Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    100W 5A IGBT Search Results

    100W 5A IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    100W 5A IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original
    PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    9N160

    Abstract: 100w 5a IGBT
    Text: Advanced Technical Information IXBF 9N140 IC25 IXBF 9N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = = = = 7A 1400/1600 V 4.9V 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C


    Original
    PDF 9N140 9N160 9N140 9N160 IXBF09 100w 5a IGBT

    igbt inverter welder schematic

    Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field


    Original
    PDF

    IRG4IBC10UD

    Abstract: No abstract text available
    Text: PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 600V Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original
    PDF IRG4IBC10UD O-220 140ns IRG4IBC10UD

    IRG4IBC10UD

    Abstract: No abstract text available
    Text: PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 600V Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original
    PDF IRG4IBC10UD O-220 140ns IRG4IBC10UD

    Untitled

    Abstract: No abstract text available
    Text: PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 600V Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original
    PDF IRG4IBC10UD O-220 140ns

    smps 500W

    Abstract: smps 500w half bridge 500w half bridge smps smps 1kW IRFP450 full bridge smps 100w half bridge h bridge irf740 smps igbt HGTG30N60A4 1kW IGBT
    Text: 108872 IGBT LC 0006.1 9/11/00 11:28 AM Page 1 First-Choice Power Switch IGBT Switch Mode Power Supply SMPS IGBTs SMPS IGBT Product Offering New SMPS IGBTs are now the first-choice power switch for high-frequency, off-line power conversion Intersil has developed the 600V IGBT


    Original
    PDF 100kHz 100kHz HGTG12N60A4 O-252AA O-220AB T0-263AB O-268 Breakdown/10 100ns 200ns smps 500W smps 500w half bridge 500w half bridge smps smps 1kW IRFP450 full bridge smps 100w half bridge h bridge irf740 smps igbt HGTG30N60A4 1kW IGBT

    GP07N120

    Abstract: SGP07N120 SGP07N120 equivalent PG-TO-220-3-1 ir igbt 1200V 10A
    Text: SGP07N120 Fast IGBT in NPT-technology C • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


    Original
    PDF SGP07N120 PG-TO-220-3-1 GP07N120 SGP07N120 SGP07N120 equivalent PG-TO-220-3-1 ir igbt 1200V 10A

    gb07n120

    Abstract: PG-TO-263-3-2 SGB07N120 PG-TO263-3-2
    Text: SGB07N120 Fast IGBT in NPT-technology C • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


    Original
    PDF SGB07N120 PG-TO-263-3-2 GB07N120 PG-TO-263-3-2 SGB07N120 PG-TO263-3-2

    G07N120

    Abstract: SGP07N120 Q67040-S4272
    Text: SGP07N120 Fast IGBT in NPT-technology C • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


    Original
    PDF SGP07N120 PG-TO-220-3-1 O-220AB) SGP07N120 G07N120 Q67040-S4272

    Untitled

    Abstract: No abstract text available
    Text: SGB07N120 Fast IGBT in NPT-technology C • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


    Original
    PDF SGB07N120 SGB07N120

    IGP10N60T

    Abstract: IKP10N60T
    Text: TrenchStop Series IGP10N60T q Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Variable Speed Drive for washing machines and air


    Original
    PDF IGP10N60T Sep-04 IGP10N60T IKP10N60T

    G10T60

    Abstract: G10T60 PB-FREE
    Text: IGB10N60T p TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5 s Designed for frequency inverters for washing machines, fans,


    Original
    PDF IGB10N60T G10T60 G10T60 PB-FREE

    g15t60

    Abstract: No abstract text available
    Text: IGP15N60T q TrenchStop Series Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters


    Original
    PDF IGP15N60T G15T60 PG-TO-220-us

    G15N60

    Abstract: G15N60 IGBT PG-TO-263-3-2 PG-TO263-3-2 SGB15N60
    Text: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    PDF SGB15N60 P-TO-263-3-2 G15N60 PG-TO-263-3-2 G15N60 G15N60 IGBT PG-TO-263-3-2 PG-TO263-3-2 SGB15N60

    G15N60

    Abstract: PG-TO-263-3-2 PG-TO263-3-2 SGB15N60 G15N60 IGBT
    Text: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    PDF SGB15N60 PG-TO-263-3-2 G15N60 G15N60 PG-TO-263-3-2 PG-TO263-3-2 SGB15N60 G15N60 IGBT

    g15t60

    Abstract: No abstract text available
    Text: TRENCHSTOP Series IGP15N60T q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters


    Original
    PDF IGP15N60T g15t60

    Untitled

    Abstract: No abstract text available
    Text: IGP15N60T q TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters


    Original
    PDF IGP15N60T

    G15T60

    Abstract: IGP15N60T PG-TO-220-3-1
    Text: IGP15N60T q TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters


    Original
    PDF IGP15N60T G15T60 IGP15N60T PG-TO-220-3-1

    G10T60

    Abstract: IGB10N60T G10T60 PB-FREE PG-TO263-3-2 100w 5a IGBT
    Text: IGB10N60T p TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5 s Designed for frequency inverters for washing machines, fans,


    Original
    PDF IGB10N60T G10T60 IGB10N60T G10T60 PB-FREE PG-TO263-3-2 100w 5a IGBT

    SGP07N120

    Abstract: No abstract text available
    Text: SGP07N120 Fast IGBT in NPT-technology C • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


    Original
    PDF SGP07N120 PG-TO-220-3-1 O-220AB) SGP07N120

    G15N60

    Abstract: PG-TO-247-3-21 SGP15N60
    Text: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    PDF SGP15N60 SGW15N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW15N60 G15N60 PG-TO-247-3-21

    G10T60

    Abstract: No abstract text available
    Text: TRENCHSTOP Series IGP10N60T q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Variable Speed Drive for washing machines and air conditioners


    Original
    PDF IGP10N60T G10T60

    Untitled

    Abstract: No abstract text available
    Text: TRENCHSTOP Series IGB15N60T q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C G Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for frequency inverters for washing machines, fans, pumps and vacuum


    Original
    PDF IGB15N60T