Untitled
Abstract: No abstract text available
Text: □upiin 9011 S e r ie s DIN41612 Q Type Female Material: Housing: 30% Glass filled PBT UL94V-0. Contacts: Phosphor Bronze. Electrical Characteristics: C urrent R ating:2 AMP. Dielectric W ithstanding VoltageAC 1000V For 1 minute. In su la to r Resistance: 1000Mflmin. at DC 500V.
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DIN41612
UL94V-0.
1000Mflmin.
30mQmax.
100mA.
94Max.
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Untitled
Abstract: No abstract text available
Text: 2P AC OUTLET SOCKET AC OUTLET POLARIZED Insulation Resistance: 1000Mfl Min. Dielectric Strength: 1500V Min. 15A 250V: UL.CSA. 1 -i r 2 in <N — 22.5 — AC OUTLET NON-POLARIZED 12.5 Insulation Resistance: 1000MD Min. Dielectric Strength: 1500V Min. 15A 250V: UL
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1000Mfl
1000MD
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AWPXX-8240-T-R
Abstract: No abstract text available
Text: A B * 1— 2.54 in f\ BBBBBBBBBBBBBB ÿgnnnDDDDDnggn o ö M MATERIALS: INSULATOR:P.B.T.30%GLASS FIBER,UL94V-0 CONTACT MATERIALBRASS OR PHOSPHOR BRONZE, UNDERPLATE: NICKEL CONTACT AREA: GOLD FLASH SLECTIVE ELECTRICAL: CURRENT RATING: 1AMP. INSULATION RESISTANCE: 1000Mfl MIN.
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AWPXX-8241
AWPXX-8240-T-R
UL94V-0
1000MO
500VAC
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AMP DIN41612
Abstract: IP 9011
Text: 9011 S e r ie s □upi in DIN41612 R Type P re ss F it 120Pin Fem ale Material: Housing: 30% Glass filled PBT UL94V-0. Contacts: Phosphor Bronze. Electrical Characteristics: Current Rating:2 AMP. Dielectric Withstanding Voltage:AC 1000V For 1 minute. Insulator Resistance: 1000Mflmin. at DC 500V.
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DIN41612
120Pin
UL94V-0.
1000MQmin.
30mQmax.
100mA.
54X39-99
AMP DIN41612
IP 9011
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Untitled
Abstract: No abstract text available
Text: Step 1: onnectorized Top Mount Base Unit Product Specifications M E C H A N IC A L I.D. LABEL MATERIAL INSERT MATERIAL HOUSING MATERIAL CONTACT MATERIAL CONTACT PLATING: RECEPTACLE SHELLS: INDICATING LIGHTS: AVG. LED LIFE EXPECTANCY: 0-RINGS: ELEC TR IC A L
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PALLADIUM/NICKEL-20u.
10-30VDC
POT12AMAX.
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Untitled
Abstract: No abstract text available
Text: □umn 9011 S e r ie s DIN41612 R Type Press Fit 120Pin Female Material: H o u sing : 30% Glass filled PBT UL94V-0. C o n ta cts: Phosphor Bronze. Electrical Characteristics: C u rre n t R a tin g :2 AMP. D ie lectric W ithstand ing Voltage:AC 1000V For 1 minute.
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DIN41612
120Pin
UL94V-0.
1000Mflmin.
100mA.
32-----------o
9011Series
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M34X1
Abstract: M29X1 M19x1 CN-1603RP CN-1002RP "M34X1" CN-1602RP CN-1603RJ CN-1602RJ HS35PB-16
Text: HS SERIES SHELL SIZE 12-35mm TRADITIONAL CONNECTORS Introduction T h e HS se rie s is g e n e ra lly c a lle d “ m e tal co n necto r” , a re em p lo ye d by N T T and se t m anufacturers as stan and is th e most w id e ly used standard m ulti-pin circu lar
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12-35mm
AC1000V
1000MS2
1000M
M34X1
M29X1
M19x1
CN-1603RP
CN-1002RP
"M34X1"
CN-1602RP
CN-1603RJ
CN-1602RJ
HS35PB-16
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803P402
Abstract: No abstract text available
Text: Step 2: Mini-Change9 Male/Female Cable Assembly Product Specifications M ECHANICAL IN SERT M ATERIAL M O LD ED B O D Y M ATERIAL CONTACT M ATERIAL CONTACT PLATING ELECTRICAL VOLTAGE RATING: C U RREN T RATING: CON TACT RESISTAN CE: PVC PVC BRASS GOLD - 5 ix IN. MIN
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1000M
PALLADIUM/NICKEL-20u,
18AWGPVC
803P402
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M29X1
Abstract: M34X1 CN1002 SR13 HS35PB-16 SR13-10R-2P connector cross reference hrs CN-1603RP 5MO 165
Text: HS SERIES SHELL SIZE 12-35mm TRADITIONAL CONNECTORS Introduction T h e HS se rie s is g e n e ra lly c a lle d “ m e tal co n necto r” , a re em p lo ye d by N T T and se t m anufacturers as stan and is th e most w id e ly used standard m ulti-pin circu lar
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12-35mm
AC1000V
1000MS2
1000MÃ
M29X1
M34X1
CN1002
SR13
HS35PB-16
SR13-10R-2P
connector cross reference hrs
CN-1603RP
5MO 165
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KM44C1000CJ
Abstract: No abstract text available
Text: DRAM MODULE KMM372C122CJ/CT KMM372C122CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C122C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C122C consists of sixteen CMOS
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KMM372C122CJ/CT
1Mx72
KMM372C122CJ/CT
KMM372C122C
300mil
48pin
168-pin
KMM372C122C-5
KM44C1000CJ
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