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    100VU Search Results

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    100VU Price and Stock

    Ampleon BLF8G24LS-100VU

    RF MOSFET LDMOS 28V CDFM6
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    DigiKey BLF8G24LS-100VU Tray
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    Rochester Electronics BLF8G24LS-100VU 44 1
    • 1 $54.86
    • 10 $54.86
    • 100 $51.57
    • 1000 $46.63
    • 10000 $46.63
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    Rochester Electronics LLC BLF8G24LS-100VU

    RF MOSFET LDMOS 28V CDFM6
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    DigiKey BLF8G24LS-100VU Bulk 6
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    • 100 $57.05
    • 1000 $57.05
    • 10000 $57.05
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    Vishay Intertechnologies 6N137

    High Speed Optocouplers 10Mbd Open Collector Single Channel
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    TTI 6N137 Tube 44,200 50
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    • 100 $0.685
    • 1000 $0.646
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    Vishay Intertechnologies 6N137-X007T

    High Speed Optocouplers 10Mbd High-Speed Single CTR>300%
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    TTI 6N137-X007T Reel 1,000
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    Vishay Intertechnologies VO2630

    High Speed Optocouplers 10Mbd Open Collector Dual Channel
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    TTI VO2630 Tube 2,000
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    100VU Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    B81121 y2 mkp sh

    Abstract: RIFA PME 265 10-25 L w7 Tantalum Capacitor smd RIFA pme 271 M 610 EECEN0F204J2 RIFA 0.022 Micro Farads pme 285 250v PANASONIC ECK SERIES YAGEO CAPACITOR 56 pf 2500v B81121 X2 MKP r46 mkp x2 sh
    Text: 1055 Technical portal and online community for Design Engineers - www.element-14.com Capacitors Page Aluminium Electrolytic - Accessories . . . . . . . . Aluminium Electrolytic - Axial . . . . . . . . . . . . . . . Aluminium Electrolytic - Double Layer . . . . . . .


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    element-14 element14. element14, element14 B81121 y2 mkp sh RIFA PME 265 10-25 L w7 Tantalum Capacitor smd RIFA pme 271 M 610 EECEN0F204J2 RIFA 0.022 Micro Farads pme 285 250v PANASONIC ECK SERIES YAGEO CAPACITOR 56 pf 2500v B81121 X2 MKP r46 mkp x2 sh PDF

    105k 400V

    Abstract: 4334Z ECW-F2H ECWF2H f105k
    Text: Film Capacitors Metallized Polypropylene Type ECW-F Series This series is designed for applications where high frequency and high current are required. Features • • • • Very low loss at high frequency Very small inherent temperature rise Flame retardant Epoxy resin coating


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    200VP 250VDC) F00VDC ECWF4154 105k 400V 4334Z ECW-F2H ECWF2H f105k PDF

    KDS - 5A

    Abstract: KDS -5a ica 700 2SK549
    Text: 2SK549 u 3 V N51 SILICON N-CHANNEL MOS FET MOS FET HIGH SPEED POWER SWITCHING 1. Y — \ \ Gate 2. Y V j y : D rain v y y -y (Flange) 3. y - X : Source (D im ensions in m m ) (JED EC TO-220AB) ABSOLUTE MAXIMUM RATINGS (7 ¿-2 5 ° C ) mf â t t M X Ë t ë


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    2SK549 O-220AB) 2SK549 100JUA, KDS - 5A KDS -5a ica 700 PDF

    Untitled

    Abstract: No abstract text available
    Text: dMINIATURE 'f& p jb s ii ALUMINUM ELECTROLYTIC CAPACITORS ^SERIES li- x pk rrv 85°C CyPG RADE> 85°C Miniaturized m FEATURES • 85=C , 20000#P^ppo Load life : 85‘C 2000 hours. ♦ ft PK 105‘CYfc: PX 105°C Version ♦ & fc ^ SPECIFICATIONS a s ft Items


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    120Hz) 01CV37li3 100/rALTF 10X16 10X20 16X25 PDF

    M5M27C102

    Abstract: M5M27C102P MGF1303B
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1303B LOW NOISE GaAs F E T DESCRIPTION O U TLIN E DRAWING The MGF1303B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band ampli­ fiers. The hermetically sealed metal-ceramic package


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    MGF1303B MGF1303B M5M27C102P RV-15 1048576-BIT 65536-W0RD 16-BIT) T-46-13-25 M5M27C102 PDF