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    100V H-BRIDGE MOSFET Search Results

    100V H-BRIDGE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    100V H-BRIDGE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ZXMHC10A07T8

    Abstract: ZXMHC10A07T8TC ZXMHC10A07T8TA
    Text: ZXMHC10A07T8 COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel = V BR DSS = 100V : RDS(on) = 0.7 ; ID = 1.4A P-Channel = V(BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that


    Original     		ZXMHC10A07T8 -100V ZXMHC10A07T8 ZXMHC10A07T8TC ZXMHC10A07T8TA PDF

    DRV_B

    Abstract: 100C
    Text: SENSITRON SEMICONDUCTOR SPM4007010 TECHNICAL DATA Datasheet 5030, Preliminary Dual MOSFET BRIDGE, With Gate Driver DESCRIPTION: A 100 VOLT, 7.5 AMP, DUAL MOSFET BRIDGE A high density Dual H-Bridge capabable of driving 7.5A peak at 100V. This small footprint dual bridge contains low Rdson power FETs , FET drivers and precision


    Original     		SPM4007010 DRV_B 100C PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXM HC10A07T8 COM PLEM ENTARY 100V ENHANCEM ENT M ODE M OSFET H-BRIDGE SUM M ARY N-Channel = V BR DSS = 100V : RDS(on) = 0.7 ; ID = 1.4A P-Channel = V (BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that


    Original     		HC10A07T8 -100V ORD50 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 100V RDS(on) ID TA= 25°C 0.70Ω @ VGS= 10V 1.0A 0.90Ω @ VGS= 6.0V 0.9A 1.00Ω @ VGS= -10V -0.9A 1.45Ω @ VGS= -6.0V


    Original     		ZXMHC10A07N8 -100V ZXMHC10A07N8TC PDF

    DEVICE MARKING p1g

    Abstract: 10A07 4.5v to 100v input regulator
    Text: A Product Line of Diodes Incorporated ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 100V RDS(on) ID TA= 25°C 0.70Ω @ VGS= 10V 1.0A 0.90Ω @ VGS= 6.0V 0.9A 1.00Ω @ VGS= -10V -0.9A 1.45Ω @ VGS= -6.0V


    Original     		ZXMHC10A07N8 -100V ZXMHC10A07N8TC DEVICE MARKING p1g 10A07 4.5v to 100v input regulator PDF

    ZXMHC10A07N8

    Abstract: 10A07 4.5v to 100v input regulator
    Text: A Product Line of Diodes Incorporated ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 100V RDS(on) ID TA= 25°C 0.70Ω @ VGS= 10V 1.0A 0.90Ω @ VGS= 6.0V 0.9A 1.00Ω @ VGS= -10V -0.9A 1.45Ω @ VGS= -6.0V


    Original     		ZXMHC10A07N8 -100V ZXMHC10A07N8TC 10A07 522-ZXMHC10A07N8TC ZXMHC10A07N8TC ZXMHC10A07N8 10A07 4.5v to 100v input regulator PDF

    OM9360SF

    Abstract: No abstract text available
    Text: OM9360SF FULL BRIDGE SERVO DRIVER 15A High Efficiency H-Bridge And Driver For Servo Applications FEATURES • • • • • • • 100V Power MOSFETs Output Current Up To 15 Amps TTL Or CMOS Inputs 95% Efficiency Over Temperature Schmitt Trigger Input Up To 100 kHz Operation


    Original     		OM9360SF OM9360SF OM9360 PDF

    complementary MOSFET TO252

    Abstract: Mosfet Sot223 ZXMC10A816N8 717 MOSFET mosfet class-d mosfet DPAK SOIC8 package SOT223 package H-bridge DUAL MOSFET
    Text: Issue Number | 001 New Product Announcement Dual MOSFET saves space and improves performance Description Diodes Incorporated has introduced the ZXMC10A816N8 a 100V complementary dual enhancement mode MOSFET targeted at H-bridge circuits in telecoms DC fan, <100W class D


