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    100V 23A P-CHANNEL MOSFET Search Results

    100V 23A P-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    100V 23A P-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100v 23A P-Channel MOSFET

    Abstract: No abstract text available
    Text: Semiconductor FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot


    Original     		PDF FRF9150D, FRF9150R, FRF9150H -100V, O-254AA 1000K 3000K O-254AA MIL-S-19500 100v 23A P-Channel MOSFET

    Rad Hard in Fairchild for MOSFET

    Abstract: No abstract text available
    Text: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot


    Original     		PDF FRF9150D, FRF9150R, FRF9150H -100V, O-254AA 1000K 3000K Rad Hard in Fairchild for MOSFET

    100v 23A P-Channel MOSFET

    Abstract: Rad Hard in Fairchild for MOSFET FRF9150R 17 17751 21 2E12 FRF9150D FRF9150H FRF9150
    Text: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRF9150D, FRF9150R, FRF9150H -100V, O-254AA 1000K 3000K 100v 23A P-Channel MOSFET Rad Hard in Fairchild for MOSFET FRF9150R 17 17751 21 2E12 FRF9150D FRF9150H FRF9150

    100v 23A P-Channel MOSFET

    Abstract: 2E12 FRF9150D FRF9150H FRF9150R
    Text: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRF9150D, FRF9150R, FRF9150H -100V, O-254AA 1000K 3000K 100v 23A P-Channel MOSFET 2E12 FRF9150D FRF9150H FRF9150R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


    Original     		PDF UT23P09 -100V UT23P09 UT23P09L-TA3-T UT23P09G-TA3-T O-220 QW-R502-844

    Untitled

    Abstract: No abstract text available
    Text: AP25N10GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D 100V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 80m 23A S Description


    Original     		PDF AP25N10GS/P-HF O-220 O-263 AP25N10GP) 100ms

    100v 23A P-Channel MOSFET

    Abstract: IRFI5210 IRF5210 of what package type b 1370
    Text: PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -23A


    Original     		PDF IRFI5210 -100V O-220 100v 23A P-Channel MOSFET IRFI5210 IRF5210 of what package type b 1370

    IRFI5210

    Abstract: IRF5210
    Text: PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -23A


    Original     		PDF IRFI5210 -100V O-220 IRFI5210 IRF5210

    b 1370

    Abstract: IRFI5210
    Text: PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -23A


    Original     		PDF IRFI5210 -100V O-220 b 1370 IRFI5210

    IRF9540N

    Abstract: datasheet of irf9540n IRF9540n datasheet 7A, 100v fast recovery diode irf9540n to220ab ir D 92 M - 02 DIODE
    Text: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91437B IRF9540N -100V O-220 IRF9540N datasheet of irf9540n IRF9540n datasheet 7A, 100v fast recovery diode irf9540n to220ab ir D 92 M - 02 DIODE

    Untitled

    Abstract: No abstract text available
    Text: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91437B IRF9540N -100V O-220 commercial-industria245,

    IRFP9140N

    Abstract: 100v 23A P-Channel MOSFET
    Text: PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFP9140N -100V O-247 IRFP9140N 100v 23A P-Channel MOSFET

    IRFP9140N

    Abstract: SEC IRF9540N
    Text: PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFP9140N -100V O-247 IRFP9140N SEC IRF9540N

    IRF9540N

    Abstract: 100v 23A P-Channel MOSFET SEC IRF9540N datasheet of irf9540n IRF9540n datasheet irf9540n to220ab ir
    Text: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91437B IRF9540N -100V O-220 IRF9540N 100v 23A P-Channel MOSFET SEC IRF9540N datasheet of irf9540n IRF9540n datasheet irf9540n to220ab ir

    irfp9140npbf

    Abstract: IRF9540N
    Text: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFP9140NPbF -100V O-247 IRF9540N -470A/ O-247AC IRFPE30 irfp9140npbf

    4.5V TO 100V INPUT REGULATOR

    Abstract: No abstract text available
    Text: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFP9140NPbF -100V O-247 O-247AC IRFPE30 4.5V TO 100V INPUT REGULATOR

    irfp9140npbf

    Abstract: 4.5V TO 100V INPUT REGULATOR
    Text: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFP9140NPbF -100V O-247 O-247AC IRFPE30 irfp9140npbf 4.5V TO 100V INPUT REGULATOR

    DIODE 1334 LM

    Abstract: 2N7323R 2E12 2N7323D 2N7323H Rad hard for Harris Rad hard MOSFETS in Harris 2N7323
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H 2N7323D, 2N7323R 2N7323H Radiation Hardened P-Channel Power MOSFETs March 1996 Features Package • 23A, -100V, rDS(ON) = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		PDF FRF9150 2N7323D, 2N7323R 2N7323H -100V, O-254AA 1000K 3000K 3E14ights 1-800-4-HARRIS DIODE 1334 LM 2N7323R 2E12 2N7323D 2N7323H Rad hard for Harris Rad hard MOSFETS in Harris 2N7323

    Untitled

    Abstract: No abstract text available
    Text: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rD S 0 N = 0.140S1 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts G • Gamma • Gamma Dot


    OCR Scan     		PDF FRF9150D, FRF9150R, FRF9150H -100V, O-254AA 140S1 1000K 3000K -254AA

    sm69a

    Abstract: 86 diode Rad hard MOSFETS in Harris S 170 TRANSISTOR
    Text: Semiconductor FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, r D S 0 N = 0.140S2 TO-254AA • Second Generation Rad Hard M OSFET Results From New Design Concepts • G am m a


    OCR Scan     		PDF FRF9150D, FRF9150R, FRF9150H -100V, 1000K 3000K O-254AA MIL-S-19500 sm69a 86 diode Rad hard MOSFETS in Harris S 170 TRANSISTOR

    FRF9150H

    Abstract: power mosfet p channel rad hard rds
    Text: Q3 HARRIS S E M I C O N D U C T O R FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Package Features • 23A, -100V, rp S {O N = 0.140Q TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRF9150D, FRF9150R, FRF9150H -100V, O-254AA 1000K 3000K MIL-S-19500 I775IUIS FRF9150H power mosfet p channel rad hard rds

    Untitled

    Abstract: No abstract text available
    Text: 2N7323D, 2N7323R 2N7323H H a r r is S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H Radiation Hardened P-Channel Power MOSFETs March 1996 Package Features • 23A, -100V, Tos(ON) = 0.140& TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF 2N7323D, 2N7323R 2N7323H FRF9150 -100V, O-254AA 1000K 3000K 1-800-4-HARRIS

    2N7323

    Abstract: No abstract text available
    Text: m l- L A J R F R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H 2N7323D, 2N7323R 2N7323H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 23A, -100V, ROS(on) « 0.140Q TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRF9150 2N7323D, 2N7323R 2N7323H O-254AA -100V, 300KRAD 1000KRAD 3000KRAD 35MeV/mg/cmJandUNCLAMPED 2N7323

    Untitled

    Abstract: No abstract text available
    Text: f f i h a r r is U U S E M I C O N D U C T O R FRF250D, FRF250R, F fí F2S0H 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 200V, RDS on = 0.115£1 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRF250D, FRF250R, O-254AA 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500 FRF250H