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Kyocera AVX Components 100B470JP500XTV MLC A/B/R - Custom Tape W/Leader (Alt: 100B470JP500XTV)
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Avnet Americas	100B470JP500XTV	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B470JP500XTV					1 - 10 - 100 - 1000 $3.29 10000 $3.29	Get Quote
TTI	100B470JP500XTV	Reel			500	1 - 10 - 100 - 1000 $3.26 10000 $3.26	Buy Now
Kyocera AVX Components 100B470JP500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B470JP500XT)
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Avnet Americas	100B470JP500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B470JP500XT					1 - 10 - 100 - 1000 $3.81 10000 $3.81	Get Quote
Richardson RFPD	100B470JP500XT				500	1 - 10 - 100 - 1000 $2.77 10000 $2.47	Buy Now
Kyocera AVX Components 100B470JP500XC100 MLC A/B/R - Waffle Pack (Alt: 100B470JP500XC100)
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Avnet Americas	100B470JP500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B470JP500XC100					1 $6.2 10 $5.46 100 $4.64 1000 $4.64 10000 $4.64	Get Quote
TTI	100B470JP500XC100	WAFL	200		100	1 - 10 - 100 $4.64 1000 $4.64 10000 $4.64	Buy Now
Richardson RFPD	100B470JP500XC100				200	1 - 10 - 100 - 1000 $2.77 10000 $2.47	Buy Now
Kyocera AVX Components 100B470JP500XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B470JP500XT1K)
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Avnet Americas	100B470JP500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B470JP500XT1K					1 - 10 - 100 - 1000 $2.64 10000 $2.64	Get Quote
Richardson RFPD	100B470JP500XT1K				1,000	1 - 10 - 100 - 1000 $2.77 10000 $2.47	Buy Now
Kyocera AVX Components 100B470JP500XTV1K Silicon RF Capacitors / Thin Film MLC A/B/R
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Mouser Electronics	100B470JP500XTV1K					1 - 10 - 100 - 1000 $2.64 10000 $2.64	Get Quote

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100B470JP500X Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF6S9130H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier	Original	PDF	MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3
Untitled Abstract: No abstract text available Text: Document Number: MRF6S9045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 MRF6S9045MR1
rf push pull mosfet power amplifier Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 9, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of	Original	PDF	MRF9120 MRF9120LR3 MRF9120 rf push pull mosfet power amplifier
Untitled Abstract: No abstract text available Text: Document Number: MRF6S9060 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF6S9060 MRF6S9060NR1/NBR1. MRF6S9060MR1 MRF6S9060MBR1 MRF6S9060MR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 2, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	PDF	MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130H
FERRITE BEAD 1000 OHM 0805 Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100 Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier	Original	PDF	MW6S010N MW6S010NR1 MW6S010GNR1 FERRITE BEAD 1000 OHM 0805 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
rf push pull mosfet power amplifier Abstract: MRF9120 MRF9120LR3 marking WB4 Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of	Original	PDF	MRF9120 MRF9120LR3 rf push pull mosfet power amplifier MRF9120 MRF9120LR3 marking WB4
MRF6S9045MR1 Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045 Rev. 2, 5/2006 Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1
KME63VB471M12x25LL Abstract: transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HR3 MRF5S9150HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.	Original	PDF	MRF5S9150H MRF5S9150HR3 MRF5S9150HSR3 MRF5S9150HR3 KME63VB471M12x25LL transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HSR3
Untitled Abstract: No abstract text available Text: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE	Original	PDF
MRF9120 Abstract: MRF9120LR3 Text: Document Number: MRF9120 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of	Original	PDF	MRF9120 MRF9120LR3 IS-95 MRF9120 MRF9120LR3
MRF9120 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these	Original	PDF	MRF9120 MRF9120S
uhf 150w mosfet Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346 Text: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V	Original	PDF	HVV0912-150 121eliable. EG-01-DS11A or429-HVVi uhf 150w mosfet 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	PDF	MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130H

MW6S010NR1 Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1 Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier	Original	PDF	MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1
KME63VB Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 0, 10/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	PDF	MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160H KME63VB
HVV1214-140 Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB Text: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain	Original	PDF	HVV1214-140 429-HVVi EG-01-PO22X1 HVV1214-140 L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
mode 5 IFF Abstract: Coaxicom HVV1011-300 RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00 Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V	Original	PDF	HVV1011-300 429-HVVi EG-01-DS02B EG-01-DS02B8 mode 5 IFF Coaxicom RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00
MRF5S9150HSR3 Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9150HR3 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869	Original	PDF	MRF5S9150H MRF5S9150HR3 MRF5S9150HSR3 MRF5S9150HR3 MRF5S9150HSR3 A114 A115 AN1955 C101 JESD22
transformer calculator Abstract: MRF9120LR3 MRF9120R3 rf push pull mosfet power amplifier MRF9120 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these	Original	PDF	MRF9120/D MRF9120R3 MRF9120LR3 transformer calculator MRF9120LR3 rf push pull mosfet power amplifier MRF9120
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9120R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this	Original	PDF	MRF9120/D MRF9120R3 MRF9120/D
Untitled Abstract: No abstract text available Text: >LL'&''# &&#;A EVALUATION KIT )&&MWjji"+&L"'&)&#'&/&C>p RF Power Transistor Part Number: HVV1011-300 Evaluation Kit Part Number: HVV1011-300-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com	Original	PDF	HVV1011-300 HVV1011-300-EK 100B101JP500X J153-ND FXT000158 3-252510RS3394 P242393 SCAS-0440-08C ZSLW-004-M SCAS-0440-12M
A114 Abstract: A115 AN1955 C101 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	PDF	MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3 A114 A115 AN1955 C101 JESD22 MRF6S9130H MRF6S9130HSR3
MRF9120 Abstract: No abstract text available Text: Document Number: MRF9120 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of	Original	PDF	MRF9120 MRF9120LR3 IS-95 MRF9120

100B470JP500X Search Results

100B470JP500X Price and Stock

Kyocera AVX Components 100B470JP500XTV

Kyocera AVX Components 100B470JP500XT

Kyocera AVX Components 100B470JP500XC100

Kyocera AVX Components 100B470JP500XT1K

Kyocera AVX Components 100B470JP500XTV1K

100B470JP500X Datasheets Context Search

Untitled

Untitled

rf push pull mosfet power amplifier

Untitled

Untitled

FERRITE BEAD 1000 OHM 0805

rf push pull mosfet power amplifier

MRF6S9045MR1

KME63VB471M12x25LL

Untitled

MRF9120

MRF9120

uhf 150w mosfet

Untitled

MW6S010NR1

KME63VB

HVV1214-140

mode 5 IFF

MRF5S9150HSR3

transformer calculator

Untitled

Untitled

A114

MRF9120