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    100N60 Search Results

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    100N60 Price and Stock

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    Vishay Siliconix SIHP100N60E-GE3

    MOSFET N-CH 600V 30A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP100N60E-GE3 Tube 3,990 1
    • 1 $5.66
    • 10 $5.66
    • 100 $2.7949
    • 1000 $2.24
    • 10000 $2.24
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    Vishay Siliconix SIHB100N60E-GE3

    MOSFET N-CH 600V 30A D2PAK
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    DigiKey SIHB100N60E-GE3 Tube 994 1
    • 1 $5.11
    • 10 $5.11
    • 100 $2.842
    • 1000 $2.27799
    • 10000 $2.27799
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    Vishay Siliconix SIHA100N60E-GE3

    MOSFET N-CH 600V 30A TO220
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    DigiKey SIHA100N60E-GE3 Tube 905 1
    • 1 $5.45
    • 10 $5.45
    • 100 $2.8169
    • 1000 $2.26125
    • 10000 $2.26125
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    Bristol Electronics SIHA100N60E-GE3 400
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    IXYS Corporation IXXK100N60B3H1

    IGBT PT 600V 200A TO-264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXXK100N60B3H1 Tube 388 1
    • 1 $23.66
    • 10 $23.66
    • 100 $13.9956
    • 1000 $13.9956
    • 10000 $13.9956
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    TTI IXXK100N60B3H1 Tube 300
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    • 1000 $17.92
    • 10000 $17.92
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    TME IXXK100N60B3H1 1
    • 1 $27.29
    • 10 $21.85
    • 100 $19.49
    • 1000 $19.49
    • 10000 $19.49
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    Vishay Siliconix SIHG100N60E-GE3

    MOSFET N-CH 600V 30A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHG100N60E-GE3 Tube 359 1
    • 1 $6.56
    • 10 $4.89
    • 100 $3.7534
    • 1000 $2.94712
    • 10000 $2.94712
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    100N60 Datasheets Context Search

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    IXGQ100N60PBD

    Abstract: IXGQ100N60PBD1 IXGQ100N60PB
    Text: Advance Technical Information PolarTM IGBT IXGQ 100N60PBD1 VCES IC25 = = 600 V 100 A With Anti-Parallel Diode For PDP Applications Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VGES Continuous ±20 V VGEM Transient ±30 V 100 A 75


    Original     		100N60PBD1 IXGQ100N60PBD IXGQ100N60PBD1 IXGQ100N60PB PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM IGBT IXGQ 100N60PCD1 VCES IC25 With Anti-Parallel Diode For PDP Applications Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VGES Continuous ±20 V VGEM Transient ±30 V 100 A 75 A 188 A 75 A ICM = 100 A = = Maximum Ratings


    Original     		100N60PCD1 PDF