100V 1A DARLINGTON TRANSISTOR Search Results

100V 1A DARLINGTON TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

100V 1A DARLINGTON TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor Ic 1A datasheet NPN Abstract: 2SD689 2SB679 transistor Ic 1A datasheet current amplifier note darlington darlington 5v drive IC 1A datasheet NPN Transistor 1A 100V medium power high voltage transistor npn transistor 0.1A 100V Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 1A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1A	Original	2SB679 transistor Ic 1A datasheet NPN 2SD689 2SB679 transistor Ic 1A datasheet current amplifier note darlington darlington 5v drive IC 1A datasheet NPN Transistor 1A 100V medium power high voltage transistor npn transistor 0.1A 100V	PDF
Ic 1A Abstract: 100v 1a darlington transistor 100v 1a transistor 2SB1411 transistor pnp 1a Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 1500(Min)@ (VCE= -3V, IC= -1A) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -1A, IB= -2mA)	Original	-100V -100V; Ic 1A 100v 1a darlington transistor 100v 1a transistor 2SB1411 transistor pnp 1a	PDF
2SB1286 Abstract: 2SD1646 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain:hFE = 1000 Min @ IC= -1A ·Collector-Emitter Breakdown Voltage:V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage	Original	-100V 2SD1646 2SB1286 -100V; 2SB1286 2SD1646	PDF
2SD1765 Abstract: 2SB1287 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain:hFE = 1000 Min @ IC= -1A ·Collector-Emitter Breakdown Voltage:V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage	Original	-100V 2SD1765 2SB1287 -100V; 2SD1765 2SB1287	PDF
2SD2398 Abstract: 2SB1567 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD2398 APPLICATIONS	Original	-100V 2SD2398 Dissipati2SB1567 -100V; 2SD2398 2SB1567	PDF
DARLINGTON 3A 100V npn Abstract: hfe 2500 NTE264 Text: NTE263 NPN & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.	Original	NTE263 NTE264 NTE263) NTE264) DARLINGTON 3A 100V npn hfe 2500 NTE264	PDF
FXT704 Abstract: ZTX704 100v 1a darlington transistor DSA003757 Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT704 ISSUE 1 FEB 94 FEATURES * 100 Volt VCEO * Gain of 3K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 darlington transistors REFER TO ZTX704 FOR GRAPHS	Original	FXT704 ZTX704 -100V, -10mA* -10mA, -100mA, 20MHz FXT704 100v 1a darlington transistor DSA003757	PDF
NTE2341 Abstract: npn darlington TO92 NTE2342 Text: NTE2341 NPN & NTE2342 (PNP) Silicon Complementary Transistors Darlington Driver Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.	Original	NTE2341 NTE2342 NTE2341 500mA, 100MHz npn darlington TO92 NTE2342	PDF
2SB1567 Abstract: No abstract text available Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1567 Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo=-100V(Min) • High DC Current Gain-	Original	2SB1567 -100V 2SD2398 O-220F 2SB1567	PDF
Untitled Abstract: No abstract text available Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP107 █ APPLICATIONS High Voltage switching.Motor driving. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃	Original	HP107 O-220 -100V -30mA, -100V, -80mA	PDF
NPN Transistor 8A Abstract: HP102 npn transistor 100v min npn 100v 1.5a DARLINGTON 3A 100V npn NPN Transistor 1A 100V Text: NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP102 █ APPLICATIONS High Voltage switching.Motor driving. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃	Original	HP102 O-220 NPN Transistor 8A HP102 npn transistor 100v min npn 100v 1.5a DARLINGTON 3A 100V npn NPN Transistor 1A 100V	PDF
BDX67 Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min @ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier	Original	BDX66/A/B/C BDX67 BDX67C BDX67A BDX67B BDX67 npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66	PDF
NTE262 Abstract: NTE261 DARLINGTON 3A 100V npn Text: NTE261 NPN & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.	Original	NTE261 NTE262 100mA NTE262 NTE261 DARLINGTON 3A 100V npn	PDF
CJF6388 Abstract: CJF6668 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6668 TO-220FP Fully Isolated Plastic Package Complementary CJF6388 General Purpose Darlington Amplifier and Switching Applications	Original	CJF6668 O-220FP CJF6388 C-120 CJF6668Rev CJF6388 CJF6668	PDF

