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    1001R6BN

    Abstract: APT1001R6BN 1002R4BN APT1002R4BN APT*1002R4BN APT1002RBN
    Text: D TO-247 G 1001R6BN 1000V 8.0A 1.60Ω S POWER MOS IV APT1002R4BN 1000V 6.5A 2.40Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original     		PDF O-247 APT1001R6BN APT1002R4BN 1001R6BN 1002R4BN O-247AD 1001R6BN 1002R4BN APT*1002R4BN APT1002RBN

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    Abstract: No abstract text available
    Text: ADVANCED P ow er Te c h n o lo g y 1001R6BN 1000V 8.0A 1.60Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001R6BN


    OCR Scan     		PDF APT1001R6BN 1001R6BN O-247AD