= 1 ; ID = - 0.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes
|
Original
|
PDF
|
P10A13F
13FTA
|