scr 8a 200v
Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
Text: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified
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394hex
450sq.
678hex
scr 8a 200v
do213ab
50A 1200V SCR
5A 200V SCR die
SCR 30A 100V
USD635C
1n4436
US60A
eh12a
1N1183
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pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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scr optoisolator
Abstract: NTE3091
Text: NTE3091 Optoisolator SCR Output Description: The NTE3091 is a gallium arsenide, infrared emitting diode coupled with a light activated silicon controlled rectifier in a 6–Lead DIP type ppackage. Absolute Maximum Rating: TA = +25°C unless otherwise specified
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NTE3091
NTE3091
500VDC
scr optoisolator
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scr optoisolator
Abstract: Photo SCR NTE3091 Infrared Emitting Diode SCR TRIGGER PULSE circuit
Text: NTE3091 Optoisolator SCR Output Description: The NTE3091 is a gallium arsenide, infrared emitting diode coupled with a light activated silicon controlled rectifier in a 6−Lead DIP type ppackage. Absolute Maximum Rating: TA = +25°C unless otherwise specified
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NTE3091
NTE3091
500VDC
scr optoisolator
Photo SCR
Infrared Emitting Diode
SCR TRIGGER PULSE circuit
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IRF540N
Abstract: IRFP140N
Text: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier
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91343B
IRFP140N
O-247
IRF540N
IRFP140N
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Untitled
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.3A 2N3756 Silicon Controlled Rectifier RMS On-State Current, I T R M S Peak One Cycle Surge (non-rep) On-State Current, ITSM I2t (for fusing), for time = l.Q milliseconds (See Chart 9) for time - 8.3 milliseconds (See Chart 9)
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2N3756
V4-28
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IRFP150N
Abstract: IRF1310N TO-247AC Package Mosfet IRFP150N 4.5v to 100v input regulator
Text: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier
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91503D
IRFP150N
O-247
O-247AC
IRFP150N
IRF1310N
TO-247AC Package
Mosfet IRFP150N
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier
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91503D
IRFP150N
O-247
O-247AC
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IRFP150N
Abstract: IRFP150N International Rectifier IRF1310N 4.5v to 100v input regulator Mosfet IRFP150N 91503D
Text: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier
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91503D
IRFP150N
O-247
O-247AC
IRFP150N
IRFP150N International Rectifier
IRF1310N
4.5v to 100v input regulator
Mosfet IRFP150N
91503D
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IRFP150N
Abstract: IRFP150N International Rectifier IRF1310N 4.5v to 100v input regulator
Text: PD- 91503C IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier
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91503C
IRFP150N
O-247
IRFP150N
IRFP150N International Rectifier
IRF1310N
4.5v to 100v input regulator
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znr 10k 391
Abstract: TRIAC BCR 1 AM znr 10k BCR 3A 400V triac bcr BS08A znr 10k 112 ZNR 391 dc 220v motor speed control circuit with scr Application silicon bilateral switch light Dimmer
Text: Low Power Applications and Technical Data Book Low Power Triac & SCR Application Tips 11.0 Application Information Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 11.0 Application Information 11.1 Radio Frequency Interference
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6000pF
BCR1AM-12
BS08A
znr 10k 391
TRIAC BCR 1 AM
znr 10k
BCR 3A 400V
triac bcr
BS08A
znr 10k 112
ZNR 391
dc 220v motor speed control circuit with scr
Application silicon bilateral switch light Dimmer
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IRFP3710
Abstract: IRF3710 4.5V TO 100V INPUT REGULATOR
Text: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier
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PD-91490C
IRFP3710
O-247
IRFP3710
IRF3710
4.5V TO 100V INPUT REGULATOR
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ISD 1400 d
Abstract: IRF540N IRFP140N 4.5V TO 100V INPUT REGULATOR
Text: PD - 9.1343A IRFP140N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier
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IRFP140N
