Untitled
Abstract: No abstract text available
Text: TOSHIBA 100FXG13,100FXH13 TOSHIBA FAST RECOVERY DIODE m n F Y fii^ • w ■ m m ■ SILICON DIFFUSED TYPE m n F Y H i3 w ar g ■ ^ur ■ m ^ m m m m tr Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 3 - 0 8 . 4 ± 0.5 • Repetitive Peak Reverse Voltage : V r r ]V[ = 3000V
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100FXG13
100FXH13
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Untitled
Abstract: No abstract text available
Text: 100FXG13,100FXH13 TOSHIBA TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100FXG13, 100FXH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 3- • • • Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time Tj = 25°C 0 6,4 ± Q.5
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100FXG13
100FXH13
100FXG13,
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100FXG13
Abstract: 100FXH13 OOFXH13
Text: TOSHIBA 10OFXG 13,1 OOFXH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100FXG13, 100FXH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 3 - 06.4 ± 0.5 • • • Repetitive Peak Reverse Voltage VRRM = 3000V Average Forward Current ÏF AV = 1(>0a
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10OFXG
OOFXH13
100FXG13,
100FXH13
100FXG13
100FXG13
100FXH13
OOFXH13
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Untitled
Abstract: No abstract text available
Text: 100FXG13,100FXH13 TO SHIBA TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100FXG13, 100FXH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage VRRM = 3000 V Average Forward Current :F A V = 100A Reverse Recovery Time (Tj = 25°C)
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100FXG13
100FXH13
100FXG13,
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