10027 MOSFET Search Results

10027 MOSFET Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

10027 MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
3 phase dc control ir2130 Abstract: mj 10033 10027 mosfet 3 phase ir2130 IR2111 IR2112 IR2113 IR2121 IR2125 IR2128 Text: Index International Rectifier Control Integrated Circuits 16-Lead SOIC V Part Number I O+/ – Offset V (mA) V OUT (V) t on / off (ns) 16-Lead DIP 14-lead DIP w/o 4 Design Features 14-Lead DIP Fax-on-Demand High and Low Side Driver IR2110 500 2 /2 10 / 2	Original	16-Lead 14-lead IR2110 IR2112 IR2113 SPA419 SPA619 IRSF3010 3 phase dc control ir2130 mj 10033 10027 mosfet 3 phase ir2130 IR2111 IR2112 IR2113 IR2121 IR2125 IR2128	PDF
DT94-15 Abstract: DOWNLOAD DT94-15 IR2110 h bridge application notes GBAN-PVI-1 DT98-2 ballast Self-Oscillating h bridge ir2113 ir21xx Self-Oscillating SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET Text: Control ICs / MERs Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Control Integrated Circuits Description Document # Pages Date Control IC Selection Guides Application / Product / Feature Selection Guide	Original	May-96 IR2101 Feb-96 IR2102 IR2103 Jun-98 IR2104 DT94-15 DOWNLOAD DT94-15 IR2110 h bridge application notes GBAN-PVI-1 DT98-2 ballast Self-Oscillating h bridge ir2113 ir21xx Self-Oscillating SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET	PDF
DT94-15 Abstract: IR2110 h bridge application notes ir21xx GBAN-PVI-1 halfbridge design ir2109 IR2110 H bridge driver circuit IR2154 DT94-10A AN978A diode gen 52 Text: Revised 5/11/99 www.irf.com Control ICs / MERs Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Control Integrated Circuits Description Document # Pages Date Control IC Selection Guides Application / Product / Feature Selection Guide	Original	IR1110 IR1210 IR2101 IR21014 IR2102 IR21024 IR2103 IR21034 IR2104 IR21044 DT94-15 IR2110 h bridge application notes ir21xx GBAN-PVI-1 halfbridge design ir2109 IR2110 H bridge driver circuit IR2154 DT94-10A AN978A diode gen 52	PDF
DIN 18541 Abstract: Opto Coupler TLP 621 ic 741 clamper LM 10841 IEC 60061-1 TLHY46 smd glass zener diode color codes TDC 310 NTC an 17807 a Opto Coupler TLP 521 Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book leds and displays vishay semiconductors vHN-db2101-0409 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents	Original	vHN-db2101-0409 DIN 18541 Opto Coupler TLP 621 ic 741 clamper LM 10841 IEC 60061-1 TLHY46 smd glass zener diode color codes TDC 310 NTC an 17807 a Opto Coupler TLP 521	PDF
ecg semiconductors master replacement guide Abstract: transistor SMD marked RNW th 20594 TRANSISTOR si 6822 MIL-STD-202F-201A CT 1975 sam transistors br 6822 sun hold ras 2410 relay TRANSISTOR SMD MARKING CODE jg Mist Ultrasonic Humidifier Text: RELIABILITY OF SEMICONDUCTOR DEVICES I. RELIABILITY OF SEMICONDUCTOR DEVICES 1. OUR PHILOSOPHY OF QUALITY 2. SEMICONDUCTOR RELIABILITY RELIABILITY OF SEMICONDUCTOR DEVICES I. RELIABILITY OF SEMICONDUCTOR DEVICES 1. OUR PHILOSOPHY OF QUALITY Since its foundation, Mitsubishi Electric has been seeking a philosophy of extending the business and contributing the society with high	Original		PDF
induction cooker fault finding diagrams Abstract: induction cooker schematic diagram th 20594 JEDEC JESD22-B116 free datasheet transistor said horizontal tt 2222 8 PIN DIL 20594 JEDEC JESD22-B109 JESD22-B108A schematic diagram induction cooker induction cooker coil design Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	REJ27L0001-0101 induction cooker fault finding diagrams induction cooker schematic diagram th 20594 JEDEC JESD22-B116 free datasheet transistor said horizontal tt 2222 8 PIN DIL 20594 JEDEC JESD22-B109 JESD22-B108A schematic diagram induction cooker induction cooker coil design	PDF
TSMC 0.18 um MOSfet Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221 Text: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes	Original	QML-38535 MIL-PRF-38535 MIL-STD-790 MIL-STD-690 -581DSCC QML-38535 TSMC 0.18 um MOSfet M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221	PDF
PTF10027 Abstract: ericsson 10027 f 0952 Text: ERICSSON $ PTF 10027 12 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10027 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 12 watts minimum output power. Nitride surface passivation	OCR Scan	IEC-68-2-54 Std-002-A P4917-ND P5276 5801-PC 20AWG, PTF10027 ericsson 10027 f 0952	PDF
ic 0941 Abstract: ericsson 10027 10027 mosfet SIEMENS B 58 371 R/Atmel 0947 Text: E R IC SSO N í PTE 10027* 12 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10027 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 18 watts minimum output power. Nitride surface passivation	OCR Scan	P4917-ND P5276 5801-PC ic 0941 ericsson 10027 10027 mosfet SIEMENS B 58 371 R/Atmel 0947	PDF