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    mxic

    Abstract: PM-0254
    Text: IUDCIC MX28F41QO 4M -BIT [51S K X 8 CMOS FLASH MEMORY FEATURES • 524,288x8/262,144x16 switchable • Fast access lime: 120/150/200ns • Low power consumption - 50mA maximum active current - 100nAmaximum standby current • Programming and erasing voltage 12V ± 5%


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    288x8/262 144x16 120/150/200ns 100nAmaximum MX28F41QO 100mA 44-pin 48-pin X28F4100 -1-A17 mxic PM-0254 PDF

    Untitled

    Abstract: No abstract text available
    Text: MXIC ip ^ iy Ë a iM Â i^ Y M X 2 8 F2 1 OOT 2 M - B I T 2 5 6 K x 8 / 1 2 8 K x 1 6 C M O S FLASH M E M O R Y FEA TU RES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100nAmaximum standby current


    OCR Scan
    MX28F21 144x8/131 072x16 70/90/120ns 100nAmaximum 16K-Byte 96K-Byte 128K-Byte MX28FS100T MX28F21OOT PDF

    h5ra

    Abstract: NTE 5432
    Text: IV IX 2 S F 2 1 O O B 2M BIT[256K x 8 / 1 28K x 1 6} CMOS FLASH MEMORY FEA TU RES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100nAmaximum standby current Programming and erasing voltage 12V ± 7%


    OCR Scan
    144x8/131 072x16 70/90/120ns 100nAmaximum 16K-Byte 96K-Byte 128K-Byte 100mA Q0-Q15 XX90H h5ra NTE 5432 PDF

    PM-0254

    Abstract: MXIc MX28F4100 Q0-Q15
    Text: JFL 1MACRONIX. V I OO 4M-BIT 51 2K x 8} CMOS FLASH MEMORY FEATURES • 524,288x8/262,144x16 switchable • Fast access time: 120/150/200ns


    OCR Scan
    MX28F41OO 288x8/262 144x16 120/150/200ns 50fis 100mA techno94 Q15/A-1 Q13ZZ MX28F4100 PM-0254 MXIc Q0-Q15 PDF