100MJ Search Results

100MJ Result Highlights (5)

Part	Manufacturer	Description
R5F100MJAFA#X0	Renesas Electronics Corporation	Low Power, High Function Microcontrollers for General Purpose Applications
R5F100MJDFA#30	Renesas Electronics Corporation	Low Power, High Function Microcontrollers for General Purpose Applications
R5F100MJDFA#V0	Renesas Electronics Corporation	Low Power, High Function Microcontrollers for General Purpose Applications
R5F100MJGFA#V0	Renesas Electronics Corporation	Low Power, High Function Microcontrollers for General Purpose Applications
R5F100MJDFB#X0	Renesas Electronics Corporation	Low Power, High Function Microcontrollers for General Purpose Applications

100MJ Price and Stock

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TAIYO YUDEN NRS8040T100MJGJV FIXED IND 10UH 3.1A 44.2MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NRS8040T100MJGJV	Cut Tape	10,862		1	1 $0.57 10 $0.444 100 $0.3448 1000 $0.28864 10000 $0.28864	Buy Now
	NRS8040T100MJGJV	Digi-Reel	10,862		1	1 $0.57 10 $0.444 100 $0.3448 1000 $0.28864 10000 $0.28864	Buy Now
	NRS8040T100MJGJV	Reel	10,000		1,000	1 - 10 - 100 - 1000 $0.26729 10000 $0.2066	Buy Now
Avnet Americas	NRS8040T100MJGJV	Reel	10,000	9 Weeks	1,000	1 - 10 - 100 - 1000 $0.2 10000 $0.2	Buy Now
Newark	NRS8040T100MJGJV	Cut Tape			1,000	1 - 10 - 100 - 1000 $0.348 10000 $0.348	Buy Now
	NRS8040T100MJGJV	Reel			1,000	1 $0.282 10 $0.282 100 $0.282 1000 $0.282 10000 $0.255	Buy Now
Bristol Electronics	NRS8040T100MJGJV		4,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	NRS8040T100MJGJV		2,000			1 - 10 - 100 - 1000 $0.2545 10000 $0.2283	Buy Now
Murata Manufacturing Co Ltd LQH3NPN100MJRL FIXED IND 10UH 530MA 288MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LQH3NPN100MJRL	Reel	4,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.12883	Buy Now
Avnet Americas	LQH3NPN100MJRL	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $0.12122	Buy Now
Newark	LQH3NPN100MJRL	Cut Tape	6,753		5	1 $0.385 10 $0.385 100 $0.385 1000 $0.385 10000 $0.385	Buy Now
TME	LQH3NPN100MJRL		3,990		10	1 - 10 $0.248 100 $0.124 1000 $0.09 10000 $0.083	Buy Now
Chip 1 Exchange	LQH3NPN100MJRL		13,211			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Abacus	LQH3NPN100MJRL		166,000	41 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip Stock	LQH3NPN100MJRL		80,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	LQH3NPN100MJRL		800,000			1 - 10 - 100 - 1000 $0.2012 10000 $0.1688	Buy Now
United Chemi-Con Inc EKMQ351ELL100MJC5S CAP ALUM 10UF 20% 350V RADIAL TH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EKMQ351ELL100MJC5S	Bulk	4,000		1	1 $0.71 10 $0.428 100 $0.2818 1000 $0.2227 10000 $0.16999	Buy Now
Master Electronics	EKMQ351ELL100MJC5S					1 - 10 - 100 - 1000 $0.4994 10000 $0.4567	Buy Now
Vishay Dale CRCW1206100MJPTAHR RES SMD 100M OHM 5% 1/4W 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CRCW1206100MJPTAHR	Digi-Reel	3,988		1	1 $0.89 10 $0.527 100 $0.3445 1000 $0.24566 10000 $0.24566	Buy Now
	CRCW1206100MJPTAHR	Cut Tape	3,988		1	1 $0.89 10 $0.527 100 $0.3445 1000 $0.24566 10000 $0.24566	Buy Now
Vishay Dale RCV2010100MJNEF RCV2010 200 100M 5% E02 E3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RCV2010100MJNEF	Cut Tape	3,930		1	1 $0.87 10 $0.497 100 $0.3175 1000 $0.22823 10000 $0.22823	Buy Now
	RCV2010100MJNEF	Digi-Reel	3,930		1	1 $0.87 10 $0.497 100 $0.3175 1000 $0.22823 10000 $0.22823	Buy Now