    Original     		ZXMC10A816N8 ZXMC10A816N8 OT223 OT223 complementary MOSFET TO252 Mosfet Sot223 717 MOSFET mosfet class-d mosfet DPAK SOIC8 package SOT223 package H-bridge DUAL MOSFET PDF

    MSK4230

    Abstract: 10 amp H-bridge Mosfet stepper
    Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. 10 AMP, 70V, H-BRIDGE MOSFET STEPPER MOTOR DRIVE 4707 Dey Road Liverpool, N.Y. 13088 4230 315 701-6751 FEATURES: 70V Maximum Operating Motor Supply Voltage 100V Absolute Maximum Output Stage Rating


    Original     		MIL-PRF-38534 10Amp MSK4230 10 amp H-bridge Mosfet stepper PDF

    MSK4231RH

    Abstract: No abstract text available
    Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY RAD HARD 10 AMP, 70V, H-BRIDGE MOSFET STEPPER MOTOR DRIVE 4231RH FEATURES: Total Dose Hardened to 100 Krads Si (Method 1019.7 Condition A) 70V Maximum Operating Motor Supply Voltage 100V Absolute Maximum Output Stage Rating


    Original     		MIL-PRF-38534 4231RH 10Amp MSK4230) MSK4231 MSK4231RH PDF

    H-bridge Mosfet

    Abstract: SPM4M28-10
    Text: SENSITRON SEMICONDUCTOR SPM4M28-10 DATA SHEET, 685, REV. A Hermetic H-Bridge MOSFET Module With Gate Driver 100V, 28A Description: œThis power module is suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/DC and DC/AC switch mode power supplies. Both the gate drivers


    Original     		SPM4M28-10 SPM4M28-10-1 Pin11 H-bridge Mosfet SPM4M28-10 PDF

    power amplifier 3000w diagram

    Abstract: 3000w power amplifier Circuit 3000w power amplifier circuit diagram 3000w mosfet circuit power amplifier 3000w circuit diagram 3000W power supply SA13 MO-127
    Text: PULSE WIDTH MODULATION AMPLIFIER SA13 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-100V 30A CONTINUOUS TO 60° C CASE 3 PROTECTION CIRCUITS


    Original     		546-APEX RANGE--16-100V TE9493 SA13U power amplifier 3000w diagram 3000w power amplifier Circuit 3000w power amplifier circuit diagram 3000w mosfet circuit power amplifier 3000w circuit diagram 3000W power supply SA13 MO-127 PDF

    3000w mosfet circuit

    Abstract: No abstract text available
    Text: PULSE WIDTH MODULATION AMPLIFIER SA13 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-100V 30A CONTINUOUS TO 60° C CASE 3 PROTECTION CIRCUITS


    Original     		546-APEX RANGE--16-100V TE9493 SA13U 3000w mosfet circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: PULSE WIDTH MODULATION AMPLIFIERS SA13 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-100V 30A CONTINUOUS TO 60° C CASE 3 PROTECTION CIRCUITS


    Original     		546-APEX RANGE--16-100V TE9493 SA13U PDF

    industrial induction heat circuit

    Abstract: 4323H 4707 N Channel MOSFETs 20 Amp 100 volt mosfet MSK4323
    Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. M.S. KENNEDY CORP. 20 AMP, 100 VOLT MOSFET SMART HIGH TEMP 3-PHASE MOTOR DRIVE HYBRID 4707 Dey Road Liverpool, N.Y. 13088 4323 315 701-6751 FEATURES: Designed for High Temp Applications 100V, 20 Amp Capability Low Thermal Resistance - Junction to Case - 3.0°C/W (Each MOSFET)


