MPSW13
Abstract: MPSW14 MPSW63 MPSW64
Text: ——— MPSW63 MPSW64 — ONE WATT PNP SILICON DARLINGTON AMPLIFIER TRANSISTORS @ High DC Current hFE = Gain @ Ic = 10 mAdc 5,000 Min MPSW63 10,000 (Min) MPSW64 @ Co[lector-Emitter 30 Vdc(Min)@ V(BR)CES= @ Monolithic Breakdown Voltage — — Ic= 100pAdc
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MPSW63
MPSW64
100pAdc
MPSW63,
MPSW13,
MPSW14
E5830
MPSW13
MPSW14
MPSW63
MPSW64
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT3904T Features • • x • • • • 150mW NPN General Purpose Amplifier Halogen free available upon request by adding suffix "-HF"
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MMBT3904T
150mW
OT-523
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT3906T Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information
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MMBT3906T
OT-523
OT-523
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MMBT3904T
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT3904T Features • x • • • • 150mW NPN General Purpose Amplifier Lead Free Finish/RoHS Compliant "P" Suffix designates
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MMBT3904T
150mW
OT-523
MMBT3904T
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT3904T Features • • x • • • • 150mW NPN General Purpose Amplifier Halogen free available upon request by adding suffix "-HF"
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MMBT3904T
150mW
OT-523
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT3904T Features • x x x 150mW Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1
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MMBT3904T
150mW
30Vdc,
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT3906T Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information
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MMBT3906T
OT-523
OT-523
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MMBT3906T
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT3906T Features x x Surface Mount SOT-523 Package Epitaxial Planar Die Construction x Case Material: Molded Plastic. UL Flammability
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MMBT3906T
OT-523
MMBT3906T
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2N2920
Abstract: 2n2917 2n2915 2N297 2N2919 2N2913 2n2914 2N2920 applications 2N2972 MOTOROLA 2n2920
Text: DUAL NPN SILICON @ e e e e e e ANNULAR*TRANSISTORS . . . especially designed for low-level, differential amplifier applications. @ low-noise e s High Breakdown Voltage BVCEO= 70 Vdc typical o Very High Beta Guaranteed ,.$:>. ,.,p~ .*. s Beta Match as tight as 0.9 to 1
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2N2979
2N2920
2N2919-20
2N2978-79
2N2972-77
45BVEBO
2N2913
2N2972
2N2919,
2N2920,
2N2920
2n2917
2n2915
2N297
2N2919
2n2914
2N2920 applications
MOTOROLA 2n2920
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT3906T Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information
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MMBT3906T
OT-523
OT-523
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT3904T Features 150mW x Case Material: Molded Plastic. Classification Rating 94V-0 x x Collector Current: 0.2A
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MMBT3904T
150mW
OT-523
10PAdc,
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Voltage Transistor NPN Silicon COLLECTOR 3 1 EMITTER CASE 29-05, STYLE 1 TO-92 TO-226AE MAXIM UM RATINGS Rating Symbol Value Collector-Emltter Voltage v CEO 300 Vdc Collector-Base Voltage VCBO 300 Vdc Emitter-Base Voltage
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O-226AE)
MPSW10
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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BAV99W A7
Abstract: BAV99VV BAS16VV BAS16W BAV70W BAV99W BAW56W BAV99W peak temperature
Text: BAS16W / BAV70W BA W 56W / BAV99W Surface M o u n t Sw itchin g Diode SW ITCHING DIODE 200-215m AMPF.RRES 70-75 VOLTS Featui-es: T o w Current Leakage *Low Forward Voltage “ Reverse Recover Time T rr*6 n s *Sm all Outline Surface Mount SOT-323 Package •
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BAS16W
BAV70W
BAW56W
BAV99W
200-215m
OT-323
T-323
SC-70)
OT-323
BAV99W A7
BAV99VV
BAS16VV
BAV99W
BAV99W peak temperature
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Untitled
Abstract: No abstract text available
Text: SOLID STATE DEVICES INC Preliminary Data Sheet 15E D §fl3bbDll 00020b! 5 | SFT3507 o ULTRA 3 AMP 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 _ TW X 910-583-4807 I ' 5 J FAX 213-921-2396 F A S T NPN T R A N S I S T O R 150 V O L T S
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00020b!
SFT3507
60MHz
100KHz)
30Vdc,
150mAdc)
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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wiring diagram audio amplifier ic 6283
Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
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4L3052
4L3056
wiring diagram audio amplifier ic 6283
germanium
Transistor Shortform Datasheet & Cross References
halbleiter index transistor
2N5160 MOTOROLA
transistor ITT 2907
1N5159
2N 5574
inverter welder 4 schematic
diagrams de ic lg 8838
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BAS16H
Abstract: A6 BAS16H
Text: 1 BAS16H Surface M ount Switching Diode S W IT C H IN G D IO D E 200m AM PERS 10OVOLTS Features: 'H igh Speed < 6 n s ’Low Rever Leakage Current 'Sm a ll Outline Surface Mount S O D -3 2 3 Package SOD -323 O utline Dimensions A 1 Unit:mm K p— M ILLM ETER S
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BAS16H
OD-323
200mAMPERS
10OVOLTS
OD-323
15REF
BAS16H
10-H-02
Ip-lR-10mA.
A6 BAS16H
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BAY99
Abstract: BAW56 Diode BAV99 SOT23 BAV70 BAY70 3PIR BAS16 BAV99 MJ marking sot23 LFL 2.25
Text: Surface M o u n t S w itching Diode SW ITCH IN G DIODE 200-215m AM PERRES 70-75 VOLTS F eatu res: *Low C urrent Leakage *Low Forward Voltage "Reverse Recover Tim e T r r* 6 n s *S m all O utline Surface M ount SOT-23 Package SOT-23 O u tlin e Dimensions unit:mm
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OT-23
BAV70
BAW56
200-215m
OT-23
B\W54>
BAY99
Diode BAV99 SOT23
BAY70
3PIR
BAS16
BAV99
MJ marking sot23
LFL 2.25
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