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    100W RF POWER TRANSISTOR 100MHZ Search Results

    100W RF POWER TRANSISTOR 100MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    100W RF POWER TRANSISTOR 100MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F627-8Q1

    Abstract: F627-8-Q1 UF28150J 100W rf power transistor 100MHz 100MHz-500MHz indiana general C4615 UF28150 F627-8
    Text: UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • DMOS structure • Lower capacitance for broadband operation • Common source configuration ABSOLUTE MAXIMUM RATINGS1, 2, 3


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    PDF UF28150J 100MHz-500MHz, F627-8Q1 F627-8-Q1 UF28150J 100W rf power transistor 100MHz 100MHz-500MHz indiana general C4615 UF28150 F627-8

    F-627-8-Q1

    Abstract: F6278-Q1
    Text: UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • DMOS structure • Lower capacitance for broadband operation • Common source configuration ABSOLUTE MAXIMUM RATINGS1, 2, 3


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    PDF UF28150J 100MHz-500MHz, F-627-8-Q1 F6278-Q1

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


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    PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    BFX48

    Abstract: 100W rf power transistor 100MHz
    Text: BFX48 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. APPLICATIONS • It is suitable for a wide range of applications including


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    PDF BFX48 100mA 100MHz -50mA -10mA 80MHz 300ms, BFX48 100W rf power transistor 100MHz

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    Abstract: No abstract text available
    Text: BFX48 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. APPLICATIONS • It is suitable for a wide range of applications including


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    PDF BFX48 100mA 100MHz -50mA -10mA 80MHz 300ms,

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    CLC446

    Abstract: CLC446A8B CLC446AJ CLC446AJE CLC446AJP CLC446ALC CLC446AMC VCVS
    Text: N Comlinear CLC446 400MHz, 50mW Current-Feedback Op Amp General Description Features The Comlinear CLC446 is a very high-speed unity-gain-stable current-feedback op amp that is designed to deliver the highest levels of performance from a mere 50mW quiescent power. It


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    PDF CLC446 400MHz, CLC446 400MHz 900ps CLC446A8B CLC446AJ CLC446AJE CLC446AJP CLC446ALC CLC446AMC VCVS

    ring ferrite inductor design

    Abstract: FERRITE BEAD 100M LPT-4545 DALE PT 30 PULSE TRANSFORMER toroidal ring core choke LPT-3535 LPT4545 BEAD EMC Ferrite inductor EMI/EMC
    Text: Engineering Note Vishay Dale ILB, ILBB Ferrite Beads Electro-Magnetic Interference and Electro-Magnetic Compatibility EMI/EMC David B. Fancher — Inductive Products Division Vishay Dale INTRODUCTION Manufacturers of electrical and electronic equipment regularly


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    PDF 500pF 1000pF 10nsec 30nsec 100nsec 300nsec 318MHz 95MHz 32MHz 950MHz ring ferrite inductor design FERRITE BEAD 100M LPT-4545 DALE PT 30 PULSE TRANSFORMER toroidal ring core choke LPT-3535 LPT4545 BEAD EMC Ferrite inductor EMI/EMC

    12v 1200W AUDIO AMPLIFIER

    Abstract: 100w audio amplifier 12v 1200W DC POWER SUPPLY SCHEMATIC IRF9530 mosfet pin details audio amp 350w high power fet audio amplifier schematic 1200w power amplifier 1200w amplifier 300w audio amp schematic 1200w audio amplifier
    Text: LT1166 Power Output Stage Automatic Bias System U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The LT 1166 is a bias generating system for controlling class AB output current in high powered amplifiers. When connected with external transistors, the circuit becomes a


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    PDF LT1166 LT1166 LT1206 250mA/60MHz LT1210 A/40MHz LT1270A LT1360 50MHz, 12v 1200W AUDIO AMPLIFIER 100w audio amplifier 12v 1200W DC POWER SUPPLY SCHEMATIC IRF9530 mosfet pin details audio amp 350w high power fet audio amplifier schematic 1200w power amplifier 1200w amplifier 300w audio amp schematic 1200w audio amplifier

    Untitled

    Abstract: No abstract text available
    Text: LT1166 Power Output Stage Automatic Bias System U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The LT 1166 is a bias generating system for controlling class AB output current in high powered amplifiers. When connected with external transistors, the circuit becomes a


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    PDF LT1166 LT1166 LT1206 250mA/60MHz LT1210 A/40MHz LT1270A LT1360 50MHz,

    FN2924

    Abstract: 0y22
    Text: HA-5033 Data Sheet October 26, 2004 FN2924.6 250MHz Video Buffer Features The HA-5033 is a unity gain monolithic IC designed for any application requiring a fast, wideband buffer. Featuring a bandwidth of 250MHz and outstanding differential phase/ gain characteristics, this high performance voltage follower is


