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    100V P-CHANNEL DPAK Search Results

    100V P-CHANNEL DPAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    100V P-CHANNEL DPAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQD8P10TM

    Abstract: No abstract text available
    Text: FQD8P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD8P10TM -100V,

    Untitled

    Abstract: No abstract text available
    Text: FQD8P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD8P10TM -100V,

    FQD12P10TM_F085

    Abstract: FQD12P10TM
    Text: FQD12P10TM_F085 tm 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD12P10TM -100V, FQD12P10TM_F085

    Untitled

    Abstract: No abstract text available
    Text: FQD12P10TM_F085 tm 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD12P10TM -100V,

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD12P10 FQU12P10 -100V,

    FQD12P10

    Abstract: FQU12P10
    Text: TM FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD12P10 FQU12P10 -100V, FQU12P10

    FQD8P10

    Abstract: FQU8P10
    Text: TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD8P10 FQU8P10 -100V, FQU8P10

    FQD5P10

    Abstract: FQU5P10
    Text: TM FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD5P10 FQU5P10 -100V, FQU5P10

    Untitled

    Abstract: No abstract text available
    Text: TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD8P10 FQU8P10 -100V,

    FQD12P10

    Abstract: FQU12P10
    Text: QFET FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD12P10 FQU12P10 -100V, FQU12P10

    FQD8P10

    Abstract: FQU8P10
    Text: TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD8P10 FQU8P10 -100V, FQU8P10

    FQD5P10

    Abstract: FQU5P10
    Text: QFET FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD5P10 FQU5P10 -100V, FQU5P10

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD5P10 FQU5P10 -100V, FQU5P10

    FQD12P10

    Abstract: FQU12P10
    Text: FQD12P10 / FQU12P10 August 2000 QFET TM FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD12P10 FQU12P10 -100V, FQU12P10

    FQD5P10

    Abstract: FQU5P10
    Text: FQD5P10 / FQU5P10 August 2000 QFET TM FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD5P10 FQU5P10 -100V, FQU5P10

    Untitled

    Abstract: No abstract text available
    Text: FQD5P10 / FQU5P10 August 2000 QFET TM FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD5P10 FQU5P10 -100V, FQU5P10 FQU5P10TU O-251

    Untitled

    Abstract: No abstract text available
    Text: FQD12P10 / FQU12P10 August 2000 QFET TM FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD12P10 FQU12P10 -100V, FQD12P10TM FQD12P10TF O-252

    Untitled

    Abstract: No abstract text available
    Text: FQD12P10 / FQU12P10 August 2000 QFET TM FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD12P10 FQU12P10 -100V, FQU12P10 FQU12P10TU O-251

    FQU8P10TU

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 August 2000 QFET TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD8P10 FQU8P10 -100V, FQU8P10 FQU8P10TU O-251 FQU8P10TU

    Untitled

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 August 2000 QFET TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD8P10 FQU8P10 -100V, FQD8P10TM FQD8P10TF O-252

    FQD5P10TM

    Abstract: No abstract text available
    Text: FQD5P10 / FQU5P10 August 2000 QFET TM FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD5P10 FQU5P10 -100V, FQD5P10TM FQD5P10TF O-252

    Untitled

    Abstract: No abstract text available
    Text: KSMD12P10 / KSMU12P10 100V P-Channel MOSFET TO-252 TO-251 Features • • • • • • • -9.4A, -100V, RDS on = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		PDF KSMD12P10 KSMU12P10 O-252 O-251 -100V,

    10A17

    Abstract: J-STD-020D ZXMP 10A17
    Text: A Product Line of Diodes Incorporated ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits • • • • • -100V 0.350Ω -8.7A V BR DSS RDS(ON) ID Description and Applications


    Original     		PDF ZXMP10A17K -100V 10A17 J-STD-020D ZXMP 10A17

    2SJ series

    Abstract: TO252 TO-252 2sk2981 2SK3113 equivalent 2SK2414-Z 2sk2414 2sk2415 2SK1282 2Sj325
    Text: N & P CHANNEL POWER MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 2A TO 30A IN A 20W PACKAGE • LOW AND HIGH VOLTAGE VERSIONS, UP TO 600V UP TO 100V N & P CHANNEL MOSFETS The latest comprehensive data to fully support these parts is readily available.


    Original     		PDF 2SK2981-Z 2SK2982-Z 2SK1282-Z 2SK2415-Z 2SK2414-Z 2SK1284-Z 2SJ324-Z 2SJ325-Z 2SJ326-Z 2SJ327-Z 2SJ series TO252 TO-252 2sk2981 2SK3113 equivalent 2sk2414 2sk2415 2SK1282 2Sj325