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    100EC Search Results

    100EC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CST4835-100EC Coilcraft Inc Current Sense Transformer Visit Coilcraft Inc
    R5F100ECDNA#W0 Renesas Electronics Corporation Low Power, High Function Microcontrollers for General Purpose Applications Visit Renesas Electronics Corporation
    R5F100ECGNA#20 Renesas Electronics Corporation Low Power, High Function Microcontrollers for General Purpose Applications Visit Renesas Electronics Corporation
    R5F100ECGNA#40 Renesas Electronics Corporation Low Power, High Function Microcontrollers for General Purpose Applications Visit Renesas Electronics Corporation
    R5F100ECGNA#U0 Renesas Electronics Corporation Low Power, High Function Microcontrollers for General Purpose Applications Visit Renesas Electronics Corporation
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    Microchip Technology Inc MCP6C04T-100E/CHY

    IC CURR SENSE 1 CIRCUIT SOT23-6
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    DigiKey MCP6C04T-100E/CHY Cut Tape 1,196 1
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    Avnet Americas MCP6C04T-100E/CHY Reel 5 Weeks 3,000
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    Mouser Electronics MCP6C04T-100E/CHY 1,754
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    Microchip Technology Inc MCP6C04T-100E/CHY 10,741
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    TME MCP6C04T-100E/CHY 1
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    NAC MCP6C04T-100E/CHY 6,000 1
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    Avnet Silica MCP6C04T-100E/CHY 7 Weeks 3,000
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    Master Electronics MCP6C04T-100E/CHY
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    JRH Electronics 805-005-07M21-100EC

    Triple-Start Mighty Mouse Circul
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    DigiKey 805-005-07M21-100EC 163 1
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    JRH Electronics 805-005-07MT21-100EC

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    DigiKey 805-005-07MT21-100EC 163 1
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    JRH Electronics 805-067-07NF21-100EC

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    DigiKey 805-067-07NF21-100EC 150 1
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    JRH Electronics 805-005-02ZC21-100EC

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    DigiKey 805-005-02ZC21-100EC 146 1
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    100EC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Type 150 Axial Leaded Metallized Polyester Flame Retardant Wrap and Fill Axial Leaded Capacitors The Type 150 series axial lead metallized polyester capacitors are available in bulk or on tape and reel for automatic insertion. The tape wrap and fill construction


    Original     		PDF UL510 UL94V-0 Dielectri14 Vdc/200 Vdc/250 Vdc/220

    Untitled

    Abstract: No abstract text available
    Text: Voltage Range 6.8 - 400 Volts 1500 Watt Peak Puise Power 20 Watt Steady State @ 75 °C 15 Watt Steady State @ 100eC FEATURES * * * * * * * Glass Passivated Junction 1500 Watt surge capability at 1 mS Typically IR less than 5uA above 10V Excellent clamping capability


    OCR Scan     		PDF -55eC 175eC

    Untitled

    Abstract: No abstract text available
    Text: n C MECHANICAL: A 1 3 - 5 0^0 4 — 100EC20M V L LR MATERIALS: -HOUSING - THERMOPLASTIC PET POLYESTER FLAMMABILITY RATING UL 94V-0. -SHIELD - .010" THICK, C26800 B R A S S PREPLATED WITH 30nlNCH MIN SEMI-BRIGHT NICKEL, SOLDER TABS POST DIPPED WITH lOO^INCH MIN SAC SOLDER.


    OCR Scan     		PDF 100EC20M C26800 30nlNCH 80nlNCH MA645

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CMPNTSt OPTO 44E D SIEMENS • â23b32b DGGLtcîM4 4 M S IE X LS K380 YELLOW LY K380 GREEN LG K380 HIGH EFFICIENCY RED T1 ARGUS LED LAMP *r- m -23 Package Dimensions in Inches mm 8w f*c *ro tlM è K S Ì sam» .142(3$} .126(3.2). -“ i01) «uo«)\


    OCR Scan     		PDF 23b32b Ifs15

    gs 1117 ax

    Abstract: VN66 TN0610L VN0606M
    Text: Tem ic snlconlx_ TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (Q) V c S (th ) (V ) I d (A) TN0601L 1.8 @ V os = 10 V 0.5 to 2 0.47 VN0606L 3 @ V gs = 10 V 0.8 to 2 0.33


    OCR Scan     		PDF TN0601L, VN0606L/M, VN66AFD TN0601L VN0606L VN0606M VN66AFD O-237 P-37992--Rev. gs 1117 ax VN66 TN0610L