O-247
ISD 1400 d
IRF540N
IRFP140N
4.5V TO 100V INPUT REGULATOR
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IRFP3710
Abstract: IRF3710 4.5V TO 100V INPUT REGULATOR
Text: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier
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PD-91490C
IRFP3710
O-247
IRFP3710
IRF3710
4.5V TO 100V INPUT REGULATOR
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IRF540N
Abstract: IRFP140N 4.5v to 100v input regulator
Text: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier
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91343B
IRFP140N
O-247
prec10)
IRF540N
IRFP140N
4.5v to 100v input regulator
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IRFP3710
Abstract: irf 460A TO-247AC Package IRF3710 4.5V TO 100V INPUT REGULATOR
Text: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier
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PD-91490C
IRFP3710
O-247
IRFP3710
irf 460A
TO-247AC Package
IRF3710
4.5V TO 100V INPUT REGULATOR
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Untitled
Abstract: No abstract text available
Text: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier
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PD-91490C
IRFP3710
O-247
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the light activated scr
Abstract: No abstract text available
Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page
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H11C4-H11C6
H11C4,
H11C5
H11C6
H11C4
the light activated scr
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ICE3B0365J
Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)
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SPP21N50C3
SPA21N50C3
SPI21N50C3
SPP16N50C3
SPA16N50C3
SPI16N50C3
SPW21N50C3
SPP12N50C3
SPA12N50C3
SPI12N50C3
ICE3B0365J
ICE3BR4765J
TDA16888
ICE2A765P2
ICE2PCS01G
ICE1PCS02G
ICE2B0565
ICE1PCS02
ICE2pcs02
IPI60R099CP
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F200AC
Abstract: No abstract text available
Text: UT2005-UT2060 UT3005-UT3060 UT4005-UT4060 RECTIFIERS Standard Recovery, 2 Amp to 4 Amp FEATU R ES D E S C R IP T I O N • • • • • High average power and surge capability make these series of devices attractive in many high-rel applications. Continuous R ating:to4A
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UT2005-UT2060
UT3005-UT3060
UT4005-UT4060
10/us
0GG277D
F200AC
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PIV RATING 14 V DIODE
Abstract: UT2005 UT2010 UT2060 UT3005 UT3010 UT3060 UT4005 UT4010
Text: RECTIFIERS UT2005-UT2060 UT3005- UT3060 UT4005-UT4060 Standard Recovery, 2 Amp to 4 Amp FEATU RES DESCRIPTION • • • • • High average power and surge capability make these series of devices attractive in many high-rel applications. Continuous R ating:to 4A
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UT2005-
UT2060
UT3005-
UT3060
UT4005-UT4060
UT2005
UT3005
PIV RATING 14 V DIODE
UT2010
UT3005
UT3010
UT4005
UT4010
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irf18
Abstract: IRLI540N IRL540N ScansUX32 IRL540
Text: PD- 9.1497 International IO R Rectifier IRLI540N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated
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IRLI540N
T0-220
irf18
IRL540N
ScansUX32
IRL540
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TIC116
Abstract: TIC126 circuit tic126 tic 126 SILICON CONTROLLED RECTIFIERS a1283 thyristor tic126 KS 300 A TRIODE thyristors rgk 20/2 thyristor tic116 TIC 2260
Text: TEXAS INSTR -COPTO} ^ 9 6 1 7 2 6 TEXAS INSTR <OPTO> 62C 36 69 8 D SERIES TIC 1 16, TIC126 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS T ~ I S '* 'S ' APRIL 1971 - REVISED OCTOBER 1984 Silicon Controlled Rectifiers 50 V to 600 V 8 A and 12 A D C 80 A and 100 A Surge Current
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96T726
TIC116,
TIC126
T0-220AB
TIC116
TIC126
100ft
20fIS
circuit tic126
tic 126 SILICON CONTROLLED RECTIFIERS
a1283
thyristor tic126
KS 300 A TRIODE thyristors
rgk 20/2
thyristor tic116
TIC 2260
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H11C2 equivalent
Abstract: H1106 B11C2 H11C2-H11C3 HIIC4 t9h7 ST2047
Text: EO PHOTO SCR OPT0 COUPLERS im m c im it s H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 The H11C series consists of a gailium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a duaMn-iine package. 7.62 MAX 0.41
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H11C1
H11C2
H11C3
H11C4
H11C5
H11C6
H11C1,
H11C2,
H11C3)
H11C4,
H11C2 equivalent
H1106
B11C2
H11C2-H11C3
HIIC4
t9h7
ST2047
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