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    100MJ Search Results

    100MJ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R5F100MJAFA#X0 Renesas Electronics Corporation Low Power, High Function Microcontrollers for General Purpose Applications Visit Renesas Electronics Corporation
    R5F100MJDFA#30 Renesas Electronics Corporation Low Power, High Function Microcontrollers for General Purpose Applications Visit Renesas Electronics Corporation
    R5F100MJDFA#V0 Renesas Electronics Corporation Low Power, High Function Microcontrollers for General Purpose Applications Visit Renesas Electronics Corporation
    R5F100MJGFA#V0 Renesas Electronics Corporation Low Power, High Function Microcontrollers for General Purpose Applications Visit Renesas Electronics Corporation
    R5F100MJDFB#X0 Renesas Electronics Corporation Low Power, High Function Microcontrollers for General Purpose Applications Visit Renesas Electronics Corporation
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    100MJ Price and Stock

    Vishay Dale CRCW1206100MJPEAHR

    RES SMD 100M OHM 5% 1/4W 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CRCW1206100MJPEAHR Digi-Reel 64,603 1
    • 1 $0.75
    • 10 $0.398
    • 100 $0.2352
    • 1000 $0.15296
    • 10000 $0.15296
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    CRCW1206100MJPEAHR Cut Tape 64,603 1
    • 1 $0.75
    • 10 $0.398
    • 100 $0.2352
    • 1000 $0.15296
    • 10000 $0.15296
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    CRCW1206100MJPEAHR Reel 60,000 5,000
    • 1 -
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    • 100 -
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    • 10000 $0.0825
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    Vishay Dale CRCW0805100MJPEAHR

    RES SMD 100M OHM 5% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CRCW0805100MJPEAHR Cut Tape 43,818 1
    • 1 $0.47
    • 10 $0.256
    • 100 $0.1562
    • 1000 $0.10715
    • 10000 $0.10715
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    CRCW0805100MJPEAHR Digi-Reel 43,818 1
    • 1 $0.47
    • 10 $0.256
    • 100 $0.1562
    • 1000 $0.10715
    • 10000 $0.10715
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    CRCW0805100MJPEAHR Reel 40,000 5,000
    • 1 -
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    • 10000 $0.08247
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    Vishay Dale RCV2010100MJNEF

    RCV2010 200 100M 5% E02 E3
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    DigiKey RCV2010100MJNEF Cut Tape 3,950 1
    • 1 $0.87
    • 10 $0.497
    • 100 $0.3175
    • 1000 $0.22823
    • 10000 $0.22823
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    RCV2010100MJNEF Digi-Reel 3,950 1
    • 1 $0.87
    • 10 $0.497
    • 100 $0.3175
    • 1000 $0.22823
    • 10000 $0.22823
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    United Chemi-Con Inc EKXG201ELL100MJ16S

    CAP ALUM 10UF 20% 200V RADIAL TH
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    DigiKey EKXG201ELL100MJ16S Bulk 2,945 1
    • 1 $0.81
    • 10 $0.492
    • 100 $0.3271
    • 1000 $0.26028
    • 10000 $0.20065
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    Newark EKXG201ELL100MJ16S Bulk 204 1
    • 1 $0.639
    • 10 $0.465
    • 100 $0.32
    • 1000 $0.248
    • 10000 $0.229
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    Master Electronics EKXG201ELL100MJ16S 23,725
    • 1 -
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    • 100 $0.3877
    • 1000 $0.2597
    • 10000 $0.1829
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    United Chemi-Con Inc EKXG401ETD100MJ20S

    CAP ALUM 10UF 20% 400V RADIAL TH
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    DigiKey EKXG401ETD100MJ20S Cut Tape 1,525 1
    • 1 $1.02
    • 10 $0.63
    • 100 $0.4242
    • 1000 $0.4242
    • 10000 $0.4242
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    EKXG401ETD100MJ20S Ammo Pack 800 800
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    • 10000 $0.26116
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    Master Electronics EKXG401ETD100MJ20S 2,304
    • 1 -
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    • 100 $0.6944
    • 1000 $0.3674
    • 10000 $0.2402
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    Find more 100MJ price and stock on Findchips.com