    PIV-1000

    Abstract: BYT230PIV-1000 DIODE M4 marking BYT230PIV1000 BYT231PIV-1000 IR diodes 0B
    Text: BYT230PIV-1000 BYT231PIV-1000 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS If a V v rrm V f (max) trr (max) 2 x 30 A 1000 V 1.8 V K2 A2 A2 l° ^ i K1 K1 M ' A1 K2 BYT231 PIV-1000 A1 i BYT230PIV-1000 80 ns FEATURES AND BENEFITS • ■ ■


    OCR Scan     		PDF BYT230PIV-1000 BYT231 PIV-1000 DIODE M4 marking BYT230PIV1000 BYT231PIV-1000 IR diodes 0B

    Untitled

    Abstract: No abstract text available
    Text: 800, 801 SERIES RECTIFIER ASSEMBLIES Three Phase Bridges, 20-40 Amp, High Efficiency, ESP D ESCRIPTION This series of three phase bridges offers the highest efficiency possible for applications where nothing else will do. The series allows operation at full


    OCR Scan     		PDF

    power diode with piv of 30v

    Abstract: 688-10R
    Text: 688 SERIES RECTIFIER ASSEMBLIES High Voltage Stacks, Standard and Fast Recovery FEATURES DESCRIPTION • • • • • • • T h is series of high power sta c k s h a s a unique p a cka gin g d esign that provides ch a ra cteristics not obtainable in conven­


    OCR Scan     		PDF 500ns power diode with piv of 30v 688-10R

    943P

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBF0201N/D SEMICONDUCTOR TECHNICAL DATA Low rDS on Small-Signal MOSFETb TMOS Single N-Channel Field Effect Transistors MMBF0 2 0 1 N Motore)! Puffernd Dtvio« N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET rD 8(on)-1-0 OHM These miniature surface mount MOSFETb utilize Motorola's High


    OCR Scan     		PDF MMBF0201N/D OT-23 943P

    EAKD

    Abstract: BUW12A
    Text: MOTOROLA SC XSTRS/R F 1HE D I I b3b?2S4 QüôM'iai 1 I MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA BUW 11,A BUW 12,A Designer's Data Sheet N P N Silicon Pow er Transistors Switchm ode Series These transistors are designed for high-voltage, high-speed, power switching in induc­


    OCR Scan     		PDF C0NTH01UNG O-218AC EAKD BUW12A

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


    OCR Scan     		PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    B85 diode

    Abstract: DIODE B89 IRGPC50KD2
    Text: 09/01/94 1 1 ;IS i 57 I n t e r n a t 'I R e c tifie r - > Product In fo rn ai ion Page 002 P D - 9.1123 International S Rectifier IRGPC50KD2 Short Circuit Rated UHraFasl CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFASI SOF T RECOVERY DIODE Features


    OCR Scan     		PDF IRGPC50KD2 -10jj3 O-247AC B85 diode DIODE B89 IRGPC50KD2

    5360-J

    Abstract: 5360-K lg diode C 5360 LYS360-H LG 42 t 5360-FJ 5360-DG 5360 5360E
    Text: SIEMENS AKTIENGESELLSCHAF 47E D • fl23SbQS 0DS7131 T m i l SIEM EN S re d SUPER-RED YELLOW GREEN LR LS LY LG 5360 5360 5360 5360 T 1 3/4 5 m m LED LAMP Package Dimensions mm A p p ro x w e ig h t 0 ,3 5 g FEATURES * High Light Output * Diffused Lens * Wide Viewing Angie 70°


    OCR Scan     		PDF fl23SbOS T13/4 5360-DG 5360-GK 5360-E LYS360-H 5360-F 5360-HL 5360-FJ 5360-J 5360-K lg diode C 5360 LG 42 t 5360 5360E

    Untitled

    Abstract: No abstract text available
    Text: M O TO ROLA SEM IC O N D U C T O R TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N -C h a n n e l E n h a n c e m e n t-M o d e S ilic o n G a te T M O S TM O S POWER FET 15 AMPERES This TM O S Pow er FET is designed fo r m e d iu m voltag e , high


    OCR Scan     		PDF MTP15N15 21A-04 O-220AB

    MOSFET IRF 570

    Abstract: IRF 511 MOSfet irf510 Motorola transistor irf510 IRF510-513 power mosfet irf511 IRF*125 IRF511 MOSFET Transistor motorola 513 511 MOSFET TRANSISTOR motorola
    Text: MOTOROLA IRF510 IRF511 IRF512 IRF513 SEMICONDUCTOR TECHNICAL DATA Part Num ber v Ds N-CHANNEL ENHANCEMENT-MO DE SILICON GATE T M O S POWER FIELD EFFECT TRANSISTOR IRF510 100 V 0.6 n IRF511 60 V 0.6 0 4.0 A These TM OS Power FETs are designed for low voltage, high