CJF6388 Abstract: CJF6668 Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6668 TO-220FP Fully Isolated Plastic Package Complementary CJF6388 General Purpose Darlington Amplifier and Switching Applications	Original	ISO/TS16949 CJF6668 O-220FP CJF6388 C-120 CJF6668Rev CJF6388 CJF6668	PDF
CJF6388 Abstract: CJF6668 Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6388 TO-220FP Fully Isolated Plastic Package Complementary CJF6668 General Purpose Darlington Amplifier and Switching Applications	Original	ISO/TS16949 CJF6388 O-220FP CJF6668 C-120 CJF6388Rev CJF6388 CJF6668	PDF
TIP117 Abstract: TIP116 TIP115 TIP-115 NPN Transistor TO220 VCEO 80V 100V PNP NPN Transistor VCEO 80V 100V Ic 2A tip117 TRANSISTOR equivalent NPN Transistor VCEO 80V 100V DARLINGTON 2A 80v complementary transistor tip115 transistor Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, IC= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Complementary to TIP110/111/112	Original	TIP115/116/117 O-220 TIP110/111/112 TIP116 TIP117 TIP115 -100V, TIP117 TIP116 TIP115 TIP-115 NPN Transistor TO220 VCEO 80V 100V PNP NPN Transistor VCEO 80V 100V Ic 2A tip117 TRANSISTOR equivalent NPN Transistor VCEO 80V 100V DARLINGTON 2A 80v complementary transistor tip115 transistor	PDF
NPN Transistor VCEO 80V 100V Abstract: darlington power pack NPN Transistor VCEO 80V 100V DARLINGTON CJF6388 CJF6668 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6388 TO-220FP Fully Isolated Plastic Package Complementary CJF6668 General Purpose Darlington Amplifier and Switching Applications	Original	CJF6388 O-220FP CJF6668 C-120 CJF6388Rev NPN Transistor VCEO 80V 100V darlington power pack NPN Transistor VCEO 80V 100V DARLINGTON CJF6388 CJF6668	PDF
nte2544 Abstract: No abstract text available Text: NTE2544 Silicon NPN Transistor Darlington Driver Features: D Darlington Conncetion D High DC Current Gain D Low Dependence of DC Current Gain on Temperature Applications: D Motor Driver D Printer Hammer Driver D Relay Driver Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	NTE2544 nte2544	PDF
ULN2003NA Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series \|T r a n s i s t o r \| [ A r r a y ] \|DM O S\| T r a n s i s t o r \|A r r a y \| — Multi-Chip — Module	OCR Scan	TD62M TD62C TD/TB62 N29B3a 54S63PA 54597p 54598PÜ 2786A UDN2580a ULN2003NA transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P	PDF
IRF9210 Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF	OCR Scan	2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1	PDF
FXT704 Abstract: No abstract text available Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT704 ISSUE 1 - FEB 94_ FEATURES * 100 V o lt VCE0 * Gain o f 3 K a t lc=1 A m p * P,0,= 1 W a tt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of T 0 1 2 6 and T 0 2 2 0 darlington transistors	OCR Scan	TX704 FXT704 -100hA -100V, 100-C -10mA* -10mA, -100mA, 20MHz FXT704	PDF
SQD65BB75 Abstract: sqd65B Text: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.	OCR Scan	SQP65BB75 SQD65BB75 00DEE22 SQD65BB75 sqd65B	PDF
VQC10 Abstract: No abstract text available Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 IS SU E 2 - SEPTEM BER 1995 FEA TU RES * 2A CONTINUOUS CURRENT * FA ST SW ITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COM PLEM ENTARY TYPE - FZT604 PART MARKING D ETAIL FZT704 •= ABSOLUTE MAXIMUM RATINGS.	OCR Scan	OT223 FZT704 FZT604 FZT705 Tamb-25 VQC10	PDF

100V 1A DARLINGTON TRANSISTOR Search Results

100V 1A DARLINGTON TRANSISTOR Result Highlights (5)

100V 1A DARLINGTON TRANSISTOR Datasheets Context Search

transistor Ic 1A datasheet NPN

Ic 1A

2SB1286

2SD1765

2SD2398

DARLINGTON 3A 100V npn

FXT704

NTE2341

2SB1567

Untitled

NPN Transistor 8A

BDX67

NTE262

CJF6388

CJF6388

CJF6388

TIP117

NPN Transistor VCEO 80V 100V

nte2544

ULN2003NA

IRF9210

FXT704

SQD65BB75

VQC10