2n6259
Abstract: No abstract text available
Text: <$£ ni-Conduetor ZPwauoti, Una. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 378-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HIGH POWER NPN SILICON TRANSISTORS NPN 2N6259 The 2N6259 is power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching
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2N6259
2N6259
100mAJB
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3701A
Abstract: 2SC4632
Text: Ordering num ber: EN 3701A 2SC4632 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications F e a tu r e s • High breakdown voltage V qeo min = 1200V . • Sm all Cob (typical Cob = 1.6pF). •Full-isolation package.
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2SC4632
3701A
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48X24
Abstract: 3-mm LED LNP193023 192X96
Text: /•\°qU U T-V 7 z f U - f ZL PANEL DISPLAY UNITS . 192X96mm 0 3 mm 48X24 Dots ■H53tfS:fc5É Í8- is i t¡ H fS * A b so lute M axim um Ratings T a = 2 5 °C ^ Sym bol L E a LNP193023 m S upply V o ltag e fo r Logic V cc S upply V o ltag e for LED V led
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192X96mm
48X24
LNP193023
100mAJÂ
bT328SE
3-mm LED
LNP193023
192X96
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AKD n
Abstract: No abstract text available
Text: OPTEK Product Bulletin OP293 April 1993 GaAIAs Plastic Infrared Emitting Diodes Types OP293 and OP298 Series 225 5.72 . .03 (0.76) .215 (5 .46)H (NOTE 13) -*iF-+ :§(ü!SONOM AN ODE 1 .10012.54) fT \ NOM moDE CATHODE “ T u MEASUREM ENT S U R F A C E (NOTES 8 & 10}
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OP293
OP298
OP593
OP598
AKD n
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MIC29302
Abstract: MIC29502 MIC29303
Text: Low-Dropout Voltage Regulator Selector Guide v D e v ic e Accu OUT ra c y 3.0 3.3 4.85 5.0 M IC5200 • • • • M IC5202 • • • • 12 15 Adjust. 1.0% 1.0% ^OUT D ro p o u t F e a tu re s Package mA Voltage @ I *LIM Therm Error Logic Reverse (Max. @ 25 C)
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100mA
IC5200
IC5202
LP2950
LP2951
MIC2950
MIC2951
MIC5201
IC2954
MIC29302
MIC29502
MIC29303
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR IS E D I CORP 7 cn 7 0 ? b OODSISI 2SD1656 NPN Triple Diffused Planar Silicon Transistor 2039 Color TV Horizontal Deflection Output Applications 17548 Applications . High-voltage, power switching Features . Fast speed tfinax=0.4us .
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2SD1656
IS-313
IS-313A
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC U S A H E Rectifier Diodes for Power Supply • V rsm D | ?^D741 □□001E1 3 | :1 0 0 ~ 8 0 0 V H l o : 0 . 7 5 ~ 6 . 0 A MI/RBV Absolute Maximum Ratings Rating/ Characteristics V rsm lo If s m V (A ) (A) RBV-402L RBV-406M RBV-601 RBV-602
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001E1
RBV-402L
RBV-406M
RBV-601
RBV-602
RBV-604
RBV-606
RBV-608
MI-101
MI-101R
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SAI SOT23
Abstract: T-589 5C500
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE3 - OCTOBER 1995 FMMT489 G It FEATURES * V ery lo w e q u iv a le n t on -re sista rice ; RCE 5at 175m£). CO M PLEM ENTARY TYPE - F M M T589 PARTM ARKING DETAIL - 489 a t 1A PARAMETER SYMBOL VALUE UNIT
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FMMT489
100mAJ
200mA*
100mA*
100MHz
FMMT449
SAI SOT23
T-589
5C500
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