    OCR Scan     		PDF IRF510 IRF511 IRF512 IRF513 MOSFET IRF 570 IRF 511 MOSfet irf510 Motorola transistor irf510 IRF510-513 power mosfet irf511 IRF*125 IRF511 MOSFET Transistor motorola 513 511 MOSFET TRANSISTOR motorola

    CD4019

    Abstract: mc14519b
    Text: 'MOTOROLA SC {LOGIC} ifi I>F| fc,3b?552 OO?"!?!? 1 ,6367252 ^MOTOROLA SC. LOGIC 9 8 D 79717 D r-t> 7 ~ /h £ / MC14519B MOTOROLA CMOS MSI 4-BIT AND/OR SELECTOR (LO W PO W ER C O M P L E M E N T A R Y MOS) or QUAD 2-CHANNEL DATA SELECTOR or 4-BIT AND/OR SELECTOR


    OCR Scan     		PDF MC14519B C14519B CD4019 mc14519b

    2N5640

    Abstract: 2N5638 2N5639 MOTOROLA 2N5639
    Text: 2N5638 thru 2N5640 CASE 29-04, STYLE 5 TO-92 TO-226AA M A X IM U M R A T IN G S S ym bol Value U n it Drain-Source Voltage Vd S 30 Vdc Drain-Gate Voltage Vq G 30 Vdc V g SR 30 Vdc 'g f 10 m Adc PD 350 2.8 mW m W 'C Junction T em perature Range Tj - 6 5 to ^ 150


    OCR Scan     		PDF 2N5638 2N5640 O-226AA) MPF4391 2N5638 2N5639 2N5640 2N5639 MOTOROLA

    nec en8

    Abstract: REF02 REF01 REF-01 LT1019 LT1021 REF-01A REF-02 REF-02A REF-02E
    Text: REF-01/REF-02 / T L i n t A ß TECHNOLOGY Precision Voltage References F€RTUft€S D€SCRIPTIOn • Trimmed Output ± 0 .3 % The REF-01/REF-02 are precision 10V and 5V bandgap references which provide stable output voltages over a ■ Low Drift—5ppm/°C Typical


    OCR Scan     		PDF REF-Ol/REF-02 REF-02 REF-01/REF-02 REF-01 REF-02 350iQ 045-tOOIS 130-C/W nec en8 REF02 REF01 LT1019 LT1021 REF-01A REF-02A REF-02E

    LM13080N

    Abstract: LM13080 12v electronic flasher without relay LM1308 LM 13080 N
    Text: LM13080 EH National â t f Semiconductor LM13080 Programmable Power Operational Amplifier General Description The LM13080 is an internally compensated medium power operational amplifier designed for use in those applications requiring load currents of several hundred milliamperes.


    OCR Scan     		PDF LM13080 LM13080 TL/H/7978-13 LM13080N 12v electronic flasher without relay LM1308 LM 13080 N

    5517N

    Abstract: 295 da hen ne 5517AN
    Text: N E 5517 /5 5 1 7A Dual Operational Transconductance Amplifier Product Specification DESCRIPTION FEATURES T h e N E 5 5 1 7 c o n t a in s t w o c u r r e n t- c o n ­ • Constant impedance buffers • AVbe of buffer is constant with amplifier Ibias change


    OCR Scan     		PDF NE5517 NE5517/5517A 5517N 295 da hen ne 5517AN

    MTD3055E

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F bf l E T> • b3h72SM 00^0535 330 MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD3055E TMOS IV N-Channel Enhancement-Mode Motorola Preferred Device Power Field Effect Transistor D PAK for Surface or Insertion Mount


    OCR Scan     		PDF b3h72SM MTD3055E DGT654G MTD3055E

    350AB

    Abstract: BF930 2291C 400R392U100AC8 400X1 400R821U450BE8
    Text: RADIAL LEADED CAPACITORS Long Life High Ripple Computer Grade, 95°C Type 400-Standard/Type 400X-Max Cap/Type 400R-Max Ripple Designed for minicomputers and other long life power supply filte r applications, type 400 delivers nearly the capacitance o f the type 4CM b u t with 2 to 3 times the


    OCR Scan     		PDF 400-Standard/Type 400X-Max 400R-Max 400R681U450BD 400R821U450BE8 400X112U 450EC8 400X212U450BF8 400R560U450AK8 350AB BF930 2291C 400R392U100AC8 400X1

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ^ .19 IOC CE RIGHTS ^SERVED. □IST 16 REVISIONS DESCRIPTION LTR APVO DATE REVISE PER OAOO-0661 - 0 0 CK KC 07AUGOO D D 25.00±0.30 [985.25±1 1.81] 0.56±0.03 22.05± 1.18]


    OCR Scan     		PDF OAOO-0661 07AUGOO 09N0V98 I0DEC96 100EC96 23FEB9S