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100MJ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SK3043 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2	Original	2SK3043 100mJ O-220D 2SK3043	PDF
Untitled Abstract: No abstract text available Text: 2SK2123 Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 100mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications	Original	2SK2123 100mJ O-220E	PDF
MJ 1503 Abstract: No abstract text available Text: Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 40ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na	Original	2SK2126 100mJ MJ 1503	PDF
Untitled Abstract: No abstract text available Text: Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na	Original	2SK2123 100mJ	PDF
2SK2126 Abstract: No abstract text available Text: Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 40ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm	Original	2SK2126 100mJ 2SK2126	PDF
2SK2123 Abstract: No abstract text available Text: Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2	Original	2SK2123 100mJ O-220E 2SK2123	PDF
2SK2924 Abstract: No abstract text available Text: Power F-MOS FETs 2SK2924 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm	Original	2SK2924 100mJ O-220E 2SK2924	PDF
Untitled Abstract: No abstract text available Text: Power F-MOS FETs 2SK2924 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 15.0±0.3 ■ Applications	Original	2SK2924 100mJ	PDF
2SK2123 Abstract: No abstract text available Text: Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm	Original	2SK2123 100mJ O-220E 2SK2123	PDF
2SK2924 Abstract: No abstract text available Text: Power F-MOS FETs 2SK2924 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 +0.5 13.7–0.2 ● Contactless relay	Original	2SK2924 100mJ O-220E 2SK2924	PDF
Untitled Abstract: No abstract text available Text: 2SK2126 Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 100mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications	Original	2SK2126 100mJ O-220E	PDF
100MJ Abstract: 2SK2126 Text: Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 40ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2	Original	2SK2126 100mJ O-220E 100MJ 2SK2126	PDF
2SK3043 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2	Original	2SK3043 100mJ O-220D 2SK3043	PDF
2SK2126 Abstract: No abstract text available Text: Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 40ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2	Original	2SK2126 100mJ O-220E 2SK2126	PDF

