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Kyocera AVX Components 100B5R6BW500XT1K CAP CER 5.6PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B5R6BW500XT1K	Digi-Reel	2,651		1	1 $9.45 10 $6.602 100 $5.0845 1000 $4.46684 10000 $4.46684	Buy Now
	100B5R6BW500XT1K	Cut Tape	2,651		1	1 $9.45 10 $6.602 100 $5.0845 1000 $4.46684 10000 $4.46684	Buy Now
	100B5R6BW500XT1K	Reel	2,000		1,000	1 - 10 - 100 - 1000 $4.27351 10000 $4.11333	Buy Now
Avnet Americas	100B5R6BW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B5R6BW500XT1K					1 $6.89 10 $5.25 100 $4 1000 $3.29 10000 $3.19	Get Quote
Richardson RFPD	100B5R6BW500XT1K				1,000	1 - 10 - 100 - 1000 $2.54 10000 $2.38	Buy Now
Kyocera AVX Components 100B5R6BW500X MLC A/B/R - Waffle Pack (Alt: 100B5R6BW500X)
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Avnet Americas	100B5R6BW500X	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B5R6BW500XT Multilayer Ceramic Capacitor, 5.6 pF, ? 0.1pF, 500 V, C0G (NP0), 1111 [2828 Metric] - Custom Tape W/Leader (Alt: 100B5R6BW500XT)
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Avnet Americas	100B5R6BW500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B5R6BW500XT		1,627			1 $5.29 10 $4.56 100 $4.2 1000 $3.56 10000 $3.56	Buy Now
TTI	100B5R6BW500XT	Reel			500	1 - 10 - 100 - 1000 $3.52 10000 $3.52	Buy Now
Richardson RFPD	100B5R6BW500XT				500	1 - 10 - 100 - 1000 $2.54 10000 $2.38	Buy Now
Avnet Asia	100B5R6BW500XT			18 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B5R6BW1500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B5R6BW1500XT)
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Avnet Americas	100B5R6BW1500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B5R6BW1500XT					1 - 10 - 100 - 1000 $4.02 10000 $4.02	Get Quote
Kyocera AVX Components 100B5R6BW500XC100 MLC A/B/R - Waffle Pack (Alt: 100B5R6BW500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B5R6BW500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B5R6BW500XC100					1 $6.85 10 $5.94 100 $3.95 1000 $3.95 10000 $3.95	Get Quote
TTI	100B5R6BW500XC100	WAFL			100	1 - 10 - 100 $3.91 1000 $3.91 10000 $3.91	Buy Now
Richardson RFPD	100B5R6BW500XC100		3		100	1 - 10 - 100 $3.68 1000 $2.48 10000 $2.32	Buy Now

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100B5R6BW Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B5R6BW500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 5.6PF 500V P90 1111		Original	PDF
100B5R6BW500XT1K		American Technical Ceramics	Ceramic Capacitor 5.6PF 500V P90 1111		Original	PDF

