URU100120
Abstract: RURU100120 URU100
Text: RURU100120 Data Sheet January 2002 100A, 1200V Ultrafast Diode Features The RURU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU100120
RURU100120
125ns)
125ns
175oC
URU100120
URU100
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fdb075n15a
Abstract: No abstract text available
Text: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has
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FDP075N15A
F102/FDB075N15A
FDB075N15A
FDB075N15A
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MOSFET 50V 100A TO-220
Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A
Text: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been
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FDP045N10A
FDI045N10A
MOSFET 50V 100A TO-220
MOSFET 50V 100A
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RURU10060
Abstract: No abstract text available
Text: RURU10060 Data Sheet January 2002 100A, 600V Ultrafast Diode Features The RURU10060 is an ultrafast diode with soft recovery characteristics trr < 80ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU10060
RURU10060
175oC
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FDB075N15A
Abstract: No abstract text available
Text: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been
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FDP075N15A
F102/FDB075N15A
FDB075N15A
FDB075N15A
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Untitled
Abstract: No abstract text available
Text: FDP030N06B_F102 N-Channel PowerTrench MOSFET 60V, 195A, 3.1mΩ Features Description • RDS on = 2.67mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored
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RURU100120
Abstract: URU100120
Text: RURU100120 Data Sheet January 2000 File Number 3545.3 100A, 1200V Ultrafast Diode Features The RURU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial
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RURU100120
RURU100120
125ns)
125ns
URU100120
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ISD 100
Abstract: FDP075N15A
Text: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been
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FDP075N15A
F102/FDB075N15A
FDB075N15A
ISD 100
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RURU10060
Abstract: No abstract text available
Text: RURU10060 Data Sheet January 2000 File Number 3546.3 100A, 600V Ultrafast Diode Features The RURU10060 is an ultrafast diode with soft recovery characteristics trr < 80ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURU10060
RURU10060
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FDL100N50F
Abstract: FDL100N50 fdl100n
Text: UniFETTM FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055Ω Features Description • RDS on = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDL100N50F
238nC)
FDL100N50F
FDL100N50
fdl100n
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FDP020N06
Abstract: micro solar inverters Mosfet application note fairchild FDP020N06B 48V kW battery charger
Text: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60V, 313A, 2m Features Description • RDS on = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored
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Untitled
Abstract: No abstract text available
Text: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60V, 313A, 2m Features Description • RDS on = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055Ω Features Description • RDS on = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDL100N50F
238nC)
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Untitled
Abstract: No abstract text available
Text: FDMS86550 N-Channel PowerTrench MOSFET 60 V, 100A, 1.65 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS86550
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RHRU10060
Abstract: No abstract text available
Text: RHRU10060 Data Sheet January 2002 100A, 600V Hyperfast Diode Features The RHRU10060 is a hyperfast diode with soft recovery characteristics trr < 50ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRU10060
RHRU10060
175oC
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Untitled
Abstract: No abstract text available
Text: FDA8440 N-Channel PowerTrench MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS on = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids
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FDA8440
345nC
145oC)
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FDA8440
Abstract: alternator diode 80a
Text: FDA8440 N-Channel PowerTrench MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS on = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids
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FDA8440
345nC
FDA8440
alternator diode 80a
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FDA8440
Abstract: No abstract text available
Text: FDA8440 N-Channel PowerTrench MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS on = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids
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FDA8440
345nC
FDA8440
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D2103
Abstract: D2101 D1300 S3900SF 1N285 S3900MF D1201P 1N5213 1N538 S3901S
Text: 1TR Product Matrix GTO Product Matrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550
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220AB
S3902DF
S3900E
S3901M
S3903MF
S3900MF
S3901MF
S3900S
S3901S
S3900SF
D2103
D2101
D1300
S3900SF
1N285
D1201P
1N5213
1N538
S3901S
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S3901S
Abstract: D1201P 1N538 150a gto 1N539 S3900E 1N5214 S3900S S3900SF S3901M
Text: 1TR Product Matrix GTO Product Matrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550
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220AB
S3902DF
S3900E
S3901M
S3903MF
S3900MF
S3901MF
S3900S
S3901S
S3900SF
S3901S
D1201P
1N538
150a gto
1N539
S3900E
1N5214
S3900SF
S3901M
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rca thyristor
Abstract: 40A GTO thyristor 1N5216 gto 100A 1N5213 1N3563 D1300A 50A GTO thyristor S3900MF 1N5217
Text: 1TR Product M atrix GTO Product M atrix For H o rizontal-D eflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500
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220AB
S3902DF
S3900E
S3901M
S3903MF
S3900MF
S3901MF
S3900S
S3901S
S3900SF
rca thyristor
40A GTO thyristor
1N5216
gto 100A
1N5213
1N3563
D1300A
50A GTO thyristor
1N5217
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1N5216
Abstract: D1300A 1N5212 d1201p 1N5213 1N5211 1N539 S3900E 1N5217 S3900S
Text: 1TR Product M atrix GTO Product M atrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550
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220AB
S3902DF
S3900E
S3901M
S3903MF
S3900MF
S3901MF
S3900S
S3901S
S3900SF
1N5216
D1300A
1N5212
d1201p
1N5213
1N5211
1N539
S3900E
1N5217
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1n5399 equivalent
Abstract: scr rca 40A GTO thyristor rca thyristor D2101 G5001A SCR GTO 1N2862 D3202 S3901S
Text: 1TR Product Matrix GTO Product Matrix For H o rizontal-D eflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550
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220AB
S3902DF
S3900E
S3901M
S3903MF
S3900MF
S3901MF
S3900S
S3901S
S3900SF
1n5399 equivalent
scr rca
40A GTO thyristor
rca thyristor
D2101
G5001A
SCR GTO
1N2862
D3202
S3901S
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S3901S
Abstract: S3900SF S3900MF rca thyristor scr 50a to 65 S3903MF 1N3194 SCR 50A S3900S S3901MF
Text: 1TR Product Matrix GTO Product Matrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW ATT Commutating Retrace 8A 100A 'T (R M S) 'TSM (60 Hz) 400 450 500 550 600 650 700 750 ig t M RCA GTO's 45 4 S3900MF S3900S S3900SF 30 4 ^ a)
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220AB
S3902DF
S3900E
S3901M
S3903MF
S3900MF
S3901MF
S3900S
S3901S
S3900SF
S3901S
S3900SF
rca thyristor
scr 50a to 65
1N3194
SCR 50A
S3901MF
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