Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y
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MX0912B100Y;
MZ0912B100Y
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MX0912B100Y
Abstract: MZ0912B100Y philips capacitor 470
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y
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MX0912B100Y;
MZ0912B100Y
SCA53
127147/00/02/pp12
MX0912B100Y
MZ0912B100Y
philips capacitor 470
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MX0912B351Y
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A
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MX0912B351Y
OT439A
SCA53
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MX0912B351Y
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MX0912B251Y
Abstract: capacitor 470 uF
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A
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MX0912B251Y
OT439A
SCA53
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MX0912B251Y
capacitor 470 uF
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RX1214B170W
Abstract: 100A101
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium
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RX1214B170W
SCA53
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RX1214B170W
100A101
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency
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MX0912B251Y
OT439A
SCA53
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transistor 359 AJ
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency
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MX0912B351Y
OT439A
SCA53
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transistor 359 AJ
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740C3
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y
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MX0912B100Y;
MZ0912B100Y
MX0912B100Y
OT439
OT443
740C3
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MF1011B900Y
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium
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MF1011B900Y
SCA53
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MF1011B900Y
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MX0912B250Y
Abstract: 33-AS IEC134 015 capacitor philips
Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high
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33-AS"
MX0912B250Y
G04b34b
T-33-Ã
711Dfl2b
004b352
0QMb43?
MX0912B250Y
33-AS
IEC134
015 capacitor philips
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Untitled
Abstract: No abstract text available
Text: Philips Components MZ0912B100Y D ISC R ETE SEM ICO N D U CTO R S D a ta s h a e t • t a lu s P re fim in a iy s p e c ific a tio n d a le o f le s u e J u ly 1 9 9 0 NPN silicon planar epitaxial microwave power transistor FEATU RES APPLICATIO N D ESCRIPTIO N
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MZ0912B100Y
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MF1011B900Y
Abstract: SC15
Text: Philips Semiconductors Product specification Microwave power transistor MF1011B900Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 |as pulse width, duty factor 10% Microwave performance up to T mb = 25 °C in a common-base class C
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MF1011B900Y
MLC725
OT448A.
MF1011B900Y
SC15
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NPN Silicon Epitaxial Planar Transistor
Abstract: MZ0912B50Y TACAN
Text: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting
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MZ0912B50Y
NPN Silicon Epitaxial Planar Transistor
MZ0912B50Y
TACAN
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor
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RX1214B170W
7/00/02/pp12
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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MX0912B100Y
OT439A
100A101KP50X
MX0912B100Y;
MZ0912B100Y
MGK067
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gk06
Abstract: microwave transistor S- parameter GK066
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B251Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OT439A
100A101KP50X
MX0912B251Y
GK066
gk06
microwave transistor S- parameter
GK066
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Untitled
Abstract: No abstract text available
Text: Philips Components DISCRETE SEMICONDUCTORS Data sheet statue Prelim inary sped location date of lesua July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high em itter efficiency.
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MX0912B350Y
00351Mb
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MCA680
Abstract: electrolytic capacitor 470 transistor Zo 105 NPN Silicon Epitaxial Planar Transistor IEC134 MZ0912B50Y transistor Common Base amplifier
Text: MZ0912B50Y Data sheet status Preliminary specification data of Issue July 1990 NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high em itter efficiency. • D iffused em itter ballasting
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MZ0912B50Y
M90-1193/Y
MCA680
electrolytic capacitor 470
transistor Zo 105
NPN Silicon Epitaxial Planar Transistor
IEC134
MZ0912B50Y
transistor Common Base amplifier
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bt 109 transistor
Abstract: CD493 RA444
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 ns/10% • Internal input and output prematching networks allow an easier design of circuits • Diffused emitter ballasting resistors
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ns/10%
MX1011B700Y
CD493
bt 109 transistor
CD493
RA444
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JH transistor
Abstract: MX0912B251Y SC15 Philips electrolytic screw
Text: Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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MX0912B251Y
OT439A
MBC881
OT439A.
JH transistor
MX0912B251Y
SC15
Philips electrolytic screw
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HCW51
Abstract: MX0912B350Y D0310 IEC134
Text: DISCRETE SEMICONDUCTORS Data shMt a «tatù* Preliminary spedfcation date of Issus July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high emitter efficiency. • Diffused em itter ballasting
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MX0912B350Y
bbS3131
00351Mb
HCW51
MX0912B350Y
D0310
IEC134
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microwave transistor S- parameter
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 us pulse width, duty factor 10% • Diffused emitter ballasting resistors improve ruggedness MFt 011B900Y QUICK REFERENCE DATA
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100A101kp50x
F1011B900Y
microwave transistor S- parameter
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philips capacitor 470
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y FEATURES QUICK REFERENCE DATA • Interdigitated structure provides high emitter efficiency Microwave performance up to T mb = 25 °C in a common base class C broadband amplifier.
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MZ0912B50Y
01KP50X
philips capacitor 470
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GL-056
Abstract: sot439
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B351Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OT439A
100A101KP50X
MX0912B351Y
GL-056
sot439
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