100B5R6BW Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TH 2190 HOT Transistor Abstract: No abstract text available Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21180EF TH 2190 HOT Transistor	PDF
C1206C104KRAC7800 Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW	PDF
100B101JW Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to	Original	MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3	PDF
C-XM-99-001-01 Abstract: pep cxm MRF21010 Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010 MRF21010LR1 MRF21010LSR1 C-XM-99-001-01 pep cxm	PDF
mosfet j122 Abstract: AGR09085EF J118 MOSFET j122 mosfet AGR09085E AGR09085EU JESD22-C101A RM73B2B120J Text: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 AGR09085E del00 AGR09085EU AGR09085EF mosfet j122 AGR09085EF J118 MOSFET j122 mosfet AGR09085EU JESD22-C101A RM73B2B120J	PDF
AGR09180EF Abstract: JESD22-C101A Text: Preliminary Data Sheet March 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09180EF Hz--895 AGR09180EF DS04-123RFPP DS04-031RFPP) JESD22-C101A	PDF
transistor MARKING NC KRC Abstract: MARKING CODE c26 AGR09130E AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09130E Hz--960 AGR09130E AGR09130EU AGR09130EF transistor MARKING NC KRC MARKING CODE c26 AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP	PDF
TH 2190 HOT Transistor Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21 Text: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	AGR21180EF AGR21180EF AGR19K180U AGR21180XF 12-digit TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A GHZ-21	PDF
Transistor J438 Abstract: MRF21010 100B102JW Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010 MRF21010S Transistor J438 100B102JW	PDF
TH 2190 HOT Transistor Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A Text: Preliminary Data Sheet April 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21180EF AGR21180EF DS04-167RFPP DS04-124RFPP) TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A	PDF
mosfet j122 Abstract: J118 MOSFET j122 mosfet ALT500 Text: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 iGR09085EF DS04-055RFPP DS04-028RFPP) mosfet j122 J118 MOSFET j122 mosfet ALT500	PDF
MRF21010 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010 MRF21010LR1 MRF21010LSR1	PDF
MRF21010R1 Abstract: 567 tone MRF21010 MRF21010LSR1 100B102JW Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110	Original	MRF21010/D MRF21010R1 MRF21010LSR1 MRF21010R1 567 tone MRF21010 MRF21010LSR1 100B102JW	PDF
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index	PDF

MRF21010 Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010/D MRF21010R1 MRF21010SR1 MRF21010R1 MRF21010 MRF21010SR1 sot-23 macom 100B5R6B	PDF
10ACPR Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010LR1 MRF21010LSR1 10ACPR	PDF
AGR09180EF Abstract: JESD22-C101A transistor z14 L Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global	Original	AGR09180EF Hz--895 AGR09180EF suit-20 AGR19K180U JESD22-C101A transistor z14 L	PDF
capacitor 2200 micro M Abstract: chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LR1 MRF21010LSR1 macom marking Text: Document Number: MRF21010 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFETs 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs	Original	MRF21010 MRF21010LR1 MRF21010LSR1 MRF21010LR1 capacitor 2200 micro M chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LSR1 macom marking	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 delivering10-12, DS04-055RFPP DS04-028RFPP)	PDF
Untitled Abstract: No abstract text available Text: DRAFT COPY ONLY Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 ca1212 DS04-028RFPP DS03-057RFPP)	PDF
j792 Abstract: TH 2190 HOT Transistor Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21180EF DS04-124RFPP DS02-275RFPP) j792 TH 2190 HOT Transistor	PDF
z921 Abstract: No abstract text available Text: DRAFT COPY ONLY Preliminary Data Sheet September 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 c2000, DS03-057RFPP DS01-209RFPP) z921	PDF
MRF21010 Abstract: MRF21010LR1 MRF21010LSR1 Vishay Capacitor marking Text: Freescale Semiconductor Technical Data Document Number: MRF21010 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF21010 MRF21010LR1 MRF21010LSR1 MRF21010LR1 MRF21010 MRF21010LSR1 Vishay Capacitor marking	PDF
capacitor 2200 micro M Abstract: MRF21010LR1 MRF21010LSR1 08053G105ZATEA MRF21010 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Freescale Semiconductor, Inc.	Original	MRF21010/D MRF21010LR1 MRF21010LSR1 MRF21010LR1 capacitor 2200 micro M MRF21010LSR1 08053G105ZATEA MRF21010	PDF

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Kyocera AVX Components 100B5R6BW500XT1K

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100B5R6BW Datasheets (2)

100B5R6BW Datasheets Context Search

TH 2190 HOT Transistor

C1206C104KRAC7800

100B101JW

C-XM-99-001-01

mosfet j122

AGR09180EF

transistor MARKING NC KRC

TH 2190 HOT Transistor

Transistor J438

TH 2190 HOT Transistor

mosfet j122

MRF21010

MRF21010R1

2a258 transistor

MRF21010

10ACPR

AGR09180EF

capacitor 2200 micro M

Untitled

Untitled

j792

z921

MRF21010

capacitor 2200 micro M