    100MJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3043

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


    Original     		PDF 2SK3043 100mJ O-220D 2SK3043

    Untitled

    Abstract: No abstract text available
    Text: 2SK2123 Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 100mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications


    Original     		PDF 2SK2123 100mJ O-220E

    MJ 1503

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 40ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na


    Original     		PDF 2SK2126 100mJ MJ 1503

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na


    Original     		PDF 2SK2123 100mJ

    2SK2126

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 40ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm


    Original     		PDF 2SK2126 100mJ 2SK2126

    2SK2123

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2


    Original     		PDF 2SK2123 100mJ O-220E 2SK2123

    2SK2924

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2924 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm


    Original     		PDF 2SK2924 100mJ O-220E 2SK2924

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2924 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 15.0±0.3 ■ Applications


    Original     		PDF 2SK2924 100mJ

    2SK2123

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm


    Original     		PDF 2SK2123 100mJ O-220E 2SK2123

    2SK2924

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2924 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 +0.5 13.7–0.2 ● Contactless relay


    Original     		PDF 2SK2924 100mJ O-220E 2SK2924

    Untitled

    Abstract: No abstract text available
    Text: 2SK2126 Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 100mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications


    Original     		PDF 2SK2126 100mJ O-220E

    100MJ

    Abstract: 2SK2126
    Text: Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 40ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2


    Original     		PDF 2SK2126 100mJ O-220E 100MJ 2SK2126

    2SK3043

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


    Original     		PDF 2SK3043 100mJ O-220D 2SK3043

    2SK2126

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 40ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2


    Original     		PDF 2SK2126 100mJ O-220E 2SK2126

    NS 12575T 6R8MN

    Abstract: hioki 3200 hp 4192a nrs8030 NRS4018 NRV2012T NRS4018T220MDGJ 470MN NRS5024T4R7MMGJ NS 12565T 680MN
    Text: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2011. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.


    Original     		PDF mlci0109 reli-PRP16 NS 12575T 6R8MN hioki 3200 hp 4192a nrs8030 NRS4018 NRV2012T NRS4018T220MDGJ 470MN NRS5024T4R7MMGJ NS 12565T 680MN

    mosfet to ignition coil

    Abstract: IGBT DRIVER Analog Devices IGBT DRIVER ignition coil automotive ignition IGBTS automotive ignition coil on plug injector MOSFET driver ignition driver MC33810 ignition coil RSN 310 R 36
    Text: Freescale Semiconductor Advance Information Document Number: MC33810 Rev. 6.0, 12/2008 Automotive Engine Control IC 33810 The 33810 is an eight channel output driver IC intended for automotive engine control applications. The IC consists of four integrated low side drivers and four low side gate pre-drivers. The low


    Original     		PDF MC33810 mosfet to ignition coil IGBT DRIVER Analog Devices IGBT DRIVER ignition coil automotive ignition IGBTS automotive ignition coil on plug injector MOSFET driver ignition driver MC33810 ignition coil RSN 310 R 36

    NRS5040T

    Abstract: NRH3010 NRS8040 NRS5024 NRS6028 NRH2412 NRS4018 NRS5024T4R7MMGJ 220MMGK NRS2012
    Text: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2011. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.


    Original     		PDF wound0407 NRS5040T NRH3010 NRS8040 NRS5024 NRS6028 NRH2412 NRS4018 NRS5024T4R7MMGJ 220MMGK NRS2012

    kxj series 450

    Abstract: KXG capacitor ekxg401e220mk20s 400V KXG 82 CAPACITOR 105 100uF 400V Electrolytic Capacitor 105
    Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS 160 to 450Vdc long life, 105℃ KXJ ●For electronic ballast circuits and other long life applications ●Endurance with ripple current : 8,000 to 10,000 hours at 105℃ ●Non solvent resistant type ● RoHS Compliant


    Original     		PDF 450Vdc 400Vdc) 450Vdc) 450Vdc 120Hz) E1001L kxj series 450 KXG capacitor ekxg401e220mk20s 400V KXG 82 CAPACITOR 105 100uF 400V Electrolytic Capacitor 105

    ISL9G1260EG3

    Abstract: ISL9G1260EP3 ISL9G1260ES3 ISL9G1260ES3T
    Text: ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3 Data Sheet January 2002 600V, SMPS II LGC Series N-Channel IGBT Features The ISL9G1260EG3, ISL9G1260EP3 and ISL9G1260ES3 are Low Gate Charge LGC SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs with lower gate


