C8450
Abstract: MRF5S4140H
Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these
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MRF5S4140H
28-volt
MRF5S4140HR3
MRF5S4140HSR3
MRF5S4140H
C8450
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J0743
Abstract: MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3
Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these
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Original
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PDF
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MRF5S4140H
MRF5S4140HR3
MRF5S4140HSR3
28-volt
MRF5S4140HR3
J0743
MRF5S4140H
j0810
100B121JP500X
A114
A115
AN1955
C101
JESD22
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uhf 150w mosfet
Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
Text: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV0912-150
121eliable.
EG-01-DS11A
or429-HVVi
uhf 150w mosfet
10uF CAPACITOR 1210 PACKAGE
capacitor 10uF/63V
smd transistor EK
10uf 63v capacitor
50V 1215MHZ
banana socket datasheet
capacitor 220uF/63V
diode gp 429
DS2346
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MRF5S4140H
Abstract: No abstract text available
Text: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these
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Original
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PDF
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MRF5S4140H
MRF5S4140HR3
MRF5S4140HSR3
28-volt
MRF5S4140HR3
MRF5S4140H
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capacitor 10uF/63V
Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
Text: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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Original
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PDF
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HVV0405-175
EG-01-DS10A
429-HVVi
capacitor 10uF/63V
ds10a
capacitor 100uF 50V
capacitor 1206 63V
hex head screws
10uf 63v capacitor
AB-45
banana socket datasheet
diode gp 429
SMD 1206 RESISTOR 100 OHMS
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MRF5S4140H
Abstract: No abstract text available
Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these
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Original
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PDF
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MRF5S4140H
MRF5S4140HR3
MRF5S4140HSR3
28-volt
MRF5S4140HR3
MRF5S4140H
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capacitor 10uF/63V
Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
Text: The innovative Semiconductor Company! HVV0912-150 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V
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Original
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PDF
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HVV0912-150
429-HVVi
EG-01-DS11B
capacitor 10uF/63V
capacitor 220uF/63V
J152
100 pf, ATC Chip Capacitor
pF CAPACITOR 100v
100b*500x
10uf 63v capacitor
capacitor 1206 63V
ID Innovations
resistor smd 1206 102
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22 pf capacitor datasheet
Abstract: 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3 MRF5S4140HSR3 J0743
Text: RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these
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Original
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PDF
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MRF5S4140HR3
MRF5S4140HSR3
28-volt
MRF5S4140HR3
MRF5S4140H
22 pf capacitor datasheet
100B121JP500X
A114
A115
AN1955
C101
JESD22
MRF5S4140HSR3
J0743
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j0810
Abstract: J0743 j0249 100b1r5jp500x J0313
Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of
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Original
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PDF
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MRF5S4140H
28--volt
IS--95
MRF5S4140HR3
MRF5S4140HSR3
MRF5S4140H
j0810
J0743
j0249
100b1r5jp500x
J0313
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