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    PDF HA-5033 FN2924 250MHz HA-5033 0y22

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


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    PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    Untitled

    Abstract: No abstract text available
    Text: HA-5033 Data Sheet June 2003 FN2924.5 250MHz Video Buffer Features The HA-5033 is a unity gain monolithic IC designed for any application requiring a fast, wideband buffer. Featuring a bandwidth of 250MHz and outstanding differential phase/ gain characteristics, this high performance voltage follower


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    PDF HA-5033 FN2924 250MHz HA-5033

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


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    PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    ltc1680

    Abstract: apple laptop battery pinout R5485 ccfl inverter pinout laptop LT1764-3.3 ltc485 laptop backlight inverter pinout apple ccfl inverter dc 12v lt1073 equivalent ic Improved MF10
    Text: Table of Contents LTC1872 Constant Frequency Current Mode Step-Up DC/DC Controller in SOT-23 . LTC1874 Dual Constant Frequency Current Mode Step-Down DC/DC Controller .


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    PDF LTC1872 OT-23 LTC1874 LTC1876 LTC1922-1 LTC1555L-1 LTC1235 LTC690 LTC691 LTC694 ltc1680 apple laptop battery pinout R5485 ccfl inverter pinout laptop LT1764-3.3 ltc485 laptop backlight inverter pinout apple ccfl inverter dc 12v lt1073 equivalent ic Improved MF10

    AAbZ TRANSISTOR 5 PIN

    Abstract: aabz MAX4200ESA
    Text: 19-1338; Rev 2; 4/99 概要 _ 特長 _ MAX4200~MAX4205は高スルーレート、高出力 電流、低ノイズ、及び優れた容量性負荷駆動能力を 特長とする超高速オープンループバッファです。


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    PDF MAX4200MAX4205 MAX4200/MAX4201/MAX4202 MAX4203/MAX4204/MAX4205 MAX4201/MAX420450 MAX4202/MAX420575 75MAX4200/ MAX4203 780MHz -3dB280MHz AAbZ TRANSISTOR 5 PIN aabz MAX4200ESA

    Untitled

    Abstract: No abstract text available
    Text: High performance aerospace and defense solutions Introduction NXP Semiconductors has been a trusted source and a leading provider of components to the Aerospace and Defense market for over 30 years. NXP’s components are applied in a wide array of Aerospace and Defense systems including Radar, SDR Software Defined Radio , ECM (Electronic Countermeasures) and


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    PDF JESD204A

    6 pin TRANSISTOR SMD CODE CAA

    Abstract: TEA6721 BF991 spice model
    Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、


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    Untitled

    Abstract: No abstract text available
    Text: Engineering Note VISHAY Vishay Dale ▼ ILB, ILBB Ferrite Beads Electro-Magnetic Interference and Electro-Magnetic Compatibility EMI/EMC David B. Fancher — Inductive Products Division Vishay Dale INTRODUCTION Manufacturers of electrical and electronic equipment regularly


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    PDF 318MHz 95MHz 32MHz 30rtsec 300nsec 950MHz 320MHz 07-May-99

    FND-100

    Abstract: IC 14553 Telefunken tk 19 MIXER RMS-2 DCS1800 GSM900 U2893B U2894B U2894B-AFSG3 FND100
    Text: Te m ic U2894B S e m i c o n d u c t o r s Modulation PLL for GSM, DCS and PCS Systems Description The U2894B is a monolithic integrated circuit. It is realized using TEM IC’s advanced silicon bipolar UHF5S technology. The device integrates a mixer, an I/Q modu­


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    PDF u2894b U2894B GSM900, CMD55 20-Jan-98 SS028 FND-100 IC 14553 Telefunken tk 19 MIXER RMS-2 DCS1800 GSM900 U2893B U2894B-AFSG3 FND100

    Untitled

    Abstract: No abstract text available
    Text: Engineering Note VISHAY Vishay Dale ILB, ILBB Ferrite Beads, Electro-Magnetic Interference and Electro-Magnetic Compatibility EMI/EMC Figure 2 IN T R O D U C T IO N Manufacturers of electrical and electronic equipment regularly subm it their products for EM I/EMC testing to ensure


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    PDF radiaIMC-1812-91, IMC-1210-91, ISC-181291, ISC-1210-91 28-Feb-02

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


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    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    transistor SRF 2356

    Abstract: No abstract text available
    Text: Engineering Note ILB, ILBB, IMC, ISC, IFC VISHAY Vishay Dale Circuit Simulation of Surface Mount Inductors and Impedance Beads Tim Schafer - Inductive Products Division Vishay Dale With the advent of higher component densities, smaller components, and reduced design to


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    PDF IMC-1812-91, IMC-1210-91, ISC-1812-91 ISC-1210-91 29-Apr-99 transistor SRF 2356