    Original     		MIL-PRF-38534 25KHz MSK4323 industrial induction heat circuit 4323H 4707 N Channel MOSFETs 20 Amp 100 volt mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-38534 & 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. M.S. KENNEDY CORP. 20 AMP, 100 VOLT MOSFET SMART HIGH TEMP 3-PHASE MOTOR DRIVE HYBRID 4707 Dey Road Liverpool, N.Y. 13088 4323 315 701-6751 FEATURES: Designed for High Temp Applications 100V, 20 Amp Capability


    Original     		MIL-PRF-38534 25KHz MIL-PRF-38534 MSK4323 PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS H S E M I C O N D U C T O R P 2 1 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver October 1995 Description Features • I Drives N-Channel MOSFET Half Bridge The H IP 2100 is a high frequency, 100V Half Bridge N-Channel M O S F E T driver IC, available in 8 lead plastic


    OCR Scan     		00V/2A 116VDC PDF

    Untitled

    Abstract: No abstract text available
    Text: OM9360SF FULL BRIDGE SERVO DRIVER 15A High Efficiency H-Bridge And Driver For Servo Applications FEATURES • • • • • • • 100V Power MOSFETs Output Current Up To 15 Amps TTL Or CMOS Inputs 95% Efficiency Over Temperature Schmitt Trigger Input Up To 100 kHz Operation


    OCR Scan     		OM9360SF OM9360SF OM9360 205Crawfort 0145a -5776FAX D001H01 PDF

    12V 5A rectifier

    Abstract: No abstract text available
    Text: PH26560 Series Preliminary POWER HYBRID 15A DUAL 1/2 H-BRIDGE DRIVERS DESCRIPTION FEATURES • 15A Drive Capability • 4 Drivers with Catch Rectifiers • Fast Switching Speeds ton =35nsec @lc =5A, Vcc =30V toff =300nsec @lc =5A, Vcc =30V • 100V Breakdown on


    OCR Scan     		PH26560 35nsec 300nsec PH26560 12V 5A rectifier PDF

    Untitled

    Abstract: No abstract text available
    Text: P U L S E W ID T H M O D U L A T IO N A M P L IF IE R SA13 M I C R O T E C H N O L O G Y H T T P V / WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE— 16-100V 30A CONTINUOUS TO 60° C CASE


    OCR Scan     		546-APEX 6-100V 45kHz SA13U PDF

    3000w power amplifier circuit diagram

    Abstract: power amplifier 3000w diagram mosfet amp 3000w flyback 3000w
    Text: P U L S E W ID T H M O D U L A T IO N A M P L IF IE R itpèx SA13 H T T P . / / WWW. APEXMI CROTECH. COM 8 0 0 5 4 6 - AP E X (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE— 16- 100V 30A CONTINUOUS TO 60° C CASE


    OCR Scan     		SA13U 3000w power amplifier circuit diagram power amplifier 3000w diagram mosfet amp 3000w flyback 3000w PDF

    Untitled

    Abstract: No abstract text available
    Text: HIP2106 HARRIS S E M I C O N D U C T O R PRELIMINARY 100V/1A Peak, Low Cost, High Frequency Half Bridge Driver October 1997 Description Features Drives N-Channel MOSFET Half Bridge The HIP2106 is a high frequency, 100V Half Bridge N-Channel MOSFET driver IC, available in 8 lead plastic SOIC. The


    OCR Scan     		HIP2106 00V/1A HIP2106 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: HIP2100 Semiconductor October 1998 Data Sheet 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2100 is a high frequency, 100V Half Bridge N-Channel MOSFET driver IC, available in 8 lead plastic SOIC. The low-side and high-side gate drivers are


    OCR Scan     		HIP2100 00V/2A HIP2100 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: fClHARRIS HIP2106 S E M I C O N D U C T O R 100V /1A Peak, Low Cost, High Frequency Half B ridge D river March 1998 Features Description Drives N-Channel MOSFET Half Bridge No Start-Up Problems The HIP2106 is a high frequency, 100V Half Bridge N-Channel MOSFET driver IC, available in 8 lead plastic SOIC. The


    OCR Scan     		HIP2106 HIP2106 PDF