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    MPSW13

    Abstract: MPSW14 MPSW63 MPSW64
    Text: ——— MPSW63 MPSW64 — ONE WATT PNP SILICON DARLINGTON AMPLIFIER TRANSISTORS @ High DC Current hFE = Gain @ Ic = 10 mAdc 5,000 Min MPSW63 10,000 (Min) MPSW64 @ Co[lector-Emitter 30 Vdc(Min)@ V(BR)CES= @ Monolithic Breakdown Voltage — — Ic= 100pAdc


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    MPSW63 MPSW64 100pAdc MPSW63, MPSW13, MPSW14 E5830 MPSW13 MPSW14 MPSW63 MPSW64 PDF

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    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904T Features • • x • • • • 150mW NPN General Purpose Amplifier Halogen free available upon request by adding suffix "-HF"


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    MMBT3904T 150mW OT-523 PDF

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    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3906T Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information


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    MMBT3906T OT-523 OT-523 PDF

    MMBT3904T

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904T Features • x • • • • 150mW NPN General Purpose Amplifier Lead Free Finish/RoHS Compliant "P" Suffix designates


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    MMBT3904T 150mW OT-523 MMBT3904T PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904T Features • • x • • • • 150mW NPN General Purpose Amplifier Halogen free available upon request by adding suffix "-HF"


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    MMBT3904T 150mW OT-523 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904T Features • x x x 150mW Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1


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    MMBT3904T 150mW 30Vdc, PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3906T Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information


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    MMBT3906T OT-523 OT-523 PDF

    MMBT3906T

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3906T Features x x Surface Mount SOT-523 Package Epitaxial Planar Die Construction x Case Material: Molded Plastic. UL Flammability


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    MMBT3906T OT-523 MMBT3906T PDF

    2N2920

    Abstract: 2n2917 2n2915 2N297 2N2919 2N2913 2n2914 2N2920 applications 2N2972 MOTOROLA 2n2920
    Text: DUAL NPN SILICON @ e e e e e e ANNULAR*TRANSISTORS . . . especially designed for low-level, differential amplifier applications. @ low-noise e s High Breakdown Voltage BVCEO= 70 Vdc typical o Very High Beta Guaranteed ,.$:>. ,.,p~ .*. s Beta Match as tight as 0.9 to 1


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    2N2979 2N2920 2N2919-20 2N2978-79 2N2972-77 45BVEBO 2N2913 2N2972 2N2919, 2N2920, 2N2920 2n2917 2n2915 2N297 2N2919 2n2914 2N2920 applications MOTOROLA 2n2920 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3906T Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information


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    MMBT3906T OT-523 OT-523 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904T Features 150mW x Case Material: Molded Plastic. Classification Rating 94V-0 x x Collector Current: 0.2A


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    MMBT3904T 150mW OT-523 10PAdc, PDF

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    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Voltage Transistor NPN Silicon COLLECTOR 3 1 EMITTER CASE 29-05, STYLE 1 TO-92 TO-226AE MAXIM UM RATINGS Rating Symbol Value Collector-Emltter Voltage v CEO 300 Vdc Collector-Base Voltage VCBO 300 Vdc Emitter-Base Voltage


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    O-226AE) MPSW10 PDF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor PDF

    BAV99W A7

    Abstract: BAV99VV BAS16VV BAS16W BAV70W BAV99W BAW56W BAV99W peak temperature
    Text: BAS16W / BAV70W BA W 56W / BAV99W Surface M o u n t Sw itchin g Diode SW ITCHING DIODE 200-215m AMPF.RRES 70-75 VOLTS Featui-es: T o w Current Leakage *Low Forward Voltage “ Reverse Recover Time T rr*6 n s *Sm all Outline Surface Mount SOT-323 Package •


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    BAS16W BAV70W BAW56W BAV99W 200-215m OT-323 T-323 SC-70) OT-323 BAV99W A7 BAV99VV BAS16VV BAV99W BAV99W peak temperature PDF

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE DEVICES INC Preliminary Data Sheet 15E D §fl3bbDll 00020b! 5 | SFT3507 o ULTRA 3 AMP 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 _ TW X 910-583-4807 I ' 5 J FAX 213-921-2396 F A S T NPN T R A N S I S T O R 150 V O L T S


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    00020b! SFT3507 60MHz 100KHz) 30Vdc, 150mAdc) PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


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    4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838 PDF

    BAS16H

    Abstract: A6 BAS16H
    Text: 1 BAS16H Surface M ount Switching Diode S W IT C H IN G D IO D E 200m AM PERS 10OVOLTS Features: 'H igh Speed < 6 n s ’Low Rever Leakage Current 'Sm a ll Outline Surface Mount S O D -3 2 3 Package SOD -323 O utline Dimensions A 1 Unit:mm K p— M ILLM ETER S


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    BAS16H OD-323 200mAMPERS 10OVOLTS OD-323 15REF BAS16H 10-H-02 Ip-lR-10mA. A6 BAS16H PDF

    BAY99

    Abstract: BAW56 Diode BAV99 SOT23 BAV70 BAY70 3PIR BAS16 BAV99 MJ marking sot23 LFL 2.25
    Text: Surface M o u n t S w itching Diode SW ITCH IN G DIODE 200-215m AM PERRES 70-75 VOLTS F eatu res: *Low C urrent Leakage *Low Forward Voltage "Reverse Recover Tim e T r r* 6 n s *S m all O utline Surface M ount SOT-23 Package SOT-23 O u tlin e Dimensions unit:mm


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    OT-23 BAV70 BAW56 200-215m OT-23 B\W54> BAY99 Diode BAV99 SOT23 BAY70 3PIR BAS16 BAV99 MJ marking sot23 LFL 2.25 PDF