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    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡m era « STHV102 STHV102FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STHV102 STHV102FI V dss RDS on Id 1000 V 1000 V < 3 .5 Q. < 3 .5 Q. 4.2 A 2.6 A • TYPICAL RDS(on) = 3.1 Q. . ■ . . . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STHV102 STHV102FI

    Untitled

    Abstract: No abstract text available
    Text: S T P 4 N 100 S T P 4 N 100 FI ¿57 S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP 4N 100 S TP 4N 100FI V dss RDS on Id 1000 V 1000 V < 3 .5 Q. < 3 .5 Q. 4 A 2.2 A TYPICAL RDS(on) = 3.1 Q. AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF 100FI al100/FI ISQWATT220

    5n90fi

    Abstract: No abstract text available
    Text: £ j ï SGS-THOMSON S T P 5N 90 S T P 5N 90FI ULKgraMOeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP5N 90 STP5N 90FI • . . . . . . V d ss RDS on Id 900 V 900 V < 2.4 Q. < 2.4 Q. 5 A 2.8 A TYPICAL RDS(on) = 1.9 £2 AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF O-220 ISOWATT220 5n90fi