irf530
Abstract: 929E-10 IRF530 fairchild
Text: IRF530 Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET [ /Title IRF53 0 /Subject (22A, 100V, 0.064 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 22A, 100V, 0.064 Ohm, NChannel Power
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IRF530
IRF53
O220AB
O-220AB
O-220AB
IRF530
929E-10
IRF530 fairchild
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MOSFET MARK H1
Abstract: 2E12 FSS130R4 JANSR2N7399 T0-257AA Rad Hard in Fairchild for MOSFET
Text: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 99 /Subject (11A, 100V, 0.210 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines
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JANSR2N7399
FSS130R4
R2N73
MOSFET MARK H1
2E12
FSS130R4
JANSR2N7399
T0-257AA
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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JANSR2N7399
FSS130R4
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2E12
Abstract: FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3
Text: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically
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FSS130D,
FSS130R
2E12
FSS130D
FSS130D1
FSS130D3
FSS130R
FSS130R1
FSS130R3
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2E12
Abstract: FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 Rad Hard in Fairchild for MOSFET
Text: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically
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FSS130D,
FSS130R
2E12
FSS130D
FSS130D1
FSS130D3
FSS130R
FSS130R1
FSS130R3
Rad Hard in Fairchild for MOSFET
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Rad Hard in Fairchild for MOSFET
Abstract: No abstract text available
Text: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically
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FSS130D,
FSS130R
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: FRS9140D, FRS9140R, FRS9140H 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 11A, -100V, RDS on = 0.315Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot
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FRS9140D,
FRS9140R,
FRS9140H
-100V,
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
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2E12
Abstract: FRM9140D FRM9140H FRM9140R HI 17741 ua 17741
Text: FRM9140D, FRM9140R, FRM9140H 11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11A, -100V, RDS on = 0.300Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRM9140D,
FRM9140R,
FRM9140H
-100V,
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
FRM9140D
FRM9140H
FRM9140R
HI 17741
ua 17741
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ta17741
Abstract: 2E12 FRS9140D FRS9140H FRS9140R
Text: FRS9140D, FRS9140R, FRS9140H 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11A, -100V, RDS on = 0.315Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRS9140D,
FRS9140R,
FRS9140H
-100V,
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
ta17741
2E12
FRS9140D
FRS9140H
FRS9140R
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2E12
Abstract: FRM9140D FRM9140H FRM9140R Rad Hard in Fairchild for MOSFET
Text: FRM9140D, FRM9140R, FRM9140H 11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11A, -100V, RDS on = 0.300Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRM9140D,
FRM9140R,
FRM9140H
-100V,
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
FRM9140D
FRM9140H
FRM9140R
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: FRS9140D FRS9140H FRS9140R Rad Hard in Fairchild for MOSFET
Text: FRS9140D, FRS9140R, FRS9140H 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11A, -100V, RDS on = 0.315Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRS9140D,
FRS9140R,
FRS9140H
-100V,
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
FRS9140D
FRS9140H
FRS9140R
Rad Hard in Fairchild for MOSFET
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IRF9130
Abstract: IRF9130 mosfet gate drive for mosfet irf9130 JANTX2N6804 JANTXV2N6804
Text: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804 HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International
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90549C
IRF9130
JANTX2N6804
JANTXV2N6804
O-204AA/AE)
MIL-PRF-19500/562]
-100V
parellelin252-7105
IRF9130
IRF9130 mosfet
gate drive for mosfet irf9130
JANTX2N6804
JANTXV2N6804
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irf9130
Abstract: No abstract text available
Text: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804 HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International
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90549C
IRF9130
JANTX2N6804
JANTXV2N6804
O-204AA/AE)
MIL-PRF-19500/562]
-100V
irf9130
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N170SK
Abstract: No abstract text available
Text: DMN10H170SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features V BR DSS RDS(on) max 100V 140mΩ @ VGS = 10V 160mΩ @ VGS = 4.5V • • • • • ID TC = 25°C 12A 11A Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
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DMN10H170SK3
AEC-Q101
DS35734
N170SK
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IRF5Y9540CM
Abstract: 4.5v to 100v input regulator
Text: PD - 94027A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y9540CM 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y9540CM -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4027A
O-257AA)
IRF5Y9540CM
-100V
high-energy52-7105
IRF5Y9540CM
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: PD - 94027A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y9540CM 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y9540CM -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4027A
O-257AA)
IRF5Y9540CM
-100V
high-e252-7105
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Untitled
Abstract: No abstract text available
Text: PD - 94038 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ9540 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ9540 -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRF5NJ9540
-100V
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Untitled
Abstract: No abstract text available
Text: PD - 94038A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ9540 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ9540 -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4038A
IRF5NJ9540
-100V
-100V,
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Untitled
Abstract: No abstract text available
Text: PD - 94027 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y9540CM 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y9540CM -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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O-257AA)
IRF5Y9540CM
-100V
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2E12
Abstract: FSS130R4 JANSR2N7399 T0-257AA
Text: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7399
FSS130R4
2E12
FSS130R4
JANSR2N7399
T0-257AA
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N170SK
Abstract: N170
Text: DMN10H170SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET N EW PRO D UC T Product Summary Features V BR DSS RDS(on) max 100V 140mΩ @ VGS = 10V 160mΩ @ VGS = 4.5V • • • • • ID T C = +25°C 12A 11A Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
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DMN10H170SK3
AEC-Q101
DS35734
N170SK
N170
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4431 mosfet
Abstract: No abstract text available
Text: S JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A,100V,rDS ON = 0.21012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSS130R4
JANSR2N7399
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
4431 mosfet
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Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R FRM9140D, FRM9140R, FRM9140H 11 A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Package Features • 11A.-100V, RDS on = 0.300£J TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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PDF
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FRM9140D,
FRM9140R,
FRM9140H
-100V,
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
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transistors ai 585
Abstract: No abstract text available
Text: FSS130D, FSS130R S em iconductor 11 A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description . 11 A, 100V, rDS 0 N = 0.210£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSS130D,
FSS130R
O-257AA
MIL-S-19500
transistors ai 585
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