T064H
Abstract: T310H T150H GR-1089-CORE J-STD-020A TB0640H TB0720H TB3500H tb0900h
Text: TB0640H - TB3500H 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE • · · · · · · · 100A Peak Pulse Current @ 10/1000ms 400A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device
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Original
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TB0640H
TB3500H
10/1000ms
8/20ms
GR-1089-CORE,
UL497B
TB0640H-13
TB0720H-13
T064H
T310H
T150H
GR-1089-CORE
J-STD-020A
TB0720H
TB3500H
tb0900h
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PDF
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T260H
Abstract: No abstract text available
Text: TB0640H - TB3500H Green 100A BIDIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE Features Mechanical Data • • • • • • • • • • • • 100A Peak Pulse Current @ 10/1000 s 400A Peak Pulse Current @ 8/20μs 58 - 320V Stand-Off Voltages
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Original
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TB0640H
TB3500H
GR-1089-CORE,
UL497B
DS30360
T260H
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PDF
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Untitled
Abstract: No abstract text available
Text: TB0640H - TB3500H 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE • · · · · · · · 100A Peak Pulse Current @ 10/1000ms 400A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device
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Original
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TB0640H
TB3500H
10/1000ms
8/20ms
GR-1089-CORE,
UL497B
DS30360
TB0640H-13
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PDF
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GR-1089-CORE
Abstract: TB0640H TB0720H TB3500H T064H
Text: TB0640H - TB3500H 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE • · · · · · · 100A Peak Pulse Current @ 10/1000ms 400A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction B Bi-Directional Protection In a Single Device
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Original
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TB0640H
TB3500H
10/1000ms
8/20ms
GR-1089-CORE,
UL497B
DS30360
GR-1089-CORE
TB0720H
TB3500H
T064H
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PDF
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Untitled
Abstract: No abstract text available
Text: TB0640H - TB3500H 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE • · · · · · · · 100A Peak Pulse Current @ 10/1000ms 400A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device
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Original
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TB0640H
TB3500H
10/1000ms
8/20ms
GR-1089-CORE,
UL497B
DS30360
TB0640H-13
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PDF
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TB3100H-13-F
Abstract: GR-1089-CORE TB0640H TB0720H TB3500H
Text: TB0640H - TB3500H Green 100A BIDIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE Features Mechanical Data • • • • • • • • • • • • 100A Peak Pulse Current @ 10/1000 s 400A Peak Pulse Current @ 8/20μs 58 - 320V Stand-Off Voltages
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Original
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TB0640H
TB3500H
10/1000s
8/20s
GR-1089-CORE,
UL497B
DS30360
TB3100H-13-F
GR-1089-CORE
TB0720H
TB3500H
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PDF
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GR-1089-CORE
Abstract: TB0640H TB0720H TB3500H
Text: TB0640H - TB3500H 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE • · · · · · · 100A Peak Pulse Current @ 10/1000ms · UL Listed Under Recognized Component Index, File Number 156346 · Available in Lead Free Finish/RoHS Compliant Version
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Original
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TB0640H
TB3500H
10/1000ms
8/20ms
Equipme20H-13
TB0900H-13
TB1100H-13
TB1300H-13
TB1500H-13
TB1800H-13
GR-1089-CORE
TB0720H
TB3500H
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PDF
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GR-1089-CORE
Abstract: J-STD-020D TB0640H TB0720H TB3500H
Text: TB0640H - TB3500H Green 100A BIDIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • 100A Peak Pulse Current @ 10/1000 s
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Original
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TB0640H
TB3500H
10/1000s
8/20s
GR-1089-CORE,
UL497B
DS30360
GR-1089-CORE
J-STD-020D
TB0720H
TB3500H
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PDF
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PA30U
Abstract: SCHEMATIC 8000w Power Amplifier PA30 S1000 VB-12 1000W mosfet 2000w power amplifier e180 cc APEX A75
Text: FEATURES • OUTPUT POWER 2000W CONT, 8000W PULSE • NO SECOND BREAKDOWN, MOSFET OUTPUT • l0 = 50A CONTINUOUS, 100A PULSE • WIDE SUPPLY RANGE, 30V to 200V • 45 V/ns TYPICAL SLEW RATE • VERSATILE PROGRAMMABLE CURRENT LIMIT • THERMAL PROTECTION, OVERTEMP OUTPUT
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OCR Scan
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546-APEX
PA30U
SCHEMATIC 8000w Power Amplifier
PA30
S1000
VB-12
1000W mosfet
2000w power amplifier
e180 cc
APEX A75
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PDF
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500w power amplifier circuit diagram
Abstract: PULSE CURRENT SOURCE analog telephone set circuits DIP9 package
Text: HIGH CURRENT PULSE DRIVER PD01 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • WIDE SUPPLY RANGE—200V UP TO 100A PULSE SOURCE THERMAL SHUTDOWN SOA SENTRYTM APPLICATIONS • HIGH POWER LASER DIODE DRIVER
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Original
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546-APEX
RANGE--200V
PD01U
500w power amplifier circuit diagram
PULSE CURRENT SOURCE
analog telephone set circuits
DIP9 package
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PDF
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Untitled
Abstract: No abstract text available
Text: DEC 8 '992j FEATURES • • • • • • • OUTPUT POWER 2000W CONT, 8000W PULSE NO SECOND BREAKDOWN, MOSFET OUTPUT l0 = 50A CONTINUOUS, 100A PULSE WIDE SUPPLY RANGE, 30V to 200V 45 V/ns TYPICAL SLEW RATE VERSATILE PROGRAMMABLE CURRENT LIMIT THERMAL PROTECTION, OVERTEMP OUTPUT
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OCR Scan
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AZ5059013
PA30U
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PDF
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Untitled
Abstract: No abstract text available
