Untitled
Abstract: No abstract text available
Text: Product Catalog > Diodes > Ultra Fast Recovery Rectifiers > Part Number ES2B product family ULTRA FAST RECOVERY RECTIFIERS package type HSMA VRM PRV 100V Ifsm 50A IF(AV) 2.0A @Vf 0.975V @If 2.0A Trr 50nS IR 5.0µA @VR 100V Package Qty Tape : 3K/Reel, 48K/Ctn;
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48K/Ctn;
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Untitled
Abstract: No abstract text available
Text: Product Catalog > Diodes > Ultra Fast Recovery Rectifiers > Part Number ES1B product family ULTRA FAST RECOVERY RECTIFIERS package type HSMA VRM PRV 100V Ifsm 30A IF(AV) 1.0A @Vf 0.975V @If 1.0A Trr 50nS IR 5.0µA @VR 100V Package Qty Tape : 3K/Reel, 48K/Ctn;
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US1B
Abstract: No abstract text available
Text: Product Catalog > Diodes > Ultra Fast Recovery Rectifiers > Part Number US1B product family ULTRA FAST RECOVERY RECTIFIERS package type DO-214AC VRM PRV 100V Ifsm 30A IF(AV) 1.0A @Vf 1.0V @If 1.0A Trr 50nS IR 10µA @VR 100V Package Qty Tape : 5K/Reel, 80K/Ctn;
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DO-214AC
80K/Ctn;
US1B
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100v 20a fast recovery power diode
Abstract: Power MOSFET 50V 20A MOSFET 40A 100V 100v 20a mosfet N_CHANNEL MOSFET 100V MOSFET
Text: LTP40N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application BVDSS=100V , • DC to DC converter
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LTP40N10
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100v 20a fast recovery power diode
Power MOSFET 50V 20A
MOSFET 40A 100V
100v 20a mosfet
N_CHANNEL MOSFET 100V MOSFET
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BYW51100
Abstract: BYW51-100 BYW51 BYW51150 BYW51-150 BYW51200 BYW51-200 FAIRCHILD to220ab package
Text: BYW51-100, BYW51-150, BYW51-200 December 2001 8A, 100V - 200V Ultrafast Dual Diodes Features The BYW51 series devices are low forward voltage drop, ultra-fast-recovery rectifiers tRR < 35ns . They use a planar ion-implanted epitaxial construction. • Ultra Fast Recovery Time (<35ns)
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BYW51-100,
BYW51-150,
BYW51-200
BYW51
BYW51100
BYW51-100
BYW51150
BYW51-150
BYW51200
BYW51-200
FAIRCHILD to220ab package
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Power MOSFET 50V 20A
Abstract: 100V, 200 A MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 40A 100V
Text: LTD35N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. • Pb-free lead planting ; RoHS compliant
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LTD35N10
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Power MOSFET 50V 20A
100V, 200 A MOSFET
N_CHANNEL MOSFET 100V MOSFET
MOSFET 40A 100V
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100V 60A Mosfet
Abstract: mosfet 50v 30a LTP60N10
Text: LTP60N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application • DC to DC converter • For high-frequency switching
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LTP60N10
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100V 60A Mosfet
mosfet 50v 30a
LTP60N10
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Untitled
Abstract: No abstract text available
Text: APT40DS10HJ ISOTOP Schottky Diode Full Bridge Power Module VRRM = 100V IF = 40A @ Tc = 80°C Application • Switch mode power supplies rectifier Induction heating Welding equipment Features + ~ ~ Ultra fast recovery times
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APT40DS10HJ
OT-227)
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Untitled
Abstract: No abstract text available
Text: APT40DS10HJ ISOTOP Schottky Diode Full Bridge Power Module VRRM = 100V IF = 40A @ Tc = 80°C Application • • • Switch mode power supplies rectifier Induction heating Welding equipment Features • • • • • • + ~ ~ Ultra fast recovery times
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APT40DS10HJ
OT-227)
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TVR1B
Abstract: toshiba diode "do-41"
Text: SILICON DIFFUSED TYPE FAST RECOVERY DIODE - O • • • TVR1B/G/J TV APPLICATIONS. FAST RECOVERY U n it in mm Average Forward Current : I f (AV) =0.5A (Ta = 65°C) Repetitive Peak Reverse Voltage : Vr r m = 100V~600V Reverse Recovery Time : tr r =2.0^s
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DO-41
100mA,
100mA
TVR1B
toshiba diode "do-41"
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TVR2B
Abstract: toshiba diode "do-41"
Text: SILICON DIFFUSED TYPE FAST RECOVERY DIODE U nit in mm TV APPLICATIONS. FAST RECOVERY • Average Forward C urrent • Repetitive Peak Reverse Voltage V r r m = 100V~600V • Reverse Recovery Time trr = 5~20,us Ip (AV) = 0.5 A (Ta = 50°C) M A X IM U M RATING
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DO-41