    Original     		PDF ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3 ISL9G1260EP3 100kHz ISL9G1260EG3 ISL9G1260ES3 ISL9G1260ES3T

    EKLJ401E390MM20S

    Abstract: EKLJ401E330ML20S
    Text: 小型铝电解电容器 小型化 系列 引线型・对应异常电压（105℃） RoHS指令 适应品 ＫＬＪ ● 加载过电压时防止引起火花。 ● 保证 105℃ 2,000 小时。 纹波叠加 ESR 值。 ● 请注意不属于基板清洗类型。


    Original     		PDF C1001K 01E390MJ25S EKLJ201E560MK20S EKLJ201E820MK25S EKLJ201E101ML20S EKLJ201E121ML25S EKLJ201E151MM20S EKLJ201E181MLN3S EKLJ201E181MM25S EKLJ201E221MLP1S EKLJ401E390MM20S EKLJ401E330ML20S

    ESMQ500E100ME11D

    Abstract: ESMQ630E332MN40S ESMQ630E101MHB5D eSmq6r3e222mj16s ESMQ250E471MJC5S ESMQ401E3R3MHB5D ESMQ160E222MJ20S esmq250e331mhb5d
    Text: 小型铝电解电容器 RoHS指令 适应品 小型化 系列 引线型・小型化品（85℃） ＳＭＱ SMG 系列小型化品。 85℃ 2,000 小时。 ● 请注意不属于基板清洗类型。 ● 小型化 ● 保证 ＳＭＧ ◆规格表 项 目


    Original     		PDF ESMQ401E3R3MHB5D ESMQ401E4R7MJC5S ESMQ401E100MJ16S ESMQ401E220MK25S ESMQ401E330ML25S ESMQ401E470ML25S ESMQ401E680MLN3S ESMQ401E101MMP1S ESMQ451E2R2MHB5D ESMQ451E3R3MJC5S ESMQ500E100ME11D ESMQ630E332MN40S ESMQ630E101MHB5D eSmq6r3e222mj16s ESMQ250E471MJC5S ESMQ401E3R3MHB5D ESMQ160E222MJ20S esmq250e331mhb5d

    ESMG500E101MHB5D

    Abstract: 1001N ESMG500E102MK25S ESMG500 ESMG500E ESMG250E472MLN3S
    Text: リード形・小形化標準品（85℃） 標準品 ● ● 耐洗浄 RoHS指令 適合品 SMQ ~ 250V 85℃ 2,000 時間保証。 315 ∼ 450Vdc は基板洗浄タイプではありませんのでご注意下さい。 dc 小形化 SMG ◆規格表 項 目


    Original     		PDF 450Vdc 3400Vdc-2585 3450Vdc 3100Vdc 03CV4A 120Hz 160450Vdc 1CV40 03CV15 ESMG500E101MHB5D 1001N ESMG500E102MK25S ESMG500 ESMG500E ESMG250E472MLN3S

    2n6325

    Abstract: 2N6323 on 5297 transistor 2N6322 2N6324 NS2N
    Text: TYPES 2N6322 THRU 2N6325 N-P-N SILICON POWER TRANSISTORS TYPES 2N6322 THRU 2N6325 BULLETIN NO. DL-S 7211589, JANUARY HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M ILIT A R Y APPLICATIONS • 100-mJ Reverse-Energy Rating • 30-A Rated Continuous Collector Current


    OCR Scan     		PDF 2N6322 2N6325 100-mJ 2N6323, 2N6325) 2N6322. 2N6323 2N6324, 2N6323 on 5297 transistor 2N6324 NS2N

    Untitled

    Abstract: No abstract text available
    Text: TPIC6E175 POWER LOGIC EEPROM-PROGRAMMABLE QUAD D-TYPE LATCH SLIS052 - NO VEM BER 1995 NE PACKAGE TOP VIEW Programmable-PWM Current Threshold Programmable-PWM Frequency Controlled by Internal or External Oscillator O S C /V E R [ 1 DRAIN1 [ 2 Integrated Output Recirculation Clamp


    OCR Scan     		PDF TPIC6E175 SLIS052 nbl724