Text: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar FEATURES • Rise Time: 10ns • Delay Time: 10ns • Recovery Time: 0.5/<s • Pulse Current: to 100A • Turn-on with 20ns, 10mA gate pulse GB300 GB300A GB301 GB301A DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the tum-on speed of logic level
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OCR Scan
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GA300
GA300A
GA301
GA301A
GB300
GB300A
GB301
GB301A
GA300,
GB300
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PDF
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GDT, semitron,
Abstract: No abstract text available
Text: S E M T R O N INDUSTRIES LTD 13E 1 • ai37iai 0000134 D « S L C B - P I 1- r> FIO DATA LINE PROTECTION Transient Voltage Suppressor ■Glass Passivated Junction Voltage Range 6.8V to 48 Volts Nominal 100A Peak Pulse Current APPLICATIONS NEW GENERATION ■ Transient voltage suppression for Induced Lightning, NEMP,
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OCR Scan
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ai37iai
DO-35
DO-35
DO-41
DO-15
DO-201AD
GDT, semitron,
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PDF
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RFA100N05E
Abstract: GC200 100N05E ff048
Text: ffl h a r r is J a n u a ry 1 9 9 3 RFA 100N05E N-Channel Enhancem ent-M ode Power Field-Effect Transistor MegaFET Package Features • 100A, 50V • rDS(on) = 0 -0 0 8 fi D R A IN • Electrostatic Discharge Rated • UIS SOA Rating Curve (Single Pulse)
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OCR Scan
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100N05E
RFA100N05E
23e-12
55e-9
1e-030
14e-9)
37e-5)
GC200
100N05E
ff048
|
PDF
|
|
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500w power amplifier circuit diagram
Abstract: 500w ampli PULSE CURRENT SOURCE
Text: HIGH C U R R E N T P U L S E D RIVER APÉ* il i c i o n e h PDOl NOL o c r h t t p ://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • WIDE SUPPLY RANGE— 200V UP TO 100A PULSE SOURCE THERMAL SHUTDOWN SOA SENTRY APPLICATIONS
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OCR Scan
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546-APEX
54JTHRU,
PD01U
500w power amplifier circuit diagram
500w ampli
PULSE CURRENT SOURCE
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27107 rev. A 09/97 T.HFL SERIES T-Modules FAST RECOVERY DIODES Features 40 A 70 A 85 A Fast recovery time characteristics Electrically isolated base plate 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly
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Original
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I27107
E78996
T85HFL.
T40HFL.
T70HFL.
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PDF
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70HFL
Abstract: 40HF D562A
Text: Bulletin I27107 rev. B 09/06 T.HFL SERIES T-Modules FAST RECOVERY DIODES Features 40 A 70 A 85 A Fast recovery time characteristics Electrically isolated base plate 3500 V RMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly
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Original
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I27107
E78996
70HFL
40HF
D562A
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PDF
|
Untitled
Abstract: No abstract text available
Text: Bulletin I27107 rev. B 09/06 T.HFL SERIES T-Modules FAST RECOVERY DIODES Features 40 A 70 A 85 A Fast recovery time characteristics Electrically isolated base plate 3500 V RMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly
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Original
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I27107
E78996
08-Mar-07
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PDF
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APT0406
Abstract: APT0501 APT0502 APTGF100DA120TG ntc-1,0
Text: APTGF100DA120TG Boost chopper NPT IGBT Power Module OUT Q2 G2 E2 NTC1 0/VBU S G2 E2 VBUS VBUS SENSE 0/VBUS OUT OUT E2 NT C2 G2 NT C1 Features • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes
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Original
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APTGF100DA120TG
APT0406
APT0501
APT0502
APTGF100DA120TG
ntc-1,0
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Module 600V 100A IGBT Module MG06100S-BR1MM RoHS Features • Ultra Low Loss • P ositive Temperature Coefficient • High Ruggedness • W ith Fast Free-Wheeling Diodes • H igh Short Circuit Capability Applications • SMPS and UPS • Converter
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Original
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MG06100S-BR1MM
E71639
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PDF
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DL2M100N5
Abstract: dawin
Text: D W DAWIN Electronics TM DL2M100N5 May. 2009 500V DUAL N-Channel MOSFET Description Equivalent Circuit and Package DAWIN’S Dual power MOSFET devices are designed for switching applications of high voltage and current. You have to connect external fast recovery diode reverse connected across each MOSFET
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Original
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DL2M100N5
250nC
DL2M100N5
dawin
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PDF
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MIMMG100SR120UZA
Abstract: No abstract text available
Text: MIMMG100SR120UZA 1200V 100A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module
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Original
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MIMMG100SR120UZA
Te150
Figure12.
Figure13.
Figure14.
Figure15.
Figure16.
MIMMG100SR120UZA
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PDF
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MIMMG100SR120B
Abstract: No abstract text available
Text: MIMMG100SR120B 1200V 100A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module
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Original
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MIMMG100SR120B
Figure12.
Figure13.
Figure14.
Figure15.
Figure16.
MIMMG100SR120B
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PDF
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MIMMG100DR120B
Abstract: No abstract text available
Text: MIMMG100DR120B 1200V 100A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module
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Original
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MIMMG100DR120B
Figure12.
Figure13.
Figure14.
Figure15.
Figure16.
MIMMG100DR120B
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PDF
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