100ns,
TVR2B
toshiba diode "do-41"
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TVR2B,TVR2G,TVR2J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR2B, TVR2G, TVR2J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current : If (AV) =0.5A (Ta = 50°C) Repetitive Peak Reverse Voltage : V t?:r m = 100V~600V
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TVR1 B,TVR1G,TVR1 J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR1B, TVR1G, TVR1J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current : I f ( A V ) =0.5A (Ta = 65°C) Repetitive Peak Reverse Voltage : V t?:rm = 100V~600V
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Untitled
Abstract: No abstract text available
Text: 50 and 75ns ULTRA-FAST RECOVERY AXIAL LEAD RECTIFIER DIODES RUS2 PRV to 1000 V 50 to 75ns recovery RUS3 Small size High temperature stability RUS5 High surge capability Exceptionally low leakage Avalanche characteristics RUS1 50V 100V 200V 400V 600V 800V 1000V
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RUS105
RUS205
RUS305
RUS405
RUS505
RUS110
RUS210
RUS310
RUS410
RUS510
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5ASJ-2 HIGH-SPEED SWITCHING USE FS5ASJ-2 ' 4 V D R IV E ' V . .100V ' rDS ON (MAX) . .0.4Í2 ' Id . .5A ' Integrated Fast Recovery Diode (TYP.) d ss 80ns APPLICATION
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8101A
Abstract: 25CC
Text: RECTIFIER ASSEMBLIES 697, 698 SERIES Single Phase Bridges, 7.5 Amp, Standard and Fast Recovery FEA TU R ES • Miniature High Current Assemblies • Continuous Ratings: to 7.5A • Surge Ratings: to 8DA • PIVS: from 100V to 600V • Recovery Times: to 500ns
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500ns
500ns
8101A
25CC
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VY100X
Abstract: VYA100X
Text: MICRO QUALITY / IBR S E M ICO ND UC TO R , INC. 25 Amp Fast Recovery Time Integrated Rectifiers v y Series \> 200 Nanosecond Reverse Recovery 100V, 200V, and 400V, VHHM Ratings & 150 Amps One Half Cycle Surge Current 2000V Minimum Circuit-To-Case Insulation
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VY100X
VYA100X
VYB100X
VYC100X
VYD100X
VYH100X
VY200X
VYA200X
VYB200X
VYC200X
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VM48XS
Abstract: No abstract text available
Text: mCROSEîlI CORP/ niCRO SbE ]> • bllSTD? 070 ■ M û L 7'2 3 r * 0 S / M IC R O Q U A L IT Y / SEMICONDUCTOR. INC DIB .8 Amp Dual In-Line Bridge, Fast Recovery, Surface Mount VM-XS Series For Surface Mount, Fast Recovery Applications 50V, 100V, 200V, 400V, 600V and 800V VRRM Ratings
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VM88XS
VM108XS
800mA
200nSec
VM48XS
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VM48X
Abstract: VM18X vm68 VM68X VM08X VM28X VM88X s60V VM108X 6 AMP 1000V DIODE lead
Text: SbE J> niCROSEfll CORP/ MICRO • b llS 'îO ? D O O lE ^ l 2TÛ ■ NÜL P 2 3 'O S M ICRO Q U A L IT Y / DIB SEMICONDUCTOR. INC .8 Amp Dual ln~Lin6 Bridge, Fast Recovery VM-X Series For Fast Recovery Applications 50V, 100V, 200V, 400V, 600V and 800V VRRM Ratings
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APT10M25BNFR
Abstract: N mos 100v 100A
Text: A d van ced P o w er Te c h n o l o g y APT10M25BNFR APT10M30BNFR 100V 75A 0.025a 100V 67A 0.030Ü FAST RECOVERY MOSFET FAMILY POWER MOS IV N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol 100 Continuous Drain Current 'd @ Tc
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APT10M25BNFR
APT10M30BNFR
APT10M30BNFR
533nH.
O-247AD
N mos 100v 100A
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fs30umh-2
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30UMH-2 HIGH-SPEED SWITCHING USE FS30UMH-2 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. . 1.3 \ j j 3.6 1.0 ÎL 0.8 2.54 • 2.5V DRIVE • VDSS .100V • Integrated Fast Recovery Diode TYP.
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FS30UMH-2
O-220
fs30umh-2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET F S 1 O A S J -2 HIGH-SPEED SWITCHING USE FS1 OASJ-2 ' 4V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) . 100V . 0.190 .10A 95ns APPLICATION
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30AS-2 HIGH-SPEED SWITCHING USE FS30AS-2 .àÈÊm • 10V DRIVE • rDS ON (MAX) . .100V . 100m£2 • Id . .30A • V d s s . • Integrated Fast Recovery Diode (TYP.)
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FS30AS-2
10Omil
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Untitled
Abstract: No abstract text available
Text: M ICRO Q U A L IT Y / 1 /lD S E M IC O N D U C T O R , INC. .8 Amp Dual In-Line Bridge, Fast Recovery, Surface Mount T \T T l For Surface Mount, Fast Recovery Applications 50V, 100V, 200V, 400V, 600V and 800V V RRM Ratings 25 Amps Peak One Half Cycle Surge Current
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