NS 12575T 6R8MN Abstract: hioki 3200 hp 4192a nrs8030 NRS4018 NRV2012T NRS4018T220MDGJ 470MN NRS5024T4R7MMGJ NS 12565T 680MN Text: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2011. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.	Original	mlci0109 reli-PRP16 NS 12575T 6R8MN hioki 3200 hp 4192a nrs8030 NRS4018 NRV2012T NRS4018T220MDGJ 470MN NRS5024T4R7MMGJ NS 12565T 680MN	PDF
mosfet to ignition coil Abstract: IGBT DRIVER Analog Devices IGBT DRIVER ignition coil automotive ignition IGBTS automotive ignition coil on plug injector MOSFET driver ignition driver MC33810 ignition coil RSN 310 R 36 Text: Freescale Semiconductor Advance Information Document Number: MC33810 Rev. 6.0, 12/2008 Automotive Engine Control IC 33810 The 33810 is an eight channel output driver IC intended for automotive engine control applications. The IC consists of four integrated low side drivers and four low side gate pre-drivers. The low	Original	MC33810 mosfet to ignition coil IGBT DRIVER Analog Devices IGBT DRIVER ignition coil automotive ignition IGBTS automotive ignition coil on plug injector MOSFET driver ignition driver MC33810 ignition coil RSN 310 R 36	PDF
NRS5040T Abstract: NRH3010 NRS8040 NRS5024 NRS6028 NRH2412 NRS4018 NRS5024T4R7MMGJ 220MMGK NRS2012 Text: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2011. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.	Original	wound0407 NRS5040T NRH3010 NRS8040 NRS5024 NRS6028 NRH2412 NRS4018 NRS5024T4R7MMGJ 220MMGK NRS2012	PDF
kxj series 450 Abstract: KXG capacitor ekxg401e220mk20s 400V KXG 82 CAPACITOR 105 100uF 400V Electrolytic Capacitor 105 Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS 160 to 450Vdc long life, 105℃ KXJ ●For electronic ballast circuits and other long life applications ●Endurance with ripple current : 8,000 to 10,000 hours at 105℃ ●Non solvent resistant type ● RoHS Compliant	Original	450Vdc 400Vdc) 450Vdc) 450Vdc 120Hz) E1001L kxj series 450 KXG capacitor ekxg401e220mk20s 400V KXG 82 CAPACITOR 105 100uF 400V Electrolytic Capacitor 105	PDF
ISL9G1260EG3 Abstract: ISL9G1260EP3 ISL9G1260ES3 ISL9G1260ES3T Text: ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3 Data Sheet January 2002 600V, SMPS II LGC Series N-Channel IGBT Features The ISL9G1260EG3, ISL9G1260EP3 and ISL9G1260ES3 are Low Gate Charge LGC SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs with lower gate	Original	ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3 ISL9G1260EP3 100kHz ISL9G1260EG3 ISL9G1260ES3 ISL9G1260ES3T	PDF
EKLJ401E390MM20S Abstract: EKLJ401E330ML20S Text: 小型铝电解电容器小型化系列引线型・对应异常电压（105℃） RoHS指令适应品ＫＬＪ ● 加载过电压时防止引起火花。 ● 保证 105℃ 2,000 小时。纹波叠加 ESR 值。 ● 请注意不属于基板清洗类型。	Original	C1001K 01E390MJ25S EKLJ201E560MK20S EKLJ201E820MK25S EKLJ201E101ML20S EKLJ201E121ML25S EKLJ201E151MM20S EKLJ201E181MLN3S EKLJ201E181MM25S EKLJ201E221MLP1S EKLJ401E390MM20S EKLJ401E330ML20S	PDF
ESMQ500E100ME11D Abstract: ESMQ630E332MN40S ESMQ630E101MHB5D eSmq6r3e222mj16s ESMQ250E471MJC5S ESMQ401E3R3MHB5D ESMQ160E222MJ20S esmq250e331mhb5d Text: 小型铝电解电容器 RoHS指令适应品小型化系列引线型・小型化品（85℃）ＳＭＱ SMG 系列小型化品。 85℃ 2,000 小时。 ● 请注意不属于基板清洗类型。 ● 小型化 ● 保证ＳＭＧ ◆规格表项目	Original	ESMQ401E3R3MHB5D ESMQ401E4R7MJC5S ESMQ401E100MJ16S ESMQ401E220MK25S ESMQ401E330ML25S ESMQ401E470ML25S ESMQ401E680MLN3S ESMQ401E101MMP1S ESMQ451E2R2MHB5D ESMQ451E3R3MJC5S ESMQ500E100ME11D ESMQ630E332MN40S ESMQ630E101MHB5D eSmq6r3e222mj16s ESMQ250E471MJC5S ESMQ401E3R3MHB5D ESMQ160E222MJ20S esmq250e331mhb5d	PDF
ESMG500E101MHB5D Abstract: 1001N ESMG500E102MK25S ESMG500 ESMG500E ESMG250E472MLN3S Text: リード形・小形化標準品（85℃）標準品 ● ● 耐洗浄 RoHS指令適合品 SMQ ~ 250V 85℃ 2,000 時間保証。 315 ∼ 450Vdc は基板洗浄タイプではありませんのでご注意下さい。 dc 小形化 SMG ◆規格表項目	Original	450Vdc 3400Vdc-2585 3450Vdc 3100Vdc 03CV4A 120Hz 160450Vdc 1CV40 03CV15 ESMG500E101MHB5D 1001N ESMG500E102MK25S ESMG500 ESMG500E ESMG250E472MLN3S	PDF
2n6325 Abstract: 2N6323 on 5297 transistor 2N6322 2N6324 NS2N Text: TYPES 2N6322 THRU 2N6325 N-P-N SILICON POWER TRANSISTORS TYPES 2N6322 THRU 2N6325 BULLETIN NO. DL-S 7211589, JANUARY HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M ILIT A R Y APPLICATIONS • 100-mJ Reverse-Energy Rating • 30-A Rated Continuous Collector Current	OCR Scan	2N6322 2N6325 100-mJ 2N6323, 2N6325) 2N6322. 2N6323 2N6324, 2N6323 on 5297 transistor 2N6324 NS2N	PDF
Untitled Abstract: No abstract text available Text: TPIC6E175 POWER LOGIC EEPROM-PROGRAMMABLE QUAD D-TYPE LATCH SLIS052 - NO VEM BER 1995 NE PACKAGE TOP VIEW Programmable-PWM Current Threshold Programmable-PWM Frequency Controlled by Internal or External Oscillator O S C /V E R [ 1 DRAIN1 [ 2 Integrated Output Recirculation Clamp	OCR Scan	TPIC6E175 SLIS052 nbl724	PDF

100MJ Search Results

100MJ Result Highlights (5)

100MJ Price and Stock

TAIYO YUDEN NRS8040T100MJGJV

Murata Manufacturing Co Ltd LQH3NPN100MJRL

United Chemi-Con Inc EKMQ351ELL100MJC5S

Vishay Dale CRCW1206100MJPTAHR

Vishay Dale RCV2010100MJNEF

100MJ Datasheets Context Search

2SK3043

Untitled

MJ 1503

Untitled

2SK2126

2SK2123

2SK2924

Untitled

2SK2123

2SK2924

Untitled

100MJ

2SK3043

2SK2126

NS 12575T 6R8MN

mosfet to ignition coil

NRS5040T

kxj series 450

ISL9G1260EG3

EKLJ401E390MM20S

ESMQ500E100ME11D

ESMG500E101MHB5D

2n6325

Untitled