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    100N10NS Search Results

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    100N10NS Price and Stock

    Infineon Technologies AG BSC100N10NSFGATMA1

    MOSFET N-CH 100V 11.4/90A 8TDSON
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    DigiKey BSC100N10NSFGATMA1 Digi-Reel 10,675 1
    • 1 $2.83
    • 10 $1.834
    • 100 $2.83
    • 1000 $0.94425
    • 10000 $0.8825
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    BSC100N10NSFGATMA1 Cut Tape 10,675 1
    • 1 $2.83
    • 10 $1.834
    • 100 $2.83
    • 1000 $0.94425
    • 10000 $0.8825
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    BSC100N10NSFGATMA1 Reel 10,000 5,000
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    Newark BSC100N10NSFGATMA1 Cut Tape 3,769 1
    • 1 $2.94
    • 10 $1.9
    • 100 $1.32
    • 1000 $0.982
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    Rochester Electronics BSC100N10NSFGATMA1 1
    • 1 $0.8489
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    • 100 $0.798
    • 1000 $0.7216
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    Chip One Stop BSC100N10NSFGATMA1 Cut Tape 9,980
    • 1 $1.21
    • 10 $1.02
    • 100 $0.886
    • 1000 $0.883
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    EBV Elektronik BSC100N10NSFGATMA1 17 Weeks 5,000
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    Infineon Technologies AG BSC100N10NSFGXT

    Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON - Tape and Reel (Alt: BSC100N10NSFGATMA1)
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    Avnet Americas BSC100N10NSFGXT Reel 16 Weeks 5,000
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    • 10000 $0.71184
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    Infineon Technologies AG BSC100N10NSF G

    MOSFETs N-Ch 100V 90A TDSON-8 OptiMOS 2
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    Mouser Electronics BSC100N10NSF G 13,754
    • 1 $1.96
    • 10 $1.46
    • 100 $1.11
    • 1000 $0.883
    • 10000 $0.882
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    100N10NS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    100N10NS

    Abstract: BSC100N10NSF IEC61249-2-21 JESD22
    Text: 100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • Very low gate charge for high frequency applications R DS on ,max 10 mΩ • Optimized for dc-dc conversion ID 90 A • N-channel, normal level PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSC100N10NSF IEC61249-2-21 100N10NS 100N10NS IEC61249-2-21 JESD22 PDF

    JESD22

    Abstract: DD-50 BSC100N10NSF GS8030
    Text: 100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 10 mΩ ID 90 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSC100N10NSF 100N10NS JESD22 DD-50 GS8030 PDF

    100N10NS

    Abstract: No abstract text available
    Text: 100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 10 mΩ ID 90 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSC100N10NSF 100N10NS